15SQ045 Pb Free Plating Product ® Pb 15SQ045 15A,45V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode R-6 FEATURES ● ● ● ● ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.360 (9.1) 0.340(8.6) DIA. 0.360(9.1) 0.340(8.6) MECHANICAL DATA Case: R-6 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.072 ounce, 2.05 grams 1.0 (25.4) MIN. 0.052 (1.3) 0.048 (1.2) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Average Rectified Output Current @Tc=115°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Maximum Forward Voltage at 15A DC Note(1) Tj=25°C Maximum DC Reverse Current at Rated DC Tj=25°C Tj=100°C Blocking Voltage Typical Thermal Resistance (Note 2) Typical thermal resistance (Note 3) Operating junction temperature Junction temperature in DC forward current without reverse bias, t ≦ 1 h Storage temperature range SYMBOL 15SQ045 UNIT VRRM 45 V VDC(AV) 45 V IF 15 A IFSM 275 A VF 0.55 V IR 1.0 100 mA CJ 1300 pF RΘJL 2.0 RΘJC 7.0 RΘJA 40 TJ 150 Tj (Note 4) TSTG 200 ≦ -55 to +150 °C/W °C °C °C Note : (1) 300us Pulse Width, 2% Duty Cycle. (2) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC. (3) Thermal Resistance test performed in accordance with JESD-51; RthjL is measured on 1mm from body and RthjC is measured on surface center of body. (4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test. Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ 15SQ045 ® RATINGS AND CHARACTERISTIC CURVES FIG.1- FORWARD CURRENT DERAT ING CURVE FIG.2- MAXIMUM NON-R EPETITIVE SURGE CURRENT 270 PEAK FORWARD SURGE CURRE NT, ( A) AVERAGE FORWARD CURRENT, (A) 16 14 12 10 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 225 180 135 90 45 8.3ms Single Half Sine-Wave 0 0 0 25 50 75 100 ℃ 125 1 150 10 FIG.4- TYPICAL FORWARD CHARACTERISTICS FIG.3- TYPICAL JUNCTION CAPACITANCE 100 INSTANTANEOUS FORWARD CURRENT, (A) 10000 Capacitance,(pF) 100 NUMBER OF CYCLES AT 60Hz CASE TEMPERAT URE, ( ) 1000 100 1 10 Tj=125°C 10 Tj=25°C, 1 0.1 PULSE WIDTH 300us, 2% Duty Cycle 0.01 0.001 100 REVERSE VOLTAGE, (V) 0.101 0.201 0.301 0.401 0.501 INST ANTANEOUS FORWARD VOLTAGE, (V) FIG.5- TYPICAL REVERSE C HARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT, (mA) Tj=150°C Tj=125°C 100 10 1 Tj=25°C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/