55NF06 Pb Free Plating Product ® 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. SYMBOL U55NF06 P55NF06 F55NF06 D55NF06 TO-220/TO-220F 3 FEATURES * RDS(ON) = 23m@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability 12 TO-251/IPAK 3 TO-251/IPAK TO-220 TO-220F TO-252/DPAK 12 APPLICATION Auotmobile Convert System Networking DC-DC Power System Power Supply etc.. TO-252/DPAK 2.Drain 1.Gate 3.Source ABSOLUTE MAXIMUM RATINGS PARAMETER 3 RATINGS UNIT 60 V ±20 V TC = 25°C 50 A Continuous Drain Current ID TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Single Pulsed (Note 3) EAS 480 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO-220 120 W TO-251 Power Dissipation (TC=25°C) PD W 90 TO-252 136 W Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.38mH, IAS=50A, VDD=25V, RG=20, Starting TJ=25°C 4. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25°C Drain-Source Voltage Gate-Source Voltage © 2006 Thinki Semiconductor Co.,Ltd. SYMBOL VDSS VGSS Page 1/6 http://www.thinkisemi.com/ 55NF06 ® THERMAL DATA PARAMETER Junction to Ambient Junction to Case JA JC RATING 62 62 UNIT °C/W °C/W 100 1.24 1.28 1.1 °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL TO-220 TO-251 TO-252 TO-220 TO-251 TO-252 SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V ID = 250 A, ϦBVDSS/ƸTJ Referenced to 25°C VGS(TH) RDS(ON) VDS = VGS, ID = 250 A VGS = 10 V, ID = 25 A CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz MIN TYP MAX UNIT 60 10 100 -100 0.07 2.0 18 V A nA nA V/°C 4.0 23 V m 900 1220 430 550 80 100 pF pF pF 40 100 90 80 30 9.6 10 60 200 180 160 40 ns ns ns ns nC nC nC 1.5 V 50 A 200 A ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID =25 A, Turn-On Rise Time tR R Turn-Off Delay Time tD(OFF) G = 50 (Note 1, 2) Turn-Off Fall Time tF Total Gate Charge QG VDS = 48V, VGS = 10 V Gate-Source Charge QGS ID = 50A (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS ANDʳMAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD IS = 50A, VGS = 0 V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR IS = 50A, VGS = 0 V dIF / dt = 100 A/s Reverse Recovery Charge QRR 54 81 ns C Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2% 2. Essentially independent of operating temperature Page 2/6 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 55NF06 ® TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms Page 3/6 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 55NF06 ® TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG VDD ID(t) VDS(t) VDD 10V D.U.T. tp tp Time Fig. 4A Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ Fig. 4B Unclamped Inductive Switching Waveforms Page 4/6 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 55NF06 Drain Current, ID (A) TYPICAL CHARACTERISTICS Drain Current, ID (A) ® On State Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage 2.5 102 2.0 150°C 1.5 1.0 101 VGS=10V *Note: 1. VGS=0V 2. 250μs Test VGS=20V 0.5 25°C 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) 0.0 0 20 40 60 80 100 120 140160180 200 Drain Current, ID (A) Page 5/6 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 55NF06 ® TYPICAL CHARACTERISTICS(Cont.) Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 *Note: 1. VGS=0V 2. ID=250μA 0.8 -100 -50 0 150 200 50 100 Junction Temperature, TJ (°C) 3.0 On-Resistance Variation vs. Junction Temperature 2.5 2.0 1.5 1.0 0.5 0.0 *Note: 1. VGS=10V 2. ID=25A -50 0 50 100 150 Junction Temperature, TJ (°C) Maximum Drain Current vs. Case Temperature Maximum Safe Operating 50 Drain Current, ID (A) Drain Current , ID,(A) 103 Operation in This Area by RDS (on) 100μs 1ms 102 10ms 1 10 10ms *Note: 1. Tc=25°C 2. TJ=150°C -1 3. Single Pulse 10 100 10-1 40 30 20 10 0 100 101 102 Drain-Source Voltage, VDS (V) 25 75 50 100 125 Case Temperature, TC (°C) 150 Thermal Response, ZJC (t) Page 6/6 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/