M1 thru M7 Pb Free Plating Product ® Pb M1 thru M7 1.0 AMP SURFACE MOUNT GENERAL PURPOSE RECTIFIERS -W Features • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Plastic package has Underwriters Laboratory • Flammability Classification 94V-0 • High temperature soldering: • 260oC/10 seconds at terminals Mechanical Data • Case: SMA-W molded plastic • Terminals: Solder plated, solderable per • MIL-STD-750, method 2026 • Polarity: Indicated by cathode band • Weight: 0.004 ounce, 0.115 gram Absolute Maximum Ratings and Characteristics Ratings at 25 0C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols M1 M2 M3 M4 M5 M6 M7 Units Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified current at TL = 100 OC I(AV) 1 Amp IFSM 30 Amps VF 1.1 Volts Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (MIL-STD-750D 4066 method) Maximum instantaneous forward voltage at 1A Maximum DC reverse current TA = 25 OC at rated DC blocking voltage TA = 125 OC IR 5 Maximum reverse recovery time (Note 1) Trr 2 Typical junction capacitance (Note 2) CJ 15 Maximum thermal resistance (Note 3) RθJL 30 TJ, TS -50 to + 150 Operating and storage temperature range µA 200 µS pF O C/W O C Notes: (1) Reverse recovery test conditions: IF = 0.5A, IR = 1A, Irr = 0.25A (2) Measured at 1MHZ and applied reverse voltage of 4volts (3) 8mm2 (0.013mm thick) land areas Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ M1 thru M7 ® 1.0 25 50 75 100 125 150175 LEAD TEMPERATURE .o C 25 15 10 5 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 100 10 Tj =125o C Tj =75o C 0.1 Tj =25o C 0.01 0.001 0 20 40 60 1 5 2 10 20 50 100 NUMBER OF CYCLES AT 60 Hz Fig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT Fig. 1-FORWARD CURRENT DERATING CURVE 1 8.3ms Single Half Sine Wave (JEDEC Method) 20 80 100 120 140 PERCENT OF PEAK REVERSE VOLTAGE, % INSTANTANEOUS FORWARD CURRENT, MICROAMPERES 2.0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES 30 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B MOUNTED ON 0.315x0.315"(8.0x8.0mm) COPPER PAD AREAS 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS Fig. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Fig. 3-TYPICAL REVERSE CHARACTERISTICS 500 200 100 50 Units Mounted On 20in2 (5.4mm 2 )+0.5mil inches(0.013mm) Thick Copper Land Areas CAPACITANCE. pF THERMAL IMPEDANCE (oC/W) 1000 20 10 5 2 1 0.01 0.1 1 10 100 Tj =25 oC f=1.0MHz Vsig=50mVp-p 50 20 10 5 2 1 0 1.0 10 100 1000 100 REVERSE VOLTAGE VOLTS Fig. 5-TRANSIENT THERMAL IMPEDANCE REVERSE VOLTAGE VOLTS Fig. 6-TYPICAL JUNCTION CAPACITANCE Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/