PZT159 PNP Silicon Planar High Current Transistor COLLECTOR 2, 4 P b Lead(Pb)-Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -100 V Collector to Emitter Voltage VCEO -60 V Collector to Base Voltage VEBO -6 V Collector Current IC(DC) -5 A Collector Current IC(Pulse) -15 A Total Device Disspation TA=25°C PD 3 W Junction Temperature Tj +150 ˚C Storage, Temperature Tstg -55 to +150 ˚C *Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min). Device Marking PZT159 =159 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage(1) IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-100µA, IC=0 Collector Cut-Off Current VCB=-80V, IE=0 Collector Cut-Off Current VCES =-60V Emitter-Cut-Off Current VEB=-6V, IC=0 WEITRON http://www.weitron.com.tw Symbol Min Max Max Unit BVCBO -100 - - V BVCEO -60 - - V BVEBO -6 - - V ICBO - - -50 nA ICES - - -50 nA IEBO - - -10 nA 1/4 11-Jul-07 PZT159 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, IC=-10mA VCE=-1V, IC=-2A VCE=-1V, IC=-5A VCE=-1V, IC=-10A Collector-Emitter Saturation Voltage IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Base-Emitter Saturation Voltage IC=-5A, IB=-500mA Base-Emitter On Voltage VCE=-1V, IC=-5A DYNAMIC CHARACTERISTICS Transition Frequency VCE=-10V, IC=-100mA, f=50MHz Output Capacitance VCB=-10V, IE=0, f=1MHz Symbol Min Typ Max Unit hFE1 hFE2 hFE3 hFE4 100 100 75 10 200 200 90 25 300 - - VCE(sat) - -20 -85 -155 -370 -50 -140 -210 -460 mV VBE(sat) - -1.08 -1.24 V VBE(on) - -0.935 -1.07 V fT - 120 - MHz Cob - 74 - pF ton - 82 - toff - 350 - SWITCHING TIMES Switching Times VCC=-10V,IC =-2A, IB1=IB2=-200mA ns Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%. WEITRON http://www.weitron.com.tw 2/4 11-Jul-07 PZT159 1.8 VCE=-1V +100˚C 1.4 1.2 +25˚C 1.0 200 0.8 0.6 100 -55˚C 0.4 1.4 1.2 1.0 0.8 0.01 0.1 1 1.2 VBE - (Volts) VCE(sat) (V) 1.2 -55˚C +25˚C 0.6 +175˚C 0.4 -55˚C +25˚C 1.0 +100˚C 0.8 0.6 0.4 0.2 +175˚C 0.2 0.0 0.001 0.01 0.1 1 0.0 0.001 10 20 Collector Current(A) 0.01 0.1 1 Fig.4 Saturation Voltage - Collector Current 100 1.4 Collector Current (A) VBE(on) - (Volts) TA=25˚C VCE=-1V 1.6 -55˚C 1.2 +25˚C 1.0 +100˚C 0.8 0.6 0.4 10 100ms 10ms 1s 1.0ms D.C. 0.1ms 1 +175˚C 0.2 0.0 0.001 10 20 Collector Current(A) Fig.3 Saturation Voltage - Collector Current 1.8 10 20 IC / IB=10 1.6 1.4 0.8 1 1.8 1.4 1.0 0.1 Fig.2 Saturation Voltage - Collector Current IC / IB=10 1.6 0.01 Collector Current(A) Fig.1 Current Gain - Collector Current 1.8 IC/IB=10 0.2 0.0 0.001 10 20 Collector Current(A) IC/IB=50 0.6 0.4 0.2 0.0 0.001 TA=25˚C 1.6 300 VCE(sat) V 1.6 hFE-Typical Gain hFE-Normalised Gain 1.8 0.01 0.1 1 0.1 0.1 10 20 Collector Current(A) WEITRON 10 100 Collector Emitter Current(A) Fig.5 On Voltage - Collector Current http://www.weitron.com.tw 1 Fig.6 Safe Operating Area 3/4 11-Jul-07 PZT159 SOT-223 Outline Dimensions unit:mm A F DIM 4 S B 1 2 3 D L G J C H WEITRON http://www.weitron.com.tw M K 4/4 A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 11-Jul-07