WEITRON PZT159

PZT159
PNP Silicon Planar High Current Transistor
COLLECTOR
2, 4
P b Lead(Pb)-Free
SOT-223
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
BASE
1
4
1
2
3
3
EM ITTER
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Rating
Symbol
Value
Unit
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-60
V
Collector to Base Voltage
VEBO
-6
V
Collector Current
IC(DC)
-5
A
Collector Current
IC(Pulse)
-15
A
Total Device Disspation TA=25°C
PD
3
W
Junction Temperature
Tj
+150
˚C
Storage, Temperature
Tstg
-55 to +150
˚C
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
Device Marking
PZT159 =159
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage(1)
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
IE=-100µA, IC=0
Collector Cut-Off Current
VCB=-80V, IE=0
Collector Cut-Off Current
VCES =-60V
Emitter-Cut-Off Current
VEB=-6V, IC=0
WEITRON
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Symbol
Min
Max
Max
Unit
BVCBO
-100
-
-
V
BVCEO
-60
-
-
V
BVEBO
-6
-
-
V
ICBO
-
-
-50
nA
ICES
-
-
-50
nA
IEBO
-
-
-10
nA
1/4
11-Jul-07
PZT159
ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
Collector-Emitter Saturation Voltage
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
Base-Emitter Saturation Voltage
IC=-5A, IB=-500mA
Base-Emitter On Voltage
VCE=-1V, IC=-5A
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-10V, IC=-100mA, f=50MHz
Output Capacitance
VCB=-10V, IE=0, f=1MHz
Symbol
Min
Typ
Max
Unit
hFE1
hFE2
hFE3
hFE4
100
100
75
10
200
200
90
25
300
-
-
VCE(sat)
-
-20
-85
-155
-370
-50
-140
-210
-460
mV
VBE(sat)
-
-1.08
-1.24
V
VBE(on)
-
-0.935
-1.07
V
fT
-
120
-
MHz
Cob
-
74
-
pF
ton
-
82
-
toff
-
350
-
SWITCHING TIMES
Switching Times
VCC=-10V,IC =-2A, IB1=IB2=-200mA
ns
Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%.
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2/4
11-Jul-07
PZT159
1.8
VCE=-1V
+100˚C
1.4
1.2
+25˚C
1.0
200
0.8
0.6
100
-55˚C
0.4
1.4
1.2
1.0
0.8
0.01
0.1
1
1.2
VBE - (Volts)
VCE(sat) (V)
1.2
-55˚C
+25˚C
0.6
+175˚C
0.4
-55˚C
+25˚C
1.0
+100˚C
0.8
0.6
0.4
0.2
+175˚C
0.2
0.0
0.001
0.01
0.1
1
0.0
0.001
10 20
Collector Current(A)
0.01
0.1
1
Fig.4 Saturation Voltage - Collector Current
100
1.4
Collector Current (A)
VBE(on) - (Volts)
TA=25˚C
VCE=-1V
1.6
-55˚C
1.2
+25˚C
1.0
+100˚C
0.8
0.6
0.4
10
100ms
10ms
1s
1.0ms
D.C.
0.1ms
1
+175˚C
0.2
0.0
0.001
10 20
Collector Current(A)
Fig.3 Saturation Voltage - Collector Current
1.8
10 20
IC / IB=10
1.6
1.4
0.8
1
1.8
1.4
1.0
0.1
Fig.2 Saturation Voltage - Collector Current
IC / IB=10
1.6
0.01
Collector Current(A)
Fig.1 Current Gain - Collector Current
1.8
IC/IB=10
0.2
0.0
0.001
10 20
Collector Current(A)
IC/IB=50
0.6
0.4
0.2
0.0
0.001
TA=25˚C
1.6
300
VCE(sat) V
1.6
hFE-Typical Gain
hFE-Normalised Gain
1.8
0.01
0.1
1
0.1
0.1
10 20
Collector Current(A)
WEITRON
10
100
Collector Emitter Current(A)
Fig.5 On Voltage - Collector Current
http://www.weitron.com.tw
1
Fig.6 Safe Operating Area
3/4
11-Jul-07
PZT159
SOT-223 Outline Dimensions
unit:mm
A
F
DIM
4
S
B
1
2
3
D
L
G
J
C
H
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M
K
4/4
A
B
C
D
F
G
H
J
K
L
M
S
MILLIMETERS
MIN
MAX
6.30
3.30
1.50
0.60
2.90
2.20
0.020
0.24
1.50
0.85
0
6.70
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
7.30
11-Jul-07