ROHM 2SB1260_11

Power Transistor (80V, 1A)
2SB1260 / 2SB1181 / 2SB1241
Dimensions (Unit : mm)
2SB1260
2SB1181
1.0±0.2
Structure
Epitaxial planar type
PNP silicon transistor
0.4+0.1
9.5±0.5
2.5
0.9
0.55±0.1
2.3±0.2
0.4±0.1
1.5±0.1
1.5
0.9
5.5+0.3
(3)
0.5±0.1
0.4±0.1
1.5±0.1
0.5±0.1
0.65±0.1
0.75
(2)
C0.5
1.5±
1.6±0.1
(1)
2.3+0.2
6.5±0.2
5.1+0.2
1.5±0.3
0.5±0.1
4.5+0.2
4.0 ±0.3
2.5+0.2
Features
1) Hight breakdown voltage and high current.
BVCEO=80V, IC = 1A
2) Good hFE linearty.
3) Low VCE(sat).
Complements the 2SD1898 / 2SD1863 / 2SD1733.
2.3±0.2
1.0±0.2
3.0±0.2
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
2.5±0.2
0.65Max.
0.5±0.1
(1)
(2)
4.4±0.2
14.5±0.5
1.0
0.9
6.8±0.2
(3)
2.54 2.54
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−80
V
Collector-emitter voltage
VCEO
−80
V
Emitter-base voltage
VEBO
−5
V
IC
−1
Collector current
ICP
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
A (DC)
∗1
A (Pulse)
2
∗2
W
1
∗3
−2
0.5
PC
10
W (Tc=25°C)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2SB1181
∗1
∗
∗
2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board.
3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
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2011.05 - Rev.F
2SB1260 / 2SB1181 / 2SB1241
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−80
−
−
V
Collector-emitter breakdown voltage
BVCEO
−80
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
Collector cutoff current
ICBO
−
−
−1
μA
VCB= −60V
Emitter cutoff current
IEBO
−
−
−1
μA
VEB= −4V
IC/IB= −500mA/ −50mA
Parameter
VCE(sat)
Collector-emitter saturation voltage
DC current transfer ratio
2SB1260, 2SB1181
hFE
2SB1241
Transition frequency 2SB1181
fT
2SB1260
Output capacitance
Cob
2SB1181, 2SB1241
Conditions
IC= −50μA
−
−
−0.4
V
120
−
390
−
120
−
390
−
−
100
−
MHz
−
20
−
pF
−
25
−
pF
VCE= −3V, IC= −0.1A
VCE= −10V, IE=50mA, f=100MHz
VCB= −10V
IE=0A
f=1MHz
Packaging specifications and hFE
Package
Taping
Code
Basic ordering
unit (pieces)
TL
TV2
T100
2500
2500
1000
−
Type
hFE
2SB1260
QR
−
2SB1241
QR
−
2SB1181
QR
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characteristic curves
400
2.5mA
2.0mA
300
1.5mA
200
1.0mA
100
IB=0.5mA
Ta=25℃
Pulsed
0
0
0.5
1
1.5
10
1
COLLECOR - EMITTER VOLTAGE : VCE [V]
1
TRANSITION FREQUENCY : f T
[MHz]
Collector Saturation Voltage :
VCE(sat) [V]
0.01
1
10
100
COLLECTOR CURRENT : IC [mA]
1000
Fig.4 Collector-Emitter Saturation
Voltage v s Collector Current
100
VCE=-1V
10
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE : VBE [V]
1
1
1000
Ta=25℃
IC /IB=20
10
VCE=-3V
Fig.2 Grounded Emitter Propagation
Characteristics
Fig.1 Ground Emitter Output Characteristics
0.1
Ta=25℃
100
0.1
0.2
2
1000
Ta=25℃
VCE=-5V
DC CURRENT GAIN : hFE
1000
3.0mA
Collector Current : I C [mA]
COLLECTOR CURRENT : I C [mA]
4.0mA
3.5mA
10
100
COLLECTOR CURRENT : IC [mA]
1000
Fig.3 DC Current Gain v s Collector Current
1000
Ta=25℃
VCE=-5V
100
10
1
10
100
EMITTER CURRENT : IE [mA]
Fig.5 Transition Frewuency v s
Emitter Current
1000
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
4.5mA
5.0mA
500
Ta=25℃
f=1MHz
IE=0A
IC =0A
Cib
100
Cob
10
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
Fig.6 Emitter Input Capacitance v s. Emitter-Base Voltage
Collector Output Capacitance v s. Collector-Base
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2011.05 - Rev.F
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R1120A