15SQ045 - Thinki Semiconductor Co.,Ltd.

15SQ045
Pb Free Plating Product
®
Pb
15SQ045
15A,45V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode
R-6
FEATURES
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The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.360 (9.1)
0.340(8.6)
DIA.
0.360(9.1)
0.340(8.6)
MECHANICAL DATA
Case: R-6 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.072 ounce, 2.05 grams
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current
@Tc=115°C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
Maximum Forward Voltage at 15A DC
Note(1)
Tj=25°C
Maximum DC Reverse Current at Rated DC Tj=25°C
Tj=100°C
Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature
Junction temperature in DC forward current without reverse
bias, t ≦ 1 h
Storage temperature range
SYMBOL
15SQ045
UNIT
VRRM
45
V
VDC(AV)
45
V
IF
15
A
IFSM
275
A
VF
0.55
V
IR
1.0
100
mA
CJ
1300
pF
RΘJL
2.0
RΘJC
7.0
RΘJA
40
TJ
150
Tj
(Note 4)
TSTG
200
≦
-55 to +150
°C/W
°C
°C
°C
Note :
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3) Thermal Resistance test performed in accordance with JESD-51;
RthjL is measured on 1mm from body and RthjC is measured on surface center of body.
(4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
15SQ045
®
RATINGS AND CHARACTERISTIC CURVES
FIG.1- FORWARD CURRENT DERAT ING CURVE
FIG.2- MAXIMUM NON-R EPETITIVE SURGE
CURRENT
270
PEAK FORWARD SURGE CURRE NT, ( A)
AVERAGE FORWARD CURRENT, (A)
16
14
12
10
8
6
4
2
RESISTIVE OR INDUCTIVE LOAD
225
180
135
90
45
8.3ms Single Half Sine-Wave
0
0
0
25
50
75
100
℃
125
1
150
10
FIG.4- TYPICAL FORWARD CHARACTERISTICS
FIG.3- TYPICAL JUNCTION CAPACITANCE
100
INSTANTANEOUS FORWARD CURRENT,
(A)
10000
Capacitance,(pF)
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERAT URE, ( )
1000
100
1
10
Tj=125°C
10
Tj=25°C,
1
0.1
PULSE WIDTH 300us,
2% Duty Cycle
0.01
0.001
100
REVERSE VOLTAGE, (V)
0.101
0.201
0.301
0.401
0.501
INST ANTANEOUS FORWARD VOLTAGE, (V)
FIG.5- TYPICAL REVERSE C HARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, (mA)
Tj=150°C
Tj=125°C
100
10
1
Tj=25°C
0.1
0.01
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/