WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER WTM772 2 3 WTM882 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC) PD Total Device Dissipation TA =25 C PNP/WTM772 NPN/WTM882 30 -30 -40 40 -5.0 6.0 3.0 -3.0 Unit Vdc Vdc Vdc Adc 0.5 W Thermal Resistance, Junction to Ambient RθJA 250 °C/W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C Device Marking WTM772=B772 , WTM882=D882 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0) V(BR)CEO -30/30 - Vdc Collector-Base Breakdown Voltage (IC= -100/100 uAdc, IE=0) V(BR)CBO -40/40 - Vdc Emitter-Base Breakdown Voltage (IE= -100/100 uAdc, IC=0) V(BR)EBO -5.0/6.0 - Vdc Collector Cutoff Current (VCE= -30/30 Vdc, I B =0) ICE0 - -10/10 uAdc Collector Cutoff Current (VCB= -40/40 Vdc, IE=0) ICBO - -1.0/1.0 uAdc Emitter Cutoff Current (VEB= -6.0/6.0Vdc, IC=0) IEBO - -1.0/1.0 uAdc WEITRON http://www.weitron.com.tw 1/5 14-Aug-2012 WTM772 WTM882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min TYP Max Unit DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) hFE (1) 60/60 - 400/400 - DC Current Gain (IC= -/100 mAdc, VCE= -/2.0 Vdc) hFE (2) -/32 - - - Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2Adc) VCE(sat) - - -0.5/0.5 Vdc Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2Adc) VBE(sat) - - -1.5/1.5 Vdc fT - 80/50 Characteristics ON CHARACTERISTICS Current-Gain-Bandwidth Product (IC= -0.1/0.1 Adc, V CE=-5.0/5.0 Vdc, f=10MHz) MHz - Classification of hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 WEITRON http://www.weitron.com.tw 2/5 14-Aug-2012 WTM772 WTM882 Static Characteristic 2.00 10mA 9mA IC DC CURRENT GAIN IC 6mA 5mA 1.25 Ta=100℃ hFE 7mA 1.50 COLLECTOR CURRENT —— COMMON EMITTER Ta=25 ℃ 8mA (A) 1.75 hFE 1000 4mA 1.00 3mA 0.75 Ta=25℃ 100 2mA 0.50 0.25 COMMON EMITTER VCE= 2V IB=1mA 0.00 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 8 1 10 100 COLLECTOR CURRENT IC VBEsat —— 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 7 VCE (V) 100 Ta=100 ℃ 10 Ta=25℃ 1000 IC 3000 (mA) IC 1000 Ta=25℃ Ta=100 ℃ β=10 β=10 1 100 1 10 100 COLLECTOR CURREMT WEITRON http://www.weitron.com.tw 1000 IC 3000 1 10 100 COLLECTOR CURREMT (mA) 3/5 1000 IC 3000 (mA) 14-Aug-2012 WTM772 WTM882 IC 3000 —— Cob/Cib VBE —— VCB/VEB 500 f=1MHz IE=0/IC=0 1000 T= a 25 ℃ 100 CAPACITANCE 100 T= a 10 0℃ COLLECTOR CURRENT C IC (pF) (mA) Ta=25 ℃ Cib 10 Cob COMMON EMITTER VCE= 2V 10 0.1 1 0 300 600 900 1200 PC COLLECTOR POWER DISSIPATION PC (mW) 600 —— 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 10 V 20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE WEITRON http://www.weitron.com.tw 100 Ta 125 150 (℃) 4/5 14-Aug-2012 WTM772 WTM882 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K Dim A B C D E G H J K L D L WEITRON http://www.weitron.com.tw 5/5 Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 14-Aug-2012