MPSA43 High-Voltage NPN Transistors 1. EMITTER 2. BASE 3. COLLECTOR P b Lead(Pb)-Free 1 2 3 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 200 200 6.0 500 Unit Vdc Vdc Vdc mAdc Total Device Dissipation T A =25°C PD 0.625 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 200 - Vdc Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 200 - Vdc Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 6.0 - Vdc Collector Cutoff Current (VCB= 160 Vdc, IE=0) ICBO - 0.1 µA Emitter Cutoff Current (VEB= 4.0Vd c, IC =0) IEBO - 0.1 µA WEITRON http://www.weitron.com.tw 1/3 29-Mar-06 MPSA43 WEITRON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Symbol Min Max Unit (IC= 10 mAdc, VCE= 10Vdc) HFE(1) HFE(2) - - (IC= 30 mAdc, VCE= 10Vdc) HFE(3) 25 40 40 VCE(sat) - 0.4 Vdc VBE(sat) - 0.9 Vdc fT 50 - MHz Characteristics On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2.0 mAdc) Base-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2.0 mAdc) Transistion Frequency (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) WEITRON http://www.weitron.com.tw 2/3 29-Mar-07 MPSA43 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 WEITRON http://www.weitron.com.tw 3/3 29-Mar-07