WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead(Pb)-Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive * Rugged and Reliable * Lower On-Resistance 2 SOURCE 3 1 2 SOT-23 Application: * Power Management in Notebook Computer. * Portable Equipment. * Battery Powered System. Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage V DS 20 Gate-Source Voltage VG S ±8 Continuous Drain Current 3 ,[email protected](TA=25°C) ID ,[email protected](TA=70°C) Unit V 4.9 3.4 A Pulsed Drain Current 1, 2 IDM 15 Total Power Dissipation(TA=25°C) PD 0.75 W R θJA 140 °C /W TJ +150 °C Tstg -55~+150 °C Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range Device Marking WTC2312=N12 WEITRON http://www.weitron.com.tw 1/6 Rev.B 04-Aug-09 WTC2312 Electrical Characteristics (TA =25°C Unless otherwise noted) Characteristic Symbol Min Typ Max V (BR)DSS 20 - - Unit Static Drain-Source Breakdown Voltage V G S =0, ID V Gate-Source Threshold Voltage 0.6 1.0 V G S(Th) 0.4 IG S S - - ±100 IDS S - - 1 R DS(on) - 31 24 21 57 47 41 g fs - 40 - S Input Capacitance VGS=0V, VDS=8V, f=1.0MHz Ciss - 500 Output Capacitance VGS=0V, VDS=8V, f=1.0MHz Coss - 300 - pF Reverse Transfer Capacitance VGS=0V, VDS=8V, f=1.0MHz Crss - 140 - V DS =V GS , ID =250 A Gate-Source Leakage Current V G S = ± 8V Drain-Source Leakage Current(Tj=25˚C) V DS =20V,VG S =0 nA Drain-Source On-Resistance V G S =1.8V,I D =4.0A V G S =2.5V,I D =4.5A V G S =4.5V,I D =5.0A Forward Transconductance V DS =10V, ID =5.0A mΩ Dynamic WEITRON http://www.weitron.com.tw 2/6 - Rev.B 04-Aug-09 WTC2312 Switching Turn-on Delay Time2 VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω t d(on) - 15 25 Rise Time VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω tr - 40 60 ns td VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω ) - 48 70 45 Fall Time VGEN=4.5V, VDD=10V,ID=1.0A, RG=6Ω tf - 31 Total Gate Charge2 VDS=10V, VGS=4.5V,ID=5A Qg - 11.2 Gate-Source Charge VDS=10V, VGS=4.5V,ID=5A Q gs - 1.4 - Gate-Drain Change VDS=10V, VGS=4.5V,ID=5A Qgd - 2.2 - nC Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V, IS =1.7A Diode Forward Current V SD - - 1.2 V IS - - 1.7 A Note: 1. Pulse width limited by Max, junction temperature. 3. Surface mounted on 1 in2 copper pad of PCB board. WEITRON http://www.weitron.com.tw 3/6 Rev.B 04-Aug-09 WTC2312 12 12 8 ID , Drain Current (A) o T A =25 C ID , Drain Current (A) T A = 150 o C 5.0V 4.5V 3.5V 2.5V 4 5.0V 4.5V 3.5V 2.5V 8 4 V G =1.8V V G =1.8V 0 0 1 2 0 3 0 V DS , Drain-to-Source Voltage (V) 2 3 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 70 1.6 ID=4A V G =5V I D =3A 1.4 Normalized RDS(ON) T A =25 o C 60 RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) 50 1.2 1.0 40 0.8 0.6 30 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( ºC) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 4.0 1.8 3.0 1.4 o Normalized VGS(th) (V) IS(A) 0 o T j =150 C T j =25 C 2.0 1.0 1.0 0.6 0.0 0.2 0 0.2 0.4 0.6 0.8 1 1.2 -50 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode WEITRON http://www.weitron.com.tw 0 50 100 150 T j , Junction Temperature (ºC) 4/6 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Rev.B 04-Aug-09 WTC2312 I D =4A 10 C iss V DS =10V V DS =12V V DS =16V 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1000 12 6 100 C oss C rss 4 2 0 0 2 4 6 8 10 10 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 ID (A) 10 Normalized Thermal Response (R thja) Duty factor=0.5 100us 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Single Pulse Rthja = 270ºC/W 0.001 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Fig 11. Switching Time Circuit WEITRON http://www.weitron.com.tw Q Fig 12. Gate Charge Circuit 5/6 Rev.B 04-Aug-09 WTC2312 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 Rev.B 04-Aug-09