MBT2222ADW

MBT2222ADW
Dual General Purpose Transistors
NPN+NPN Silicon
2
3
1
6 5
1
4
5
6
2
4
3
SOT-363(SC-88)
NPN+NPN
VCEO
(1)
Value
150
833
TJ ,Tstg
-55 to+150
MBT2222ADW=XX
u
1. Device mounted on FR4 glass epoxy printed circuit board using
the minimum recommended footprint
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MBT2222ADW
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
-
hFE
35
50
75
100
Unit
ON CHARACTERISTICS
DC Current Gain
(IC=0.1 mAdc, VCE=10 Vdc)
(IC=1.0 mAdc, VCE=10 Vdc)
(IC=10 mAdc, VCE=10 Vdc, TA =-55 C)
(IC=150mAdc, VCE=10 Vdc) (2)
(I C =150mAdc, VCE=1.0Vdc) (2)
(IC=500 mAdc, VCE=10 Vdc) (2)
Collector-Emitter Saturation Voltage
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
50
40
300
-
(2)
Voltage (2)
Base-Emitter Saturation
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
-
Vdc
VCE(sat)
-
1.0
VBE(sat)
0.6
-
1.2
2.0
fT
300
-
MHz
0.3
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (3)
(IC=20 mAdc, VCE=20 Vdc, f=100MHz)
Output Capacitance
(VCB=10 Vdc, IE=0, f=1.0MHz)
Cobo
-
8.0
pF
Input Capacitance
(VEB=0.5 Vdc, IC=0, f=1.0MHz)
Cibo
-
25
pF
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
hie
2.0
0.25
0.8
1.25
kΩ
Voltage Feeback Radio
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
hre
-
8.0
4.0
x 10-4
hfe
50
75
300
375
-
hoe
5.0
25
35
200
µmhos
rb, Cc
-
150
ps
NF
-
4.0
dB
Input Impedance
S mall-S ignal C urrent G ain
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
(I C =10 mAdc, V C E =10V dc, f=1.0 kHz)
Output Admittance
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10Vdc, f=-1.0kHz)
Collector Base Time Constant
(IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz)
Noise Figure
(IC=100 µAdc, VCE=10Vdc, RS=1.0k Ω, f=1.0kHz)
WEITRON
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MBT2222ADW
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Symbol
Min
Max
(VCC=30 Vdc, VBE=(off)=-0.5Vdc,
IC=150 mAdc, IB1=15 mAdc)
td
-
10
tr
-
25
(VCC=30 Vdc, IC=150 mAdc,
IB1=IB2=15 mAdc)
ts
-
225
tf
-
60
Characteristics
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
2.Pulse Test:Pulse Width<
= 2.0%.
= 300 µs, Duty Cycle<
3.fT is defined as the frequency at which Ihfe extrapolates to unity.
S WIT C HING T IME E QUIV
A L E NT T E S T C IR C UIT S
+ 30 V
+ 30 V
+16 V
0
-2V
1.0 to 100 µs,
DUTY CYCLE ∼
∼ 2.0%
200
+16 V
1.0 to 100 µs,
DUTY CYCLE ∼
∼ 2.0%
0
1 kΩ
< 2 ns
CS * < 10 pF
200
1k
-14 V
< 20 ns
CS * < 10 pF
1N914
-4V
S cope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
F igure 1. Turn-On Time
F igure 2. Turn-Off Time
hFE , DC CURRENT GAIN
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
F igure 3. DC C urrent G ain
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50 70 100
200 300
500 700 1.0
k
VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS)
MBT2222ADW
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (m A)
2.0
3.0
5.0
10
20
30
50
F igure 4. C ollec tor S aturation R egion
200
500
IC/IB = 10
TJ = 25 C
tr @ V CC = 30 V
td @ V EB(off) = 2.0 V
td @ V EB(off) = 0
30
20
10
7.0
5.0
200
t 's = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
F igure 5. Turn-On Time
500
10
R S = OPTIMUM
R S = SOURCE
R S = RESIST ANCE
IC = 1.0 mA, RS = 150Ω
500 µA, RS = 200Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
4.0
2.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
6.0
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
F igure 6. Turn-Off Time
10
8.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25 C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
IC = 50 µA
100 µA
500 µA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
f, FREQUENCY (kHz)
F igure 7. F requenc y E ffec ts
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50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
R S , SOURCE RESIST ANCE (OHMS)
F igure 8. S ourc e R es is tanc e E ffec ts
30
CAPACITANCE (pF)
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
MBT2222ADW
500
VCE = 20 V
TJ = 25 C
300
200
100
70
50
1.0
F igure 9. C apac itanc es
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
F igure 10. C urrent±G ain B andwidth P roduc t
1.0
+0.5
TJ = 25 C
0
VBE(sat) @ I C/IB = 10
0.6
1.0 V
VBE(on) @ V CE = 10 V
0.4
0.2
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
0.8
R VC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0
R VB for VBE
VCE(sat) @ I C/IB = 10
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200 500 1.0 k
IC, COLLECTOR CURRENT (mA)
F igure 11. " On" Voltages
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- 2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
F igure 12. Temperature C oeffic ients
500
MBT2222ADW
SOT-363 Package Outline Dimensions
Unit:mm
A
6
5
SOT-363
4
B C
1
2
D
3
E
H
K
J
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L
M
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25