SKM 75GB063D
8 19 :) %
!
Absolute Maximum Ratings
Symbol Conditions
IGBT
()'
; 8 19 :)
)
; 8 /90 :)
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=00
(
/00
-
8 >9 :)
>9
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/90
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B 10
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; 8 /19 :)
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8 19 :)
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; 8 /90 :)
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8 19 :)
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SEMITRANS® 2
()) 8 C00 (D (' E 10 (D
()' F =00 (
Inverse Diode
Superfast NPT-IGBT
Modules
SKM 75GB063D
*
; 8 /90 :)
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Freewheeling Diode
SKM 75GAR063D
*
; 8 /90 :)
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100
-
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100
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Characteristics
Symbol Conditions
IGBT
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O3P
GAR
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Characteristics
Symbol Conditions
Inverse Diode
(* 8 (')
SEMITRANS® 2
* 8 >9 -D (' 8 0 (
min.
typ.
max.
Units
; 8 19 :)
,&
/99
/Q
(
; 8 /19 :)
,&
/99
(*0
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*
; 8 /19 :)
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; 8 /19 :)
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?;.
!!
(
0Q
(
/CC
K
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N
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O3P
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(
Freewheeling Diode
Superfast NPT-IGBT
Modules
(* 8 (')
(*0
; 8 /19 :)
SKM 75GB063D
*
; 8 /19 :)
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SKM 75GAR063D
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* 8 /00 !3! 8 0 -3G
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; 8 19 :)
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Module
Features
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10 Typical Applications*
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2
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9
19
9
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
-) ! %
4
5 /06"7
GB
2
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GAL
GAR
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
®
SEMITRANS 2
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
?
?
?
?
8/
81
8C
8I
8/
81
8C
190
>0
19
9
00H>I
000>H
000/>
63P
63P
63P
63P
8I
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?
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8/
81
8C
8I
8/
81
8C
990
CI0
Q1
/H
00>=/
000I9
00//
63P
63P
63P
63P
8I
00001
Zth(j-c)D
Superfast NPT-IGBT
Modules
SKM 75GB063D
SKM 75GAR063D
SKM 75GAL063D
Features
!
!
" #$ %
% & ! '
& &
%%& % ()'
(
$ )
)
)
%
* + % ,
)- !!
! #
.) .
)
!
$ ! !
/0 !
!
10 Typical Applications*
% ! !
2
,
% , 3
-) ! %
4
5 /06"7
GB
3
GAL
GAR
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
UL recognized
File no. E 63 532
)
. =/
6
)
. =/
-
)
. =1 S . =/
18-06-2007 SCT
-?
)
. =C S . =/
© by SEMIKRON