2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 5.0 Adc(DC) I CP 10 Adc (Pulse) (1) PC 0.5 W Tj , Tstg 150, -55 to +150 %C Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature Device Marking 2SD2098Q=AHQ, 2SD2098R=AHR ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 20 - Vdc Collector-Base Breakdown Voltage (IC= 50 µAdc, IE=0) V(BR)CBO 50 - Vdc Emitter-Base Breakdown Voltage (IE= 50 µAdc, IC=0) V(BR)EBO 6.0 - Vdc Collector Cutoff Current (VCB= 40 Vdc, IE=0) ICBO - 0.5 uAdc Emitter Cutoff Current (VEB=5.0 Vdc, IC =0) IEBO - 0.5 uAdc Note: 1. Single pulse pw=10ms WE ITR O N http://www.weitron.com.tw 2SD2098 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ hFE 120 - 390 - VCE(sat) - 0.3 1.0 Vdc fT - 150 - MHz Cob - 35 - PF Symbol Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.5 Adc, VCE=2.0 Vdc) Collector-Emitter Saturation Voltage (IC=100 mAdc, IB=4 Adc) Transition Frequency (IE=-50 mAdc, VCE=6.0 Vdc,f=100 MHz) Output Capacitance (IE=0 Adc, VCE=20 Vdc,f=1 MHz) CLASSIFICATION OF hFE Item Q R Range 120-270 180-390 WEITRON http://www.weitron.com.tw 2SD2098 Ta =100 C 25 C -25 C 0 0.2 0.4 0.6 0.8 1.0 1.2 hFE ,DC CURRENT GAIN 50mA 45mA Ta =25 C 30mA 25mA 20mA 15mA 4 10mA 40mA 3 35mA 2 5mA 1 IB=0mA 0 0 1.4 0.4 0.8 1.2 1.6 2.0 VBE ,BASE TO EMITTER VOLTAGE (V) VCE ,COLLECTOR TO EMITTER VOLTAGE(V) FIG.1 Grounded Emitter Propagation Characteristics FIG.2 Grounded Emitter Output Characteristics 5000 Ta =25 C 2000 1000 VCE =5V 500 200 100 50 1V 5 10 FIG.3 DC Current Gain vs. Collector Current Ta =25 C VCE =6V 200 100 50 20 10 5 2 1 1m 2m 5m 10m 20m 50m 0.1 0.2 0.5 1 IE,EMITTER CURRENT(A) FIG.5 Gain Bandwidth Product vs. Emitter Current WEITRON http://www.weitron.com.tw Ta =25 C 1 0.5 0.1 20 10 5 1m 2m 5m 0.010.020.050.1 0.2 0.5 1 2 1000 500 2 0.2 2V IC ,COLLECTOR CURRENT(A) f T ,TRANSITION FREQUENCY(MHz) 5 IC , COLLECTOR CURRENT(A) VCE =2V Cob ,COLLECTOR OUTPUT CAPACITANCE(PF) VCE(sat) ,COLLECTOR SATURATION VOLTAGE(V) Cib ,EMITTER INPUT CAPACITANCE(PF) IC , COLLECTOR CURRENT(A) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0.05 IC/IB =50 0.02 40 30 10 0.01 2m 5m0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 IC ,COLLECTOR CURRENT(A) FIG.4 Collector-Emitter Saturation Voltage vs. Collector Current 1000 Ta =25 C f=1MHz IC =0A IE =0A 500 200 Cib 100 50 Cob 20 10 0.1 0.2 0.5 1 2 5 10 20 50 VCB ,COLLECTOR TO BASE VOLTAGE(V) VEB ,EMITTER TO BASE VOLTAGE(V) FIG.6 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage =1 ms 00 =1 s Pw m =1 Pw 0ms Pw 00 m s DC 2 1 500m Ic max(Pulse) Ta =100 C Single pulse Recommended land pattern =1 50 20 10 5 Pw IC , COLLECTOR CURRENT(A) 2SD2098 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 VCE ,COLLECTOR TO EMITTER VOLTAGE(V) FIG.7 Safe Operating Area WEITRON http://www.weitron.com.tw 2SD2098 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K L WEITRON http://www.weitron.com.tw D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900