Power Transistor (100V, 2A) 2SD1980 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 0.75 0.65 B 0.9 (1) R1 R2 E R1 3.5kΩ R2 300Ω ROHM : CPT3 EIAJ : SC-63 B : Base C : Collector E : Emitter 2.3 (2) (3) 2.3 0.8Min. 2.5 0.9 C 1.5 5.5 inner circuit 9.5 1.5 0.5 0.5 1.0 (1) Base (2) Collector (3) Emitter Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Collector current IC Collector power dissipation PC Junction temperature Storage temperature Tj Tstg Limits 100 100 6 2 3 ∗1 1 10 150 −55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) °C °C ∗1 Single pulse Pw=100ms Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1980 CPT3 1k to 10k − TL 2500 ∗ Denotes hFE Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag Base-Emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 100 100 6 − − − − 1000 − − Typ. − − − − − − − − 80 25 Max. − − − 10 3 1.5 2.0 10000 − − Unit V V V μA mA V V − MHz pF Conditions IC = 50μA IC = 5mA IE = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA ∗ IC/IB = 1A/1mA VCE = 2V , IC = 1A ∗ VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ Measured using pulse current. www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 1/2 2012.01 - Rev.D 2SD1980 Data Sheet Electrical characteristic curves 10 A 0.9m A 0.8m A 0.7m A 0.6m A 0.4m 0.8 A IB=0.3m 0.4 0 0 1 2 3 4 Ta=25°C 0.5 0.2 0.1 0.05 0.02 0.2 0.6 1.0 1.4 1.8 2.2 2.6 2V 2000 1000 500 200 100 50 20 10 0.001 3.0 VCE=4V 0.01 0.1 1 10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current VCE=2V 5000 2000 500 200 100 −2 25 5° °C C Ta =1 00 °C 1000 50 20 10 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 100 Ta=25°C 50 20 10 5 IC/IB=1000 2 500 1 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10000 DC CURRENT GAIN : hFE 1 0.01 5 DC CURRENT GAIN : hFE 1.2 2 25°C −25°C A 0.5m 10000 5000 00° C 1.6 VCE=2V 5 Ta= 1 1m COLLECTOR CURRENT : IC (A) A Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) 2.0 100 IC/IB=1000 50 20 10 5 Ta=−25°C 2 1 25°C 100°C 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs.collector current Fig.6 Collector-emitter saturation voltage vs.collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage www.rohm.com c 2012 ROHM Co., Ltd. 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