SKM 40GD123D

SKM 40GD123D
. 7 84 9* #
Absolute Maximum Ratings
Symbol Conditions
IGBT
*:
.; 7 84 9*
&*
.; 7 04= 9*
&*@
08==
>=
+
. 7 ?= 9*
1=
+
4=
+
B 8=
.; 7 084 9*
0=
F
. 7 84 9*
>4
+
. 7 ?= 9*
1=
+
4=
+
14=
+
0==
+
' >= GGGH 04=
9*
' >=GGGH 084
9*
84==
&*@78%&*
IGBT modules
SKM 40GD123D
SKM 40GDL123D
** 7 $== C A: D 8= C
*: E 08== Inverse Diode
&(
.; 7 04= 9*
&(@
&(@78%&(
&(
7 0= C G
.; 7 04= 9*
Module
&@
.;
.
Features
! " #
$ % &
'
#
( ) # *+ & "
,*- , *
-
.
/ 01 Typical Applications*
. # +*
2 #3 " 04
5!6
1
+* 0 G
. 7 84 9* #
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
>4
44
$4
.; 7 84 9*
=1
=/
+
.; 7 84 9*
0>
0$
.; 7 084 9*
0$
0?
.; 7 849*
>>
4$
I
.; 7 0849*
$=
J$
I
.; 7 9*
G
84
1
# 7 0 !6
0$
=84
80
=1
(
(
*
=00
=04
(
:
##
#
J=
44
1?
>==
>=
K
81
K
A:
A: 7 *: &* 7 0 +
&*:
A: 7 = *: 7 *:
*:=
*:
*:
*
*
A: 7 04 &* 7 84 + A: 7 04 *: 7 84 A: 7 = @A 7 >= I
@A## 7 >= I
:##
@;'
GD
Units
. 7 84 9*
A:
SEMITRANS® 6
Values
&A-.
** 7 $==
&*7 84+
.; 7 084 9*
A: 7 '04
=4$
LMN
GDL
13-01-2009 NOS
© by SEMIKRON
SKM 40GD123D
Characteristics
Symbol Conditions
Inverse Diode
( 7 :*
&( 7 84 +C A: 7 = (=
min.
typ.
max.
Units
.; 7 84 9*
G
8
84
.; 7 084 9*
G
0?
.; 7 84 9*
00
08
.; 7 084 9*
(
®
SEMITRANS 6
IGBT modules
.; 7 84 9*
1$
48
.; 7 084 9*
&@@
O
&( 7 84 +
M 7 4== +MF
:
A: 7 = C ** 7 $== @;',
I
I
.; 7 084 9*
84
>4
+
F*
014
K
0
LMN
Freewheeling Diode
SKM 40GD123D
SKM 40GDL123D
( 7 :*
&( 7 +C A: 7 (=
(
Features
! " #
$ % &
'
#
( ) # *+ & "
,*- , *
-
.
/ 01 Typical Applications*
. # +*
2 #3 " 04
5!6
GD
2
.; 7 9*
G
.; 7 84 9*
.; 7 084 9*
.; 7 84 9*
.; 7 084 9*
&@@
O
&( 7 +
.; 7 9*
+
F*
:
A: 7 = C ** 7 $== K
LMN
Module
*:
@'
5 4
>
$=
!
==4
LMN
4
0J4
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GDL
13-01-2009 NOS
© by SEMIKRON
SKM 40GD123D
SEMITRANS® 6
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
@
@
@
@
70
78
71
7>
70
78
71
8$=
84=
1?
08
==>>J
===J/
===04
5MN
5MN
5MN
5MN
7>
====8
@
@
@
@
70
78
71
7>
70
78
71
4?=
11=
J1
0J
==4>
===?/
===0?
5MN
5MN
5MN
5MN
7>
====8
Zth(j-c)D
IGBT modules
SKM 40GD123D
SKM 40GDL123D
Features
! " #
$ % &
'
#
( ) # *+ & "
,*- , *
-
.
/ 01 Typical Applications*
. # +*
2 #3 " 04
5!6
GD
3
GDL
13-01-2009 NOS
© by SEMIKRON
SKM 40GD123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
13-01-2009 NOS
© by SEMIKRON
SKM 40GD123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
13-01-2009 NOS
© by SEMIKRON
SKM 40GD123D
UL Recognized
File 63 532
* , $J
* , $J
6
A,
* , J1
13-01-2009 NOS
A,
© by SEMIKRON