10SQ050 Pb Free Plating Product ® Pb 10SQ050 10A,50V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode R-6 FEATURES ● ● ● ● ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.360 (9.1) 0.340(8.6) DIA. 0.360(9.1) 0.340(8.6) MECHANICAL DATA Case: R-6 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.072 ounce, 2.05 grams 1.0 (25.4) MIN. 0.052 (1.3) 0.048 (1.2) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. PARAMETER SYMBOL 10SQ050 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 V Maximum RMS Voltage VRMS 35 V VDC(AV) 50 V IF 10 A IFSM 250 A VF 0.55 V IR 0.05 10 mA Maximum DC Blocking Voltage Average Rectified Output Current @Tc=130°C Peak Forward Surge Current 8.3ms single half sine-wave Tj=25°C Maximum Forward Voltage at 10A DC Note(1) Tj=25°C Maximum DC Reverse Current at Rated DC Tj=25°C Blocking Voltage Tj=100°C Typical thermal resistance Junction to Case (Note 3) RΘJC 11 °C/W Typical thermal resistance Junction to Ambient (Note 3) RΘJA 28 °C/W Typical Thermal Resistance (Note 2) CJ 720 pF Operating junction temperature TJ 125 °C Tj (Note 4) ≦200 °C TSTG -55 to +150 °C Junction temperature in DC forward current without reverse bias, t ≦ 1 h Storage temperature range Note : (1) 300us Pulse Width, 2% Duty Cycle. (2) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC. (3) Thermal Resistance test performed in accordance with JESD-51. (4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ 10SQ050 ® RATINGS AND CHARACTERISTIC CURVES FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT FIG.1- FORWARD CURRENT DERATING CURVE 250 PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) 12 10 200 8 150 6 100 4 2 RESISTIVE OR INDUCTIVE LOAD 50 8.3ms Single Half Sine-Wave 0 0 0 25 50 75 100 125 150 175 1 200 10 O FI G.4- TYPICAL FORWARD CHARACTERIS TICS FIG.3- TYPICAL JUNCTION CAPACITANCE 100 INSTANTANEOUS FORWARD CURRENT, (A) 10000 100 NUMBER OF CYCLES AT 60Hz CASE TEMPERATURE, ( C) Tj=150°C Capacitance,(pF) 10 1000 Tj=125°C Tj=25°C, 1 PULSE WIDTH 300us, 2% Duty Cycle 0.1 100 1 10 0.1 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 INSTANTANEOUS FORWARD VOLTAGE, (V) REVERSE,VOLTAGE FIG.5- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (mA) 100 Tj=125°C 10 Tj=100°C 1 Tj=75°C Tj=50°C 0.1 Tj=25°C 0.01 0.001 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE, (V) Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/