SKM 75GB123D

SKM 75GB123D
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Absolute Maximum Ratings
Symbol Conditions
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SEMITRANS® 2
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IGBT Modules
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SKM 75GAL123D
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SKM 75GAR123D
Features
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Characteristics
Symbol Conditions
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GAR
18-05-2009 NOS
© by SEMIKRON
SKM 75GB123D
Characteristics
Symbol Conditions
Inverse Diode
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min.
typ.
max.
Units
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SEMITRANS 2
IGBT Modules
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SKM 75GAL123D
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SKM 75GAR123D
Features
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GAR
18-05-2009 NOS
© by SEMIKRON
SKM 75GB123D
®
SEMITRANS 2
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
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3.
30
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PMN
PMN
PMN
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Zth(j-c)D
IGBT Modules
SKM 75GB123D
SKM 75GAL123D
SKM 75GAR123D
Features
! "
# $ %
&
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' ( " )* % +), + )
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-
./ 0/ Typical Applications*
*) 12
GB
3
GAL
GAR
18-05-2009 NOS
© by SEMIKRON
SKM 75GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
18-05-2009 NOS
© by SEMIKRON
SKM 75GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode reverse recovery charge
5
18-05-2009 NOS
© by SEMIKRON
SKM 75GB123D
UL Recognized
File 63 532
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6
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) + #0 R + #.
18-05-2009 NOS
<*;
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© by SEMIKRON