MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-base Voltage VCBO 30 V Emitter-base Voltage VEBO 10 V Collector Current IC 500 mA Total Power Dissipation(TA =25˚C) PD 0.625 W - 55~+150 ˚C Operating Junction and Storage Temperature Range TJ,Tstg Electrical Characteristics (TA=25C Unless otherwise noted) Characteristic Symbol Min Max Unit Collector-base breakdown voltage V( BR) CB O 30 - V Collector-emitter breakdown voltage V( BR) CE O 30 - V Emitter-base breakdown voltage V( BR) EB O 10 - V IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 Collector cut-off current I CB O 0.1 µA Emitter cut-off current I EBO 0.1 µA VCB=30V,IE=0 VEB=10V,IC=0 DC curent gain1 VCE=5V,IC=10mA VCE=5V,IC=100mA MPSA13 MPSA14 H FE (1) 5000 10000 - - MPSA13 MPSA14 H FE (2) 10000 20000 - - Collector-emitter saturation voltage1 V CE (sat) 1.5 V Base-emitter voltage1 V BE( on) 2.0 V - MHz IC=100mA,IB=0.1mA VCE=5V,IC=10mA Transition frequency fT VCE=5V,IC=10mA,F=100Mhz 125 Note: 1.Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. WEITRON http://www.weitron.com.tw 1/4 17-Jun-05 MPSA13/MPSA14 WE IT R ON 4.0 |hfe|, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25 C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR , REVERSE VOL TAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 F igure 1. C apac itanc e VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN TJ = 125 C 25 C 30 k 20 k 10 k 7.0 k 5.0 k - 55 C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 R θV, TEMPERATURE COEFFICIENTS (mV/5C) TJ = 25 C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ I C/IB = 1000 1.2 VBE(on) @ V CE = 5.0 V 1.0 VCE(sat) @ I C/IB = 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 F igure 5. " On" Voltages WEITRON http://www.weitron.com.tw 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25 C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT ( µA) F igure 4. C ollec tor S aturation R egion 1.6 0.6 5.0 7.0 2.0 3.0 F igure 3. DC C urrent G ain 0.8 1.0 F igure 2. High F requenc y C urrent G ain 200 k 100 k 70 k 50 k VCE = 5.0 V f = 100 MHz TJ = 25 C - 1.0 - 2.0 *APPLIES FOR IC/IB 3 hFE /3.0 25 C TO 125 C *R VC FOR V CE(sat) - 55 C TO 25 C - 3.0 25 C TO 125 C - 4.0 VB FOR V BE - 5.0 - 55 C TO 25 C - 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 F igure 6. Temperature C oeffic ients 2/4 17-Jun-05 r(t), TRANSIENTTHERMAL RESIST ANCE (NORMALIZED) MPSA13/MPSA14 1.0 0.7 0.5 WE IT R ON D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t)ωR θJC T J(pk) - T C = P(pk) ZθJC(t) ZθJA(t) = r(t)ωR θJA T J(pk) - T A = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k F igure 7. T hermal R es pons e IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms TA = 25 C tP TC = 25 C 100 µs PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1/f 40 t1 tP PEAK PULSE POWER = PP DUTY CYCLE t1 f F igure 8. A c tive R egion S afe Operating A rea Des ign Note: Us e of Trans ient T hermal R es is tanc e Data WEITRON http://www.weitron.com.tw 3/4 17-Jun-05 MPSA13/MPSA14 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 WEITRON http://www.weitron.com.tw 4/4 17-Jun-05