SKM 150GB123D

SKM 150GB123D
3 4 /5 6* #
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
38 4 /5 6*
*7
&*
./00
38 4 .50 6*
&*;
3 4 /5 6*
.50
+
3 4 :0 6*
..0
+
/00
+
&*;4/%&*
= /0
<7
SEMITRANS® 3
IGBT Modules
.0
A
3 4 /5 6*
.50
+
3 4 :0 6*
.00
+
/00
+
38 4 .50 6*
..00
+
3 4 /5 6*
/00
+
3 4 :0 6*
.C5
+
C00
+
.DD0
+
500
+
38
' D0 BBB E .50
6*
3
'D0 BBB E ./5
6*
**
4 $00 >
*7
<7
@ ./00
? /0 >
38 4 ./5 6*
Inverse Diode
&(
38 4 .50 6*
&(;
&(;4/%&(
SKM 150GB123D
&(
4 .0 > B
SKM 150GAL123D
Freewheeling Diode
&(
38 4 .50 6*
&(;
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ /0 Typical Applications*
+* 12
&(
4 .0 > B
38 4 .50 6*
Module
&;
+* . B
/500
3 4 /5 6* #
Characteristics
Symbol Conditions
IGBT
<7
&*7
<7
4
*7 &*
<7
40 min.
typ.
max.
D5
55
$5
0.
0C
38 4 /5 6*
.D
.$
38 4 ./5 6*
.$
.:
38 4 /56*
..
.D
F
38 4 ./56*
.5
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F
38 4 6*
B
/5
C
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.
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.5
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(
05
0$
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4 D +
*7
4
*7
38 4 /5 6*
38 4 ./5 6*
*70
*7
*7
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&* 4 .00 +
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4 .5
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7
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#
<7
4 ': ' E/0
38 4 6*
;< 4 $: F
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GB
1
Units
4 $00
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38 4 ./5 6*
<7 4 = .5
**
+
+
.000
*
/5
J
.$0
:0
.C
D00
L0
C/0
.$0
5/0
.00
..
&<-3
Units
K
K
0.5
MNO
GAL
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Characteristics
Symbol Conditions
Inverse Diode
(
4
&( 4 .00 +>
7*
min.
<7
40
(0
typ.
max.
38 4 /5 6*
B
/
/5
38 4 ./5 6*
B
.:
38 4 /5 6*
..
./
G
.C
Units
38 4 ./5 6*
(
®
SEMITRANS 3
IGBT Modules
38 4 /5 6*
38 4 ./5 6*
&;;
I
&( 4 .00 +
N 4 .000 +NA
7
<7
;8',
40 >
**
F
F
38 4 ./5 6*
50
5
+
A*
4 $00
K
0C
MNO
Freewheeling Diode
SKM 150GB123D
SKM 150GAL123D
(
4
&( 4 .50 +>
7*
<7
40
(0
38 4 /5 6*
B
/
38 4 ./5 6*
B
.:
/5
38 4 /5 6*
..
./
$
:L
38 4 ./5 6*
(
38 4 /5 6*
38 4 ./5 6*
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ /0 Typical Applications*
+* 12
&;;
I
&( 4 .00 +
7
<7
;8'(,
40 >
38 4 /5 6*
**
D0
5
+
A*
4 $00
K
0/5
MNO
Module
*7
;**PE77P
.5
B '
;'
Q $
$
/0
34 /5 6*
0C5
F
34 ./5 6*
05
F
00C:
MNO
C
5
/5
5
C/5
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
2
GAL
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
;
;
;
;
4.
4/
4C
4D
4.
4/
4C
.05
C5
:
/
00C
00C
000.D
QNO
QNO
QNO
QNO
4D
0000.
;
;
;
;
4.
4/
4C
4D
4.
4/
4C
/.0
L0
.$
D
00$/C
000:C
000C
QNO
QNO
QNO
QNO
4D
0000/
Zth(j-c)D
IGBT Modules
SKM 150GB123D
SKM 150GAL123D
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- , *
-
./ /0 Typical Applications*
+* 12
GB
3
GAL
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
5
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
UL Recognized
File no. E63 532
* , 5$
<-
6
* , 5$
<+
* , 5L R , 5$
11-09-2006 RAA
© by SEMIKRON