SKM 50GB063D ./ 0# ) ' Absolute Maximum Ratings Symbol Conditions IGBT %#&( 1 ./ 0# # 1 4/3 0# #67 !33 % 53 - 5/ 0# /3 - 433 - 8 .3 % 1 4./ 0# 43 = ./ 0# 5/ - ?3 0# /3 - 433 - @@3 - .33 - @3 $$$ C 4/3 0# @3 $$$ C 4./ 0# ./33 % %&( SEMITRANS® 2 Superfast NPT-IGBT Modules SKM 50GB063D %## 933 %: %& ; .3 %: %#&( < !33 % Inverse Diode > 1 4/3 0# >67 >67."> >(7 43 : $ 1 4/3 0# Module A67(B +1 % Features ! " # $ $ $ %#& ' Typical Applications* ()' ' ) *( + + , -# ' Units ./ 0# #67."# Values -# 4 $ ./ 0# ) ' Characteristics Symbol Conditions IGBT %&AB %& %#& # 4 #&( %& 3 % %#& %#&( %#&AB # # typ. max. Units @/ // !/ % 1 ./ 0# 34 39 1 ./ 0# 43/ % 1 4./ 0# 4 % 1 ./0# ./ 1 4./0# 99 1 ./0#+$ .4 ./ % 1 4./0#+$ .@ .? % 4 7E .? 39 > > 3. > 4.3 # - %#&3 #& min. %& 4/ % # /3 - %& 4/ % %#& ./ %& 3 % # F %& 3%$$$C4/% 6 1 0# 'A B & 'A B 6 .. D 6 .. D & 6A1B %## 933% # /31 4./ 0# %& 8 4/% - D D 3 G /3 @3 ./ 933 93 H 4? H 3/ I,J GB 1 05-09-2006 SEN © by SEMIKRON SKM 50GB063D Characteristics Symbol Conditions Inverse Diode %> %&# SEMITRANS® 2 > /3 -: %& 3 % min. typ. max. Units 1 ./ 0#+$ 4@/ 45 % 1 4./ 0#+$ 49/ %>3 1 4./ 0# > 1 4./ 0# 43 1 4./ 0# 94 9. 667 F > /3 ',' /3 -,= & %& 4/ %: %## 933 % 6A1BL ' ' % 3K % 4/ D =# H 4 I,J 93 Module Superfast NPT-IGBT Modules M#& SKM 50GB063D 6AB 7 O 7! 9 / 7 7/ ./ / 6##NC&&N $ ! " # $ $ $ %#& ' Typical Applications* ()' ' ) *( + + , -# 35/ D 4./ 0# 4 D ' ) Features ./ 0# 33/ 4!3 I,J This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. ' GB 2 05-09-2006 SEN © by SEMIKRON SKM 50GB063D ® SEMITRANS 2 Superfast NPT-IGBT Modules SKM 50GB063D Zth Symbol Zth(j-c)l Conditions Values 6 6 6 6 4 . 9 @ 4 . 9 .K3 4@/ /@ 44 339?. 3335? 33345 O,J O,J O,J O,J @ 33334 6 6 6 6 4 . 9 @ 4 . 9 //3 9@3 K. 4? 335!4 33@/ 3344 O,J O,J O,J O,J @ 3333. Zth(j-c)D Zth(r-s) Features ! " # $ $ $ %#& ' Units 6 6 6 6 4 . 9 @ 4 . 9 O,J O,J O,J O,J @ Typical Applications* ()' ' ) *( + + , -# ' GB 3 05-09-2006 SEN © by SEMIKRON SKM 50GB063D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 05-09-2006 SEN © by SEMIKRON SKM 50GB063D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 05-09-2006 SEN © by SEMIKRON SKM 50GB063D UL recognized File no. E 63 532 # L !4 6 # L !4 05-09-2006 SEN © by SEMIKRON