2N4403 General Purpose Transistors PNP Silicon TO-92 COLLECTOR 3 2 BASE 1. EMITTER 2. BASE 3. COLLECTOR 1 EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol VCEO VCBO VEBO IC 2N4403 -40 -40 -5.0 -600 Unit Vdc Vdc Vdc mAdc Total Device Dissipation TA=25 C PD 625 mW Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current DEVICE MARKING 2N4403=2N4403 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCB= -35 Vdc, IE=0) ICBO - -0.1 uAdc Collect Cutoff Current(VCE = -35 Vdc, I B =0) I CEO - -0.1 uAdc 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% WEITRON http://www.weitron.com.tw 2N4403 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC= -0.1 mAdc, VCE=-1.0 Vdc) (IC= -1.0 mAdc, VCE=-1.0 Vdc) (IC= -10 mAdc, VCE=-1.0 Vdc) (IC= -150 mAdc, VCE=-2.0 Vdc) (1) (IC= -500 mAdc, VCE=-2.0 Vdc) (1) hFE - 30 60 100 100 20 300 - - -0.4 -0.75 -0.75 - -0.95 -1.3 fT 200 - MHz Collector-Base Capacitance (IE= 0, VCB=-10 Vdc, f=1.0MHz) Ccb - 8.5 pF Emitter-Base Capacitance (IC= 0, VEB=-0.5 Vdc, f=1.0MHz) Ceb - 30 pF Input Impedance (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) hie 1.5k 15k ohms Voltage Feedback Ratio (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) hre 0.1 8.0 I I 10 -4 Small-Signal Current Gain (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) hfe 60 500 - Output Admittance (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) hoe 1.0 100 umhos (VCC= -30 Vdc, VBE= +2.0 Adc, IC= -150 mAdc,IB1=-15mAdc) td - 15 tr - 20 (VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc,I B2=-15mAdc) ts - 225 tf - 30 Collector-Emitter Saturation Voltage (1) (IC= -150 mAdc, IB= -15 mAdc) (IC=- 500 mAdc, IB= -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (1) (IC= -150 mAdc, IB= -15 mAdc) (IC= -500 mAdc, IB=- 50 mAdc) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC= -20 mAdc, VCE=-10 Vdc, f=100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test : Pulse Width <-300µs, Duty Cycle <- 2% WEITRON http://www.weitron.com.tw ns 2N4403 SWITCHING TIME EQUIVALENT TEST CIRCUIT - 30 V - 30 V 200 Ω < 2 ns +2 V +14 V 0 0 1.0 kΩ - 16 V CS * < 10 pF 10 to 100 µs, DUTY CYCLE = 2% 1.0 kΩ -16 V + 4.0 V S cope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope FIG 2. Turn-Off Time 30 Ceb VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 10 7.0 5.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 0.1 20 30 10 20 30 50 70 100 200 IC , COLLECTOR CURRENT (mA) FIG 3. Capacitances 500 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 tr @ V CC = 30 V tr @ V CC = 10 V td @ V BE(off) = 2 V td @ V BE(off) = 0 30 20 tr , RISE TIME (ns) t, TIME (ns) 300 FIG 4. Charge Data 100 30 20 10 10 7.0 7.0 5.0 10 CS * < 10 pF 1.0 to 100 µs, DUTY CYCLE = 2% FIG 1. Turn-On Time 20 200 Ω < 20 ns 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) FIG5. Turn-On Time WEITRON http://www.weitron.com.tw 300 500 5.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) FIG 6. Rise Time 300 500 2N4403 200 10 8 NF, NOISE FIGURE (dB) ts4 , STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts4= ts - 1/8 tf 10 20 30 4 2 30 20 IC = 1.0 mA, RS= 430Ω IC = 500µA, RS = 560Ω IC = 50 µA, RS = 2.7 kΩ IC = 100µA, RS = 1.6 kΩ 6 50 70 100 200 300 R S = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f , FREQUENCY (kHz) 500 IC , COLLECTOR CURRENT (mA) 50 100 FIG. 8 Frequency Effects FIG. 7 Storage Time 10 1000 f = 1 kHz 700 8 500 6 hfe , CURRENT GAIN NF, NOISE FIGURE (dB) 10 20 IC = 50 µA 100 µA 500 µA 1.0 mA 4 2 300 200 2N4403 UNIT 1 2N4403 UNIT 2 100 70 50 0 50 100 200 500 1 k 2 k 5 k 10 k 20 k R S , SOURCE RESIST ANCE (OHMS) 30 0.1 50 k 0.2 0.3 FIG. 9 Source Resistance Effects 2N4403 UNIT 1 2N4403 UNIT 2 50 k 20 k 10 k 5k 2k 1k 500 200 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC , COLLECTOR CURRENT (mAdc) FIG. 11 Input Impedance WEITRON http://www.weitron.com.tw 5.0 7.0 10 2.0 3.0 5.0 7.0 10 FIG.10 Current Gain hre , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (OHMS) 100 k 0.5 0.7 1.0 IC , COLLECTOR CURRENT (mAdc) 20 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC , COLLECTOR CURRENT (mAdc) FIG. 12 Voltage Feedback Ratio 2N4403 hoe , OUTPUT ADMITTANCE ( mhos) 500 100 50 20 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) FIG. 13 Output Admittance hFE , NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125 C 25 C 1.0 - 55 C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC , COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) FIG. 14 DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 FIG. 15 Collector Saturation Region WEITRON http://www.weitron.com.tw 5.0 7.0 10 20 30 50 2N4403 0.5 TJ = 25 C 0.8 VBE(sat) @ I C/IB = 10 0.6 VBE(sat) @ V CE = 10 V 0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 1.0 0.4 0.2 0.5 1.0 1.5 2.0 VCE(sat) @ IC /IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) FIG. 16 "On" Voltages WEITRON http://www.weitron.com.tw 500 VC for VCE(sat) 2.5 0.1 0.2 VS for VBE 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) FIG. 17 Temperature Coefficients 500 2N4403 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50