SKM 300GB123D . 4 05 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values .8 4 05 6* *7 &* /011 .8 4 /51 6* &*< . 4 05 6* :11 + . 4 ;1 6* 001 + =11 + &*<40%&* ? 01 >7 SEMITRANS® 3 /1 C . 4 05 6* 0$1 + . 4 ;1 6* /;1 + =11 + .8 4 /51 6* 0011 + . 4 05 6* :51 + . 4 ;1 6* 0:1 + $11 + 0E11 + 511 + .8 ' =1DDDF /51 6* . ' =1DDDF /05 6* ** 4 $11 @ *7 >7 B /011 &( .8 4 /51 6* &(< &(<40%&( SKM 300GB123D &( 4 /1 @ D SKM 300GAL123D Freewheeling Diode SKM 300GAR123D &( .8 4 /51 6* &(< &(<40%&( &( 4 /1 @ Features ! A 01 @ .8 4 /05 6* Inverse Diode IGBT Modules "! # $ % & ' # ( ) # *+ & " ,*- , * - .! /0 01 Typical Applications* +* 23 .8 4 /51 6* Module &< +* / D 0511 . 4 05 6* # Characteristics Symbol Conditions IGBT >7 &*7 >7 4 *7 &* >7 41 4 ; + *7 4 *7 *71 *7 *7 * * >7 4 /5 &* 4 011 + *7 4 05 >7 4 /5 >7 4 1 .8 4 05 6* J> '; ' F01 <> .8 4 6* 7 ## # <> 4 =G H <>## 4 =G H 7## <8' 1 GAL min. typ. max. =5 55 $5 1/ 1: + /= /$ .8 4 /05 6* /$ /; .8 4 056* 55 G H .8 4 /056* G5 E5 H .8 4 056* D 05 : .8 4 /056* D :/ :G # 4 / I /; 05 0= :0 ( ( / /: ( 4 $11 &*4 011+ .8 4 /05 6* ** 0111 * 05 K 051 E1 0; 551 G1 =11 /$1 G11 /11 0$ &>-. Units .8 4 05 6* * GB Units L L 11G5 MNO GAR 08-09-2006 RAA © by SEMIKRON SKM 300GB123D Characteristics Symbol Conditions Inverse Diode ( 4 &( 4 011 +@ 7* min. >7 41 .8 4 05 6* D .8 4 05 6* (1 typ. max. 0 05 // /0 =5 $5 Units .8 4 /05 6* ( .8 4 05 6* .8 4 /05 6* &<< J ® SEMITRANS 3 &( 4 011 + N 4 =111 +NC 7 >7 <8', IGBT Modules 41 @ ** 4 1/; &( 4 :11 +@ 7* >7 41 .8 4 05 6* D .8 4 05 6* ( .8 4 05 6* MNO 0 05 // /0 : =: .8 4 /05 6* &<< J &( 4 011 + N 4 :511 +NC 7 >7 41 @ ** Features ! <8'(, <' Q $ $ "! # $ % & ' # ( ) # *+ & " ,*- , * - .! /0 01 Typical Applications* +* 23 2 L SKM 300GAR123D GAL + C* .8 4 /05 6* SKM 300GAL123D GB /15 /1 4 $11 (1 SKM 300GB123D H .8 4 /05 6* Freewheeling Diode ( H .8 4 /05 6* /=1 := + C* 4 $11 L 1/5 MNO 01 Module *7 <**PF77P /5 D ' .4 05 6* 1:5 H .4 /05 6* 15 H 11:; MNO : 5 05 5 :05 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. GAR 08-09-2006 RAA © by SEMIKRON SKM 300GB123D Zth Symbol Zth(j-c)l Conditions Values Units < < < < 4/ 40 4: 4= 4/ 40 4: 5: /;5 :/ 1= 11= 11/;E 111/G QNO QNO QNO QNO 4= 111: SKM 300GAL123D < < < < 4/ 40 4: 4= 4/ 40 4: 1//5/ 11505 11/// 11100 11:$$ 11//: 111: QNO QNO QNO QNO SKM 300GAR123D 4= 11110 SEMITRANS® 3 Zth(j-c)D IGBT Modules SKM 300GB123D Features ! "! # $ % & ' # ( ) # *+ & " ,*- , * - .! /0 01 Typical Applications* +* 23 GB 3 GAL GAR 08-09-2006 RAA © by SEMIKRON SKM 300GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 08-09-2006 RAA © by SEMIKRON SKM 300GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 08-09-2006 RAA © by SEMIKRON SKM 300GB123D UL Recognized File 63 532 * , 5$ >- 6 * , 5$ >+ * , 5G R , 5$ 08-09-2006 RAA >+< * , 5; R , 5$ © by SEMIKRON