S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value -25 -40 -5 -500 Unit Vdc Vdc Vdc mAdc PCM 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg Total Device Dissipation TA =25 C -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -25 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5 - Vdc Collector Cutoff Current (VCE= -20 Vdc, IB =0) ICE0 - -0.1 uAdc Collector Cutoff Current (VCB= -40 Vdc, IE=0) ICBO - -0.1 uAdc Emitter Cutoff Current (VEB= -5.0V d c, IC =0) IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw WE IT R ON S9012 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Min Max Unit hFE(1) hFE(2) 64 40 300 - - VCE(sat) - -0.6 Vdc VBE(sat) - -1.2 Vdc fT 150 - MHz Symbol Characteristics On Characteristics DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) (IC= -500 mAdc, VCE= -1Vdc) Collector-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc) Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc) Transition frequency Classification Of h FE(1) Rank D E F Range 64-91 78-112 96-135 WEITRON http://www.weitron.com.tw G 112-166 H 144-202 I 190-300 S9012 Typical Characteristics WEITRON http://www.weitron.com.tw WE IT R ON S9012 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50