Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SB1260 2SB1181 0.4+0.1 9.5±0.5 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.5 5.5+0.3 4.0 ±0.3 2.5+0.2 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.5±0.1 0.65±0.1 0.75 (2) C0.5 1.5± 1.6±0.1 (1) 2.3+0.2 6.5±0.2 5.1+0.2 1.5±0.3 0.5±0.1 4.5+0.2 0.9 Features 1) Hight breakdown voltage and high current. BVCEO= −80V, IC = −1A 2) Good hFE linearty. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1733. 2.3±0.2 1.0±0.2 3.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −80 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −5 V IC −1 Parameter Collector current −2 ICP A (DC) ∗1 A (Pulse) ∗2 W 0.5 2SB1260 Collector power dissipation 2SB1181 2 PC 1 10 W (Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2SB1181 ∗1 ∗2 2SB1260 : Pw=20ms duty=1/2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board. Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −80 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −80 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA ICBO − − −1 μA VCB= −60V Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio IEBO − − −1 μA VEB= −4V VCE(sat) − − −0.4 V IC/IB= −500mA/ −50mA hFE 120 − 390 − VCE= −3V, IC= −0.1A fT − 100 − MHz Transition frequency 2SB1181 Output capacitance 2SB1260 Conditions Cob 2SB1181 www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ − 20 − pF − 25 − pF 1/2 VCE= −10V, IE=50mA, f=100MHz VCB= −10V IE=0A f=1MHz 2012.01 - Rev.G 2SB1260 / 2SB1181 Data Sheet Packaging specifications and hFE Package Taping TL T100 2500 1000 Code Type hFE 2SB1260 QR 2SB1181 QR Basic ordering unit (pieces) − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 −100 −10 −1 −0.1 0 −2.5mA −2 −1 −0.5 −0.2 −0.1 IC/IB=20 10 −0.05 −0.02 −0.01 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −2mA −0.4 −1.5mA −1mA −0.2 Collector-emitter saturation voltage vs. collector current www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ VCE= −3V 100 −1V 50 10 −1 −2 Ta=25°C VCE= −5V 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IE (mA) Fig.5 Gain bandwidth product vs. emitter current 2/2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Grounded emitter output characteristics 1000 COLLECTOR CURRENT : IC (mA) Fig.4 200 20 −0.5mA IB=0mA −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 Fig.2 Grounded emitter propagation characteristics Ta=25°C −3mA −0.6 Ta=25°C 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSITION FREQUENCY : fT (MHz) Fig.1 −4mA −3.5mA 0 0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −4.5mA −0.8 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 1000 Ta=25°C −1.0 DC CURRENT GAIN : hFE Ta=25°C VCE= −5V Fig.3 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) −1000 COLLECTOR CURRENT : IC (A) Electrical characteristic curves DC current gain vs. collector current 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 −0.1 -0.2 −0.5 -1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage 2012.01 - Rev.G Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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