WT2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package Maximum Ratings(TA=25℃ 1 2 SOT-23 Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current3 ,VGS@10V(TA ID ,VGS@10V(TA Unit V 3.0 2.3 A Pulsed Drain Current1,2 IDM 10 Total Power Dissipation(TA=25 ℃ ) PD 1.38 W RɵJA 90 ℃/W TJ, Tstg -55~+150 ℃ Maximum Junction-ambient3 Operating Junction and Storage Temperature Range Device Marking WT2310=2310 WEITRON http:www.weitron.com.tw 1/6 05-May-05 WT2310 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max V(BR)DSS 60 - - Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250μA V Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±20V VGS(Th) 1.0 - 3.0 IGSS - - ±100 - - 10 Drain-Source Leakage Current(Tj=25℃) VDS=60V,VGS=0 μA IDSS Drain-Source Leakage Current(Tj=70℃) nA - - 25 - - 90 120 mΩ gfs - 5.0 - S Ciss - 490 780 Coss - 55 - Crss - 40 - VDS=48V,VGS=0 Drain-Source On-Resistance RDS(on) VGS=10V,ID=3A VGS=4.5V,ID=2A Forward Transconductance VDS=5V,ID=3 A Dynamic Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz WEITRON http:www.weitron.com.tw 2/6 pF 05-May-05 WT2310 Switching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω Rise Time VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω td(on) - 6 - tr - 5 ns Turn-off Delay Time VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω Fall Time VDS=30V,VGS=10V,ID=1A,RD=30Ω,RG=3.3Ω Total Gate Charge2 VDS=48V,VGS=4.5V,ID=3A Gate-Source Charge VDS=48V,VGS=4.5V,ID=3A Gate-Drain Change VDS=48V,VGS=4.5V,ID=3A td (off) - 16 - tf - 3 - Qg - 6 10 Qgs - 1.6 - Qgd - 3 - VSD - - 1.2 V Trr - 25 - ns Qrr - 26 - nC nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=1.2A Reverse Recovery Time VGS=0V,IS=3A, dl/dt=100A/μs Reverse Recovery Charge VGS=0V,IS=3.9A,dl/dt=100A/μs Note: 1. Pulse width limited by max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad. 3/6 05-May-05 WT2310 10 TA=25°C 8 7.0V 4.5V VG=3.0V 4 7.0V 5.0V 4.5V 6 VG=3.0V 4 2 2 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VDS ,Drain-to-source Voltage(V) VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics FIG.1 Typical Output Characteristics 105 2.0 ID = 2A TA = 25°C ID = 3A VG = 10V 1.8 1.6 Normalized RDs(on) 99 93 RDs(on) (mΩ) 10V 8 5.0V 6 87 81 75 TA=150°C 10V ID ,Drain Current (A) ID ,DRAIN CURRENT (A) 10 1.4 1.2 1.0 0.8 2 4 6 8 VGS ,Gate-to-source Voltage(V) 0.6 10 -50 0 50 100 150 Tj ,Junction Temperature(°C) Fig.3 On-Resistance v.s. Gate Voltage Fig.4 Normalized OnResistance 1.4 4 1.2 3 Tj = 150°C RDs(on) (mΩ) RDs(on) (mΩ) 1.0 2 Tj = 25°C 1 0.8 0.6 0 0 0.2 0.4 0.6 0.8 1 VDS ,Source-to-Drain Voltage(V) 0.4 1.2 Fig.5 Forward Characteristics of Reverse Diode WEITRON http://www.weitron.com.tw -50 0 50 100 Tj ,Junction Temperature(°C) 150 Fig.6 Gate Threshold Voltage v.s. Junction Temperature 4/6 05-May-05 WT2310 ID = 3A 12 Ciss VDS = 30V VDS = 38V VDS = 48V 10 8 C(pF) VGS , Gate to Source Voltage(V) f = 1.0MHz 1000 14 6 100 Coss 4 Crss 2 0 0 3 6 9 12 0 15 1 1 θ Normalized Thermal Response(R ja) 100,000 10,00 100us 1,000 ID(A) 1ms 10ms 100ms Is TA = 25°C Single Pulse 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics Fig 7. Gate Charge Characteristics 0.010 9 VDS, Drain-to-Source Voltage(V) QG , Total Gate Charge(nC) 0.100 5 DC Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 0.01 t T 0.01 Duty factor = t / T Peak Tj=PDM x Rθju + Tu Rθja=270°C / W Single pulse 0.001 0.001 0.1 1 10 100 VDS , Drain-to-Source Voltage(V) 0.0001 1000 Fig 9. Maximum Safe Operation Area 0.001 0.01 0.1 1 10 100 1000 t, Pulse Width(s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Fig 11. Switching Time Circuit WEITRON http://www.weitron.com.tw Q Fig.12 Gate Charge Waveform 5/6 05-May-05 WT2310 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 05-May-05