Product specification KO3423 SOT-23-3 ■ Features Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS (V) = -20V 0.4 3 1 0.55 ● RDS(ON) ＜ 150mΩ (VGS = -2.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) ＜ 100mΩ (VGS = -4.5V) 2 +0.1 0.95-0.1 +0.2 1.9-0.2 +0.05 0.1-0.01 +0.2 1.1 -0.1 D 1. Gate 0-0.1 S +0.1 0.38-0.1 2. Source G 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current (TJ=150℃) *2 TA=25℃ ------------------------------------------------TA=70℃ ID Pulsed Drain Current *1 IDM -2.4 -1.9 -2.2 -1.8 -10 A A Continuous Source Current (diode conduction) *2 IS -0.72 -0.6 A Power Dissipation *2 TA=25℃ -------------------------------------------------TA=70℃ PD 0.9 0.57 0.7 0.45 W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 TJ,Tstg RthJA Maximum Junction-to-Ambient *3 -55 to +150 145 175 ℃ ℃/W * 1. Pulse width limited by maximum junction temperature. * 2. Surface Mounted on FR4 Board, t ≤ 5 sec. * 3. Surface Mounted on FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 5 MOSFET SMD Type Product specification KO3423 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Test conditions V(BR)DSS VGS = 0 V, ID = -250 μA Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) Typ Max -20 VDS = VGS, ID = -250 μA V -0.45 -0.95 VDS = 0 V, VGS = ±8 V ±100 VDS = -20 V, VGS = 0 V -1 VDS = -20 V, VGS = 0 V, TJ = 55 ℃ -10 VDS ≤ -5 V, VGS = -4.5 V -6 VDS ≤ -5 V, VGS = -2.5 V -3 VGS = -4.5 V, ID = -2.8 A 0.08 0.10 VGS = -2.5 V, ID = -2.0 A 0.11 0.15 gfs VDS = -5 V, ID = -2.8 A 6.5 Diode Forward Voltage * VSD IS = -0.75 A, VGS = 0 V -0.8 -1.2 4.5 10 Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time μA Ω S V nC 0.7 1.1 375 VDS = -6V ,VGS = 0 , f = 1 MHz pF 95 65 td(on) 20 30 tr 40 60 30 45 20 30 td(off) Turn-Off Time VDS = -6V ,VGS = -4.5 V , ID= -2.8 A nA A Forward Transconductance * Total Gate Charge Unit VDD = -6V , RL = 6Ω , ID = -1A , VGEN =- 4.5V , RG = 6Ω tf ns * Pulse test: PW ≤ 300 μs duty cycle ≤ 2%. ■ Marking Marking N019I http://www.twtysemi.com [email protected] 4008-318-123 2 of 5 IC MOSFET SMD Type Product specification KO3423 ■ Typical Characteristics Output Characteristics 10 VGS = 5 thru 2.5 V TC = - 55_C 8 I D - Drain Current (A) I D - Drain Current (A) 8 Transfer Characteristics 10 2V 6 4 1.5 V 2 25_C 6 125_C 4 2 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 0.3 0.2 VGS = 2.5 V 0.1 4 6 8 200 Crss 0 10 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge 1.6 VDS = 10 V ID = 2.8 A On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 4 1.4 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 3.0 Coss ID - Drain Current (A) 5 2.5 Ciss 400 0 2 2.0 600 VGS = 4.5 V 0.0 0 1.5 Capacitance 800 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 0.5 1.0 VGS - Gate-to-Source Voltage (V) 3 2 1 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) http://www.twtysemi.com [email protected] 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) 4008-318-123 3 of 5 SMD Type MOSFET Product specification KO3423 Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150_C 1 TJ = 25_C 0.4 ID = 2.8 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 4 5 100 1000 Single Pulse Power 10 0.3 8 0.2 Power (W) V GS(th) Variance (V) 3 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 2 ID = 250 mA 0.1 0.0 6 4 TA = 25_C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (_C) Time (sec) 100 Safe Operating Area 10 ms 100 ms 10 I D - Drain Current (A) 10 1 ms 1 0.1 10 ms TA = 25_C Single Pulse 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) http://www.twtysemi.com [email protected] 4008-318-123 4 of 5 SMD Type MOSFET Product specification KO3423 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 http://www.twtysemi.com 10 -2 10 -1 [email protected] 1 10 4008-318-123 100 600 5 of 5