SKiiP 38AC12T4V1
2 )( 30 "
Absolute Maximum Ratings
Symbol Conditions
IGBT
-%6
8 2 )( 3
8 2 +?( 3
A
+)::
-
++(
2 ?: 3
@'
'::
B):
-
8 2 +(: 3
+:
F
2 )( 3
@@
2 ?: 3
?@
'::
(C
+&:
;:$$$<+(:
3
;:$$$<+)(
3
)(::
-
A 2 '4.
3-phase bridge inverter
SKiiP 38AC12T4V1
"
- 2 C:: -D -% 9 +( -D
-%6 E +):: -
Units
2 )( 3
-%6
MiniSKiiP®3
Values
Inverse Diode
1
8 2 +?( 3
1A
A 2 '4.
16A
" 2 +: .D 8 2 +(: 3
Module
5A67
*8
Features
!
" # $ %&'(')
Typical Applications*
* " + ,-
" . " )) ,/
Remarks
-% 0 -12 " * *
."$ . 2 +)(3
.4$ 5 " .
2 67
" $ * 89+(: 5..$ " 2 ;: $$$
<+(:37
1 = 6 ..
-
0 + .$
2 )( 30 "
Characteristics
Symbol Conditions
IGBT
-%5
7
-% 2 -%0 2 .
%6
-% 2 : -0 -% 2 -%6
-%:
%
-%57
-% 2 +( -
min.
typ.
max.
Units
(
(0C
&0(
-
:0'
.
8 2 )( 3
:0C
:0@
-
8 2 +(: 3
:0?
:0C
-
8 2 )(3
+:
++
.G
8 2 +(:3
+(
+&
.G
+0C
)
-
8 2 +(:3
"*$
)0)
)0
-
2 + A!H
&0)
:0+
1
1
:0'(
1
(&(
8 2 )( 3
. 2 +:: 0 -% 2 +( - 8 2 )(3
"*$
-% 2 )(0 -% 2 : -
I
-% 2 ;C$$$<+(-
8 2 )( 3
?0(
J
2 + J
K 2 ):C: KF
2 + J
K 2 +): KF
+&:
(
+'0?
'@(
?'
.L
@0?
.L
:0C
MK/
57
%
57
%
58;7
" - 2 &::2 +::
8 2 +(: 3
-% 2 B+(-
AC
1
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
Characteristics
Symbol Conditions
Inverse Diode
-1 2 -%
1. 2 +:: D -% 2 +( -
-1:
1
®
MiniSKiiP 3
3-phase bridge inverter
SKiiP 38AC12T4V1
min.
typ.
max.
Units
8 2 )( 3
"*$
)0)
)0(
-
8 2 +(: 3
"*$
)0+
)0(
-
8 2 )( 3
+0'
+0(
-
8 2 +(: 3
:0@
+0+
-
8 2 )( 3
@
+:
.G
8 2 +(: 3
+)
+'0(
.G
8 2 +)( 3
++)
+&
F
A
I
1 2 +:: K 2 )&C: KF
%
-% 2 B+(-
&0(
.L
58;7
" :0&&
MK/
A
,
)
)0(
N.
@(
Temperature sensor
Features
!
" # $ %&'(')
Typical Applications*
* " + ,-
" . " )) ,/
Remarks
-% 0 -12 " * *
."$ . 2 +)(3
'O0 2 )(3
+:::
G
'O0 2 +::3
+&?:
G
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
.4$ 5 " .
2 67
" $ * 89+(: 5..$ " 2 ;: $$$
<+(:37
1 = 6 ..
AC
2
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
Fig. 1 Typ. output characteristic
Fig. 2 Rated current vs. temperature IC = f (TS)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
29-10-2008 LAN
© by SEMIKRON
SKiiP 38AC12T4V1
UL recognized file
no. E 63 532
"
5
29-10-2008 LAN
© by SEMIKRON