10SQ050

10SQ050
Pb Free Plating Product
®
Pb
10SQ050
10A,50V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode
R-6
FEATURES
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The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.360 (9.1)
0.340(8.6)
DIA.
0.360(9.1)
0.340(8.6)
MECHANICAL DATA
Case: R-6 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.072 ounce, 2.05 grams
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
SYMBOL
10SQ050
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
V
Maximum RMS Voltage
VRMS
35
V
VDC(AV)
50
V
IF
10
A
IFSM
250
A
VF
0.55
V
IR
0.05
10
mA
Maximum DC Blocking Voltage
Average Rectified Output Current
@Tc=130°C
Peak Forward Surge Current 8.3ms single half sine-wave
Tj=25°C
Maximum Forward Voltage at 10A DC
Note(1)
Tj=25°C
Maximum DC Reverse Current at Rated DC Tj=25°C
Blocking Voltage
Tj=100°C
Typical thermal resistance Junction to Case (Note 3)
RΘJC
11
°C/W
Typical thermal resistance Junction to Ambient (Note 3)
RΘJA
28
°C/W
Typical Thermal Resistance (Note 2)
CJ
720
pF
Operating junction temperature
TJ
125
°C
Tj
(Note 4)
≦200
°C
TSTG
-55 to +150
°C
Junction temperature in DC forward current without reverse
bias, t ≦ 1 h
Storage temperature range
Note :
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3) Thermal Resistance test performed in accordance with JESD-51.
(4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
10SQ050
®
RATINGS AND CHARACTERISTIC CURVES
FIG.2- MAXIMUM NON-REPETITIVE SURGE
CURRENT
FIG.1- FORWARD CURRENT DERATING CURVE
250
PEAK FORWARD SURGE CURRENT,
(A)
AVERAGE FORWARD CURRENT, (A)
12
10
200
8
150
6
100
4
2
RESISTIVE OR INDUCTIVE LOAD
50
8.3ms Single Half Sine-Wave
0
0
0
25
50
75
100
125
150
175
1
200
10
O
FI G.4- TYPICAL FORWARD CHARACTERIS TICS
FIG.3- TYPICAL JUNCTION CAPACITANCE
100
INSTANTANEOUS FORWARD
CURRENT, (A)
10000
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
Tj=150°C
Capacitance,(pF)
10
1000
Tj=125°C
Tj=25°C,
1
PULSE WIDTH 300us,
2% Duty Cycle
0.1
100
1
10
0.1
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
INSTANTANEOUS FORWARD VOLTAGE, (V)
REVERSE,VOLTAGE
FIG.5- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (mA)
100
Tj=125°C
10
Tj=100°C
1
Tj=75°C
Tj=50°C
0.1
Tj=25°C
0.01
0.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (V)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/