S9015 - Weitron

S9015
PNP General Purpose Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
-45
-50
-5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation TA=25 C
PD
0.4
W
Junction Temperature
Tj
150
C
Storage, Temperature
Tstg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0)
V(BR)CEO
-45
-
Vdc
Collector-Base Breakdown Voltage (IC= -100uAdc, IE=0)
V(BR)CBO
-50
-
Vdc
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
V(BR)EBO
-5.0
-
Vdc
Collector Cutoff Current (VCB= -50 Vdc, IE=0)
ICBO
-
-0.05
uAdc
Emitter Cutoff Current (VEB= -5.0Vd c, IC =0)
IEBO
-
-0.05
uAdc
WEITRON
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S9015
WEITRON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
HFE
60
1000
-
VCE(sat)
-
-0.3
Vdc
VBE(sat)
-
-1
Vdc
fT
150
-
MHz
On Characteristics
DC Current Gain
(IC= -1mAdc, VCE=-5Vdc)
Collector-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
Base-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10mAdc)
Transition Frequency
(IC= -10 mAdc, VCE= -5 Vdc, f=30MHz)
CLASSIFICATION OF hFE
Rank
A
B
C
D
Range
60-150
100-300
200-600
400-1000
WEITRON
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S9015
FIG.1
FIG.3
FIG.5
WEITRON
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WEITRON
FIG.2
FIG.4
FIG.6
S9015
unit:mm
TO-92 Outline Dimensions
E
H
TO-92
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
D
A
B
G
WEITRON
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Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50