SKM 40GD123D . 7 84 9* # Absolute Maximum Ratings Symbol Conditions IGBT *: .; 7 84 9* &* .; 7 04= 9* &*@ 08== >= + . 7 ?= 9* 1= + 4= + B 8= .; 7 084 9* 0= F . 7 84 9* >4 + . 7 ?= 9* 1= + 4= + 14= + 0== + ' >= GGGH 04= 9* ' >=GGGH 084 9* 84== &*@78%&* IGBT modules SKM 40GD123D SKM 40GDL123D ** 7 $== C A: D 8= C *: E 08== Inverse Diode &( .; 7 04= 9* &(@ &(@78%&( &( 7 0= C G .; 7 04= 9* Module &@ .; . Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . / 01 Typical Applications* . # +* 2 #3 " 04 5!6 1 +* 0 G . 7 84 9* # Characteristics Symbol Conditions IGBT min. typ. max. Units >4 44 $4 .; 7 84 9* =1 =/ + .; 7 84 9* 0> 0$ .; 7 084 9* 0$ 0? .; 7 849* >> 4$ I .; 7 0849* $= J$ I .; 7 9* G 84 1 # 7 0 !6 0$ =84 80 =1 ( ( * =00 =04 ( : ## # J= 44 1? >== >= K 81 K A: A: 7 *: &* 7 0 + &*: A: 7 = *: 7 *: *:= *: *: * * A: 7 04 &* 7 84 + A: 7 04 *: 7 84 A: 7 = @A 7 >= I @A## 7 >= I :## @;' GD Units . 7 84 9* A: SEMITRANS® 6 Values &A-. ** 7 $== &*7 84+ .; 7 084 9* A: 7 '04 =4$ LMN GDL 13-01-2009 NOS © by SEMIKRON SKM 40GD123D Characteristics Symbol Conditions Inverse Diode ( 7 :* &( 7 84 +C A: 7 = (= min. typ. max. Units .; 7 84 9* G 8 84 .; 7 084 9* G 0? .; 7 84 9* 00 08 .; 7 084 9* ( ® SEMITRANS 6 IGBT modules .; 7 84 9* 1$ 48 .; 7 084 9* &@@ O &( 7 84 + M 7 4== +MF : A: 7 = C ** 7 $== @;', I I .; 7 084 9* 84 >4 + F* 014 K 0 LMN Freewheeling Diode SKM 40GD123D SKM 40GDL123D ( 7 :* &( 7 +C A: 7 (= ( Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . / 01 Typical Applications* . # +* 2 #3 " 04 5!6 GD 2 .; 7 9* G .; 7 84 9* .; 7 084 9* .; 7 84 9* .; 7 084 9* &@@ O &( 7 + .; 7 9* + F* : A: 7 = C ** 7 $== K LMN Module *: @' 5 4 > $= ! ==4 LMN 4 0J4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. GDL 13-01-2009 NOS © by SEMIKRON SKM 40GD123D SEMITRANS® 6 Zth Symbol Zth(j-c)l Conditions Values Units @ @ @ @ 70 78 71 7> 70 78 71 8$= 84= 1? 08 ==>>J ===J/ ===04 5MN 5MN 5MN 5MN 7> ====8 @ @ @ @ 70 78 71 7> 70 78 71 4?= 11= J1 0J ==4> ===?/ ===0? 5MN 5MN 5MN 5MN 7> ====8 Zth(j-c)D IGBT modules SKM 40GD123D SKM 40GDL123D Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . / 01 Typical Applications* . # +* 2 #3 " 04 5!6 GD 3 GDL 13-01-2009 NOS © by SEMIKRON SKM 40GD123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-01-2009 NOS © by SEMIKRON SKM 40GD123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-01-2009 NOS © by SEMIKRON SKM 40GD123D UL Recognized File 63 532 * , $J * , $J 6 A, * , J1 13-01-2009 NOS A, © by SEMIKRON