KTA1298 PNP Silicon Transistors COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD Value 200 Unit mW mW/ C R θJA 1.6 625 TJ, Tstg -55 to +150 C C/W Device Marking KTA1298=IO, IY ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) V(BR)CEO -30 - Vdc Collector-Base Breakdown Voltage (IC= -1 uAdc, IE=0) V(BR)CBO -35 - Vdc Emitter-Base Breakdown Voltage (IE= -1 uAdc, IC=0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB= -30Vdc, IE=0) ICBO - -1.0 uAdc Emitter Cutoff Current (VEB= -5.0 Vdc, I C=0) IEBO - -1.0 uAdc 1. FR-5=1.0 I I 0.75 I I 0.062 in WEITRON http://www.weitron.com.tw KTA1298 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min hFE (1) hFE (2) 100 - 320 - 40 - - - VCE(sat) - - -0.4 Vdc Cob - 2.0 - PF fT 80 - - MHz Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -1 Vdc) (IC= -800 mAdc, VCE= -1 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -20mAdc) Output Capacitance (VCB =-10Vdc, I E =0, f=1MHZ) Transition Frequency (IC= -10mAdc, VCE=-5 Vdc, f=30MHz) CLASSIFICATION OF hFE (1) Rank O Y Range 100-200 160-320 WEITRON http://www.weitron.com.tw KTA1298 FIG.1 FIG.3 FIG.5 WEITRON http://www.weitron.com.tw FIG.2 FIG.4 KTA1298 SOT-23 Package Outline Dimensions Unit:mm Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw L M