SKM 300GB123D

SKM 300GB123D
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Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
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SKM 300GAL123D
Freewheeling Diode
SKM 300GAR123D
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Characteristics
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GAR
08-09-2006 RAA
© by SEMIKRON
SKM 300GB123D
Characteristics
Symbol Conditions
Inverse Diode
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GAR
08-09-2006 RAA
© by SEMIKRON
SKM 300GB123D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
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<
<
<
4/
40
4:
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SKM 300GAL123D
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SKM 300GAR123D
4=
11110
SEMITRANS® 3
Zth(j-c)D
IGBT Modules
SKM 300GB123D
Features
! "! #
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GB
3
GAL
GAR
08-09-2006 RAA
© by SEMIKRON
SKM 300GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
08-09-2006 RAA
© by SEMIKRON
SKM 300GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
08-09-2006 RAA
© by SEMIKRON
SKM 300GB123D
UL Recognized
File 63 532
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