ROHM 2SB1182TLR

Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements 2SD1758 / 2SD1862.
Dimensions (Unit : mm)
2SB1182
2SB1240
2.5±0.2
0.5±0.1
1.0
9.5±0.5
1.5
2.5
0.65±0.1
0.75
0.65Max.
0.9
0.5±0.1
0.55±0.1
2.3±0.2 2.3±0.2
1.0±0.2
(1)
4.4±0.2
C0.5
(2)
14.5±0.5
0.9
Structure
Epitaxial planar type
PNP silicon transistor
2.3+0.2
−0.1
0.9
1.5±0.3
5.5+0.3
−0.1
6.8±0.2
6.5±0.2
5.1+0.2
−0.1
(3)
2.54 2.54
1.05
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
−2
A(DC)
Parameter
IC
Collector current
Collector power 2SB1182
dissipation
A (Pulse) ∗1
−3
W (Tc=25°C)
10
PC
∗2
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
2SB1240
∗
∗
1 Single pulse, Pw=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−40
−
−
V
IC= −50μA
Collector-emitter breakdown voltage
BVCEO
−32
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
ICBO
−
−
−1
μA
VCB= −20V
Emitter cutoff current
IEBO
−
−
−1
μA
VEB= −4V
Collector-emitter saturation voltage
VCE(sat)
−
−0.5
−0.8
V
IC/IB= −2A/ −0.2A
hFE
120
−
390
−
VCE= −3V, IC= −0.5A
Transition frequency
fT
−
100
−
MHz
Output capacitance
Cob
−
50
−
pF
Parameter
Collector cutoff current
DC current transfer ratio
Conditions
∗
∗
VCE= −5V, IE=0.5A, f=100MHz
VCB= −10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/3
2010.04 - Rev.C
2SB1182 / 2SB1240
Data Sheet
Packaging specifications and hFE
Package
Taping
Code
Type
hFE
2SB1182
QR
2SB1240
QR
Basic ordering unit (pieces)
TL
TV2
2500
2500
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characteristic curves
COLLECTOR CURRENT : IC (A)
−50
−20
−10
−5
−2
−1
−0.4
−1.75mA
100
50
20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
−1
IC /IB=10
−0.5
−0.2
−0.1
−0.05
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLETOR CURRENT : IC (mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
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c 2010 ROHM Co., Ltd. All rights reserved.
○
50
−250μA
−0.4
−0.8
−1.2
IB=0A
−1.6
−2
20
−500 Ta=25°C
−200
−100
IC/IB=50
−50
20
10
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
Ta=25°C
VCE= −5V
500
200
100
50
5
10
20
50
100 200
500 1000 2000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2/3
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector curren ( )
−500 lC/lB=10
−200
−100
Ta=100°C
25°C
−40°C
−50
−20
−5 −10 −20
COLLECTOR CURRENT : IC (mA)
TRANSITION FREQUENCY : fT (MHz)
BASE SATURATION VOLTAGE : VBE(sat)(V)
Ta=25°C
100
Fig.2 Grounded emitter output
characteristics
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( )
−500μA
VCE= −6V
−3V
−1V
200
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
DC CURRENT GAIN : hFE
200
−750μA
−0.1
Fig.1 Grounded emitter propagation
characteristics
VCE= −3V
−1mA
−0.2
0
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=100°C
25°C
−25°C
−1.25mA
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
500
−1.5mA
−0.3
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
−100
−2mA
Ta=25°C
500
−2.25mA
−50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
COLLECTOR CURRENT : IC (mA)
−200
−2.5mA
Ta=25°C
DC CURRENT GAIN : hFE
−0.5
VCE= −3V
−1000 Ta=100°C
25°C
−500
−40°C
300
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
200
100
Cob
50
20
10
−0.5
−1
−2
−5
−10
−20 −30
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2010.04 - Rev.C
2SB1182 / 2SB1240
COLLECTOR CURRENT : IC (A)
−5
−2
IC Max. (Pulse)
Data Sheet
PW=500μs
DC
−1
−0.5
PW=1ms
PW=100ms
−0.2
−0.1
−0.05
Ta=25°C
∗Single
nonrepetitive
pulse
−0.01
−0.1 −0.2 −0.5 −1
−0.02
−2
−5 −10 −20
−50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operation area
(2SB1182)
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c 2010 ROHM Co., Ltd. All rights reserved.
○
3/3
2010.04 - Rev.C
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R1010A