ES1A - Thinki Semiconductor Co.,Ltd.

ES1A thru ES1J
®
Pb
ES1A thru ES1J
Pb Free Plating Product
1.0 AMPERE SURFACE MOUNT SUPER FAST RECTIFIERS
SMA-W
Features
Unit:(mm)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Easy pick and place
• For surface mounted application
• Low profile package
• Built-in strain relief
• Superfast recovery times for high efficiency
• High temperature soldering : 250℃/10 seconds at terminals.
Mechanical Data
• Case: DO-214AC(SMA-W), molded plastic
• Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026 guaranteed
• Polarity: Color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
Inductive load. For capacitive load, derate current by 20%.
Symbols ES1A ES1B ES1C ES1D ES1E ES1G ES1J Units
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
Maximum average forward rectified current TL = 75 ℃
IF(AV)
1.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
30
A
Maximum forward voltage at 1.0A
VF
Maximum reverse current
at TA = 25℃
IR
5.0
at rated DC blocking voltage
at TA = 100℃
IR
100
CJ
10
pF
trr
35
ns
RθJL
35
TJ ,TS
-55 to +150
Typical Junction Capacitance
at VR = 4.0 V, f = 1 MHZ
Typical Reverse Recovery Time
at IF = 0.5A, IR = 1.0A, Irr = 0.25A
Typical thermal resistance (Note 1)
Operating junction and storage temperature range
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
0.95
400
280
400
1.25
600
420
600
V
V
V
1.70
V
uA
O
C/W
O
C
Notes:1. Thermal resistance from junction to lead mounted on P.C.B. with 0.3 X 0.3” (8.0 X 8.0 mm ) copper pad areas.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
ES1A thru ES1J
®
18
AVERAGE FORWARD RECIFIED
CURRENT AMPERES
16
O
Tj= 25 C
f= 1 .0MHz
Vsig = 50mVp -p
CAPACITANCE, pF
14
12
10
8.0
6.0
4.0
2.0
0
0.1
1.0
0.5
0
SINGLE PHASE, HALF-WAVE, 60Hz RESISTIVE
OR INDUCTIVE LOAD P.C.B MOUNTED
ON 0.3 x 0.3" (8.0 x 8.0 mm)COPPER PAD AREAS
0
25
100
10
1
1.5
55
75
125
O
LEAD TEMPERATURE, C
REVERSE VOLTAGE, VOLTS
FIG.1 TYPICAL JUNCTION CAPACITANCE
FIG.2 MAXIMUM AVERAGE FORWARD CURRENT DERATING
10
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INVSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
1000
O
TJ= 125 C
100
O
TJ= 75 C
10
1.0
O
TJ= 25 C
0.1
20
40
60
80
100
120
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
FORWARD SURGE CURRENT, AMPERES pk
(HALF-SING WAVE)
FIG.3 TYPICAL REVERSE CHARACTERISTICS
300-400V
50-200V
1.0
.1
600V
.01
O
TJ= 25 C
.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE VOLTS
FIG.4 TYPICAL FORWARD CHARACTERISTICS
35
30
25
20
15
10
5
1
2
4
6
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.5 MAXIMUM NON-REPEITIVE SURGE CURRENT
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/