WTC2312 - Weitron

WTC2312
N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
DRAIN CURRENT
4.9 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
P b Lead(Pb)-Free
1 GATE
Features:
* Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<41mΩ @VGS=4.5V
RDS(ON)<47mΩ @VGS=2.5V
RDS(ON)<57mΩ @VGS=1.8V
* Capable of 2.5V gate drive
* Rugged and Reliable
* Lower On-Resistance
2 SOURCE
3
1
2
SOT-23
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
Maximum Ratings(TA=25℃
Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
V DS
20
Gate-Source Voltage
VG S
±8
Continuous Drain Current 3 ,[email protected](TA=25°C)
ID
,[email protected](TA=70°C)
Unit
V
4.9
3.4
A
Pulsed Drain Current 1, 2
IDM
15
Total Power Dissipation(TA=25°C)
PD
0.75
W
R θJA
140
°C /W
TJ
+150
°C
Tstg
-55~+150
°C
Maximum Junction-ambient 3
Operating Junction Temperature Range
Storage Temperature Range
Device Marking
WTC2312=N12
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Rev.B 04-Aug-09
WTC2312
Electrical Characteristics (TA =25°C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
V (BR)DSS
20
-
-
Unit
Static
Drain-Source Breakdown Voltage
V G S =0, ID
V
Gate-Source Threshold Voltage
0.6
1.0
V G S(Th)
0.4
IG S S
-
-
±100
IDS S
-
-
1
R DS(on)
-
31
24
21
57
47
41
g fs
-
40
-
S
Input Capacitance
VGS=0V, VDS=8V, f=1.0MHz
Ciss
-
500
Output Capacitance
VGS=0V, VDS=8V, f=1.0MHz
Coss
-
300
-
pF
Reverse Transfer Capacitance
VGS=0V, VDS=8V, f=1.0MHz
Crss
-
140
-
V DS =V GS , ID =250 A
Gate-Source Leakage Current
V G S = ± 8V
Drain-Source Leakage Current(Tj=25˚C)
V DS =20V,VG S =0
nA
Drain-Source On-Resistance
V G S =1.8V,I D =4.0A
V G S =2.5V,I D =4.5A
V G S =4.5V,I D =5.0A
Forward Transconductance
V DS =10V, ID =5.0A
mΩ
Dynamic
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-
Rev.B 04-Aug-09
WTC2312
Switching
Turn-on Delay Time2
VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω
t d(on)
-
15
25
Rise Time
VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω
tr
-
40
60
ns
td
VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω
)
-
48
70
45
Fall Time
VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω
tf
-
31
Total Gate Charge2
VDS=10V, VGS=4.5V,ID=5A
Qg
-
11.2
Gate-Source Charge
VDS=10V, VGS=4.5V,ID=5A
Q gs
-
1.4
-
Gate-Drain Change
VDS=10V, VGS=4.5V,ID=5A
Qgd
-
2.2
-
nC
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS =0V, IS =1.7A
Diode Forward Current
V SD
-
-
1.2
V
IS
-
-
1.7
A
Note: 1. Pulse width limited by Max, junction temperature.
3. Surface mounted on 1 in2 copper pad of PCB board.
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Rev.B 04-Aug-09
WTC2312
12
12
8
ID , Drain Current (A)
o
T A =25 C
ID , Drain Current (A)
T A = 150 o C
5.0V
4.5V
3.5V
2.5V
4
5.0V
4.5V
3.5V
2.5V
8
4
V G =1.8V
V G =1.8V
0
0
1
2
0
3
0
V DS , Drain-to-Source Voltage (V)
2
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
70
1.6
ID=4A
V G =5V
I D =3A
1.4
Normalized RDS(ON)
T A =25 o C
60
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
50
1.2
1.0
40
0.8
0.6
30
2
4
6
8
10
-50
0
50
100
150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( ºC)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4.0
1.8
3.0
1.4
o
Normalized VGS(th) (V)
IS(A)
0
o
T j =150 C
T j =25 C
2.0
1.0
1.0
0.6
0.0
0.2
0
0.2
0.4
0.6
0.8
1
1.2
-50
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
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0
50
100
150
T j , Junction Temperature (ºC)
4/6
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Rev.B 04-Aug-09
WTC2312
I D =4A
10
C iss
V DS =10V
V DS =12V
V DS =16V
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
12
6
100
C oss
C rss
4
2
0
0
2
4
6
8
10
10
1
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
Normalized Thermal Response (R thja)
Duty factor=0.5
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 270ºC/W
0.001
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
Fig 11. Switching Time Circuit
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Q
Fig 12. Gate Charge Circuit
5/6
Rev.B 04-Aug-09
WTC2312
SOT-23 Outline Dimension
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP VIEW
C
D
E
G
H
K
J
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L
M
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Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
Rev.B 04-Aug-09