SKM 195GB126D

SKM 195GB126D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
)
- *+ ,
$
- /+0 ,
*+,! &
/*00
**0
%
10 ,
/"0
%
400
%
6 *0
- /*+ ,
/0
:
*+ ,
/<0
%
10 ,
//+
%
*00
%
- /+0 ,
>00
%
*+ ,
/<0
%
10 ,
//+
%
*00
%
>00
%
*00
%
-
?@0 === A/+0
,
?@0 === A/*+
,
@000
$23*#$
5)
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Features
! " # $
Typical Applications*
% &
'()
&
"00 7 5 8 *0 7
) 9 /*00 Inverse Diode
$;
- /+0 ,
$;23
$;23*#$;
$;)3
/0 7 =
Freewheeling Diode
$;
- /+0 ,
$;23
$;23*#$;
$;)3
/0 7 =
- /+0 ,
Module
$23)
%! / =
Characteristics
Symbol Conditions
IGBT
5
5 ! $ " %
$)
5 0 ! )
0
5 0 *+,! &
- *+ ,
5 ?1 ===A*0
25
- ,
&
&
25 * B
25 * B
2
-?
1
$5G
max.
Units
+
+!1
"!+
0!/
0!4
%
/
/!*
0!>
/!/
- *+,
@!<
"!4
B
- /*+,
<!4
>
B
/!<
*!/+
*
*!@+
/ 3C
D5
typ.
- /*+ ,
$ /+0 %! 5 /+ - *+,
=
*+! 5 0 min.
- *+ ,
- /*+,
=
GB
Units
*+ ,
$23
SEMITRANS® 2
Values
"00
$ /+0%
- /*+ ,
5 6 /+
/0!+
0!>
;
;
0!1
;
/410
+
E
*10
+0
/"
+"0
<0
F
*@!+
F
0!/"
HIJ
GAL
01-09-2008 MAJ
© by SEMIKRON
SKM 195GB126D ...
Characteristics
Symbol Conditions
Inverse Diode
; $; /00 %7 5 0 ;0
min.
typ.
max.
Units
- *+ ,
=
*
*!+
- /*+ ,
=
/!1
- *+ ,
/!/
/!*
- /*+ ,
;
- *+ ,
>
/4
- /*+ ,
®
SEMITRANS 2
Trench IGBT Modules
$223
D
$; /+0 %
&I& **00 %I:
5 ?/+ 7 "00 2
-?K
&&
$; /00 %7 5 0 ;0
B
- /*+ ,
1"
/<
%
:
+!1
F
0!4*
HIJ
*!+
- *+ ,
=
*
- /*+ ,
=
/!1
- *+ ,
/!/
/!*
>
/4
- /*+ ,
SKM 195GAL126D
;
! " # $
Typical Applications*
% &
'()
&
$223
D
$; /+0 %
&I& **00 %I:
5 ?/+ 7 "00 2
-?;K
&&
- *+ ,
- /*+ ,
Features
B
Freewheeling diode
; SKM 195GB126D
- /*+ ,
1"
/<
%
:
+!1
F
0!4*
HIJ
Module
L
2MAM
40
=! ?
2
?
&
3
N 3"
3
3+
*+ ,
0!<+
B
/*+ ,
/
B
0!0+
HIJ
4
+
O
*!+
+
O
/"0
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
2
GAL
01-09-2008 MAJ
© by SEMIKRON
SKM 195GB126D ...
®
SEMITRANS 2
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
2
2
2
2
/
*
4
@
/
*
4
//+
4@
>
*
0!0@>4
0!0/<@
0!00/*
NIJ
NIJ
NIJ
NIJ
@
0!000*
2
2
2
2
/
*
4
@
/
*
4
*00
>0
*"
@
0!0+@
0!001>
0!00/
NIJ
NIJ
NIJ
NIJ
@
0!01
Zth(j-c)D
Features
! " # $
Typical Applications*
% &
'()
&
GB
3
GAL
01-09-2008 MAJ
© by SEMIKRON
SKM 195GB126D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
01-09-2008 MAJ
© by SEMIKRON
SKM 195GB126D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
5
01-09-2008 MAJ
© by SEMIKRON
SKM 195GB126D ...
UL Regognized
File no. E 63 532
K "/
5G
6
K"/
5%L
K "*
01-09-2008 MAJ
© by SEMIKRON