Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET VDS (V) –30 rDS(on) () ID (A) 0.080 @ VGS = –10 V –3 0.140 @ VGS = –4.5 V –2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2307DS (A7)* *Marking Code Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a, b TA= 25C TA= 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA= 25C Power Dissipationa, b TA= 70C Operating Junction and Storage Temperature Range Unit V –3 ID –2.5 IDM –12 IS –1.25 A 1.25 PD W 0.8 TJ, Tstg –55 to 150 C Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State Typical Maximum 100 RthJA 130 Unit C/W Notes a. Surface mounted on FR4 board. b. t 5 sec. Document Number: 70843 S-60570—Rev. A, 16-Nov-98 www.vishay.com FaxBack 408-970-5600 2-1 Si2307DS Vishay Siliconix Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = –10 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 VDS = –24 V, VGS = 0 V –1 Zero Gate Voltage Drain Current IDSS Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage On-State Drain Currenta ID(on) Drain Source On-Resistance Drain-Source On Resistancea rDS(on) DS( ) Forward Transconductancea Diode Forward Voltage V TJ = 55C VDS v –5 V, VGS = –10 V –10 –6 nA mA A VGS = –10 V, ID = –3 A 0.064 0.080 VGS = –4.5 V, ID = –2.5 A 0.103 0.140 gfs VDS = –10V, ID = –3 A 4.5 VSD IS = –1.25 A, VGS = 0 V W S –1.2 V Dynamicb Total Gate Charge Qg 10 VDS = –15 15 V, V VGS = –10 10 V ID ^ –3 3A 15 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 Input Capacitance Ciss 565 Output Capacitance Coss Reverse Transfer Capacitance Crss 75 td(on) 10 20 VDS = –15 15 V, V VGS = 0, 0 f = 1 MHz MH 1.9 nC C 126 pF F Switchingb Turn-On Time tr Turn-Off Time td(off) tf VDD = –15 15 V, V RL = 15 W ID ^ –1.0 A, VGEN = –10 V RG = 6 W 9 20 27 50 7 16 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70843 S-60570—Rev. A, 16-Nov-98 Si2307DS Vishay Siliconix Output Characteristics 12 Transfer Characteristics 12 TC = –55C VGS = 10 thru 5 V 10 4V I D – Drain Current (A) I D – Drain Current (A) 10 8 6 4 3V 2 25C 8 125C 6 4 2 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 800 700 C – Capacitance (pF) r DS(on) – On-Resistance ( ) Ciss 0.4 0.2 VGS = 4.5 V 600 500 400 300 200 Coss 100 Crss VGS = 10 V 0 0 0 2 4 6 8 10 0 ID – Drain Current (A) 1.6 VDS = 15 V ID = 3 A 18 24 30 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 8 1.4 r DS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) Gate Charge 10 6 6 4 2 1.2 1.0 0.8 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70843 S-60570—Rev. A, 16-Nov-98 8 10 0.6 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si2307DS Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 0.8 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 10.0 TJ = 150C 1.0 TJ = 25C 0.6 ID = –3 A 0.4 0.2 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 Single Pulse Power 12 10 0.4 8 0.2 Power (W) V GS(th) Variance (V) 2 ID = 250 mA 0.0 6 TA = 25C Single Pulse 4 –0.2 2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (C) 10 100 500 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1.00 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.10 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70843 S-60570—Rev. A, 16-Nov-98