ROHM 2SB1238TV2R

Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
Dimensions (Unit : mm)
2SB1189
4.0
1.5
0.4
1.0
Collector power
dissipation
2SB1189
Unit
VCBO
−80
VCEO
−80
VEBO
−5
IC
−0.7
V
V
V
A
0.5
PC
W
2
1
Tj
150
Tstg
−55 to +150
1.6
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
∗1
∗2
°C
°C
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
2SB1238
2.5
Type
∗Denotes h
2SB1189
MPT3
QR
2SB1238
ATV
QR
−
TV2
2500
BD∗
T100
1000
1.0
0.65Max.
0.5
4.4
Packaging specifications and hFE
14.5
0.9
6.8
Package
hFE
Marking
Code
Basic ordering unit (pieces)
4.5
0.5
1.5
Limits
2SB1238
Junction temperature
Storage temperature
(3)
Symbol
0.4
Emitter-base voltage
Collector current
(1)
1.5
0.4
Parameter
Collector-base voltage
Collector-emitter voltage
0.5
(2)
3.0
Absolute maximum ratings (Ta=25C)
2.5
(1) (2) (3)
2.54 2.54
1.05
0.45
FE
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
−80
−
−
V
BVCEO
−80
−
−
V
IC=−50μA
IC=−2mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
−5
−
−
V
IE=−50μA
ICBO
−
−
−0.5
μA
VCB=−50V
IEBO
−
−
−0.5
μA
VEB=−4V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
VCE(sat)
−0.2
−
−0.4
390
V
−
IC/IB=−500mA/−50mA
hFE
−
120
fT
−
100
−
MHz
Cob
−
14
20
pF
Output capacitance
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c 2010 ROHM Co., Ltd. All rights reserved.
○
Conditions
VCE/IC=−3V/−0.1A
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
1/2
2010.07 - Rev.B
2SB1189 / 2SB1238
Data Sheet
Electrical characteristics curves
−50
A
−8m
−7mA
−6mA
−0.8
−5mA
−0.6
−4mA
−3mA
−0.4
−2mA
−0.2
−1mA
IB= 0mA
0
−2
0
−4
−6
−8
−10
−5
−2
−1
−0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=25°C
−0.2
−0.1
IC/IB=20/1
−0.05
IC/IB=10/1
−0.02
−5
−10 −20
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
Ta=25°C
VCE= −5V
500
200
100
50
−50 −100 −200 −500
2
5
10
20
50
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs. emitter current
−0.5
−1
−2
−5
−10
−20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
○
−0.5
COLLECTOR CURRENT : IC (A)
EMITTER INPUT CAPACITANCE : Cib (pF)
10
−5
−10 −20
−50 −100 −200 −500
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
f=1MHz
IE=0A
100
50
Cob
20
10
−0.5
−1
−2
−5
−10
−20
Fig.6 Collector output capacitance
vs. collector-base voltage
−0.2
s∗
0m
=1
Pw
s∗
m
00
20
−2
−1.0
DC
50
−1
=1
Pw
Ta=25°C
f=1MHz
IC=0A
−3V
COLLECTOR TO BASE VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage
vs.collector current
Cib
100
−1V
0
COLLECTOR CURRENT : IC (mA)
100
VCE= −5V
200
50
Fig.2 Ground emitter propagation characteristics
20
−0.01
−1
500
BASE TO EMITTER VOLTAGE : VBE (V)
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1 Ground emitter output characteristics
Ta=25°C
−0.2
−0.1
−10
Ta=25°C
VCE= −6V
−20
DC CURRENT GAIN : hFE
−10mA
−9mA
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (A)
−1.0
−0.1
−0.05
−0.02
−0.01
−0.005
−0.002 Ta=25°C
∗Single pulse
−0.001
−0.1 −0.2 −0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SB1189)
2/2
2010.07 - Rev.B
Notice
Notes
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R1010A