SKiM201MLI12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES IC Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 206 A Ts = 70 °C 166 A 200 A ICnom ICRM VGES SKiM® 4 tpsc Trench IGBT Modules Tj VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V IC Tj = 25 °C ICRM • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor A V 10 µs -40 ... 175 °C Tj = 175 °C 1200 V Ts = 25 °C 206 A Ts = 70 °C 166 A 200 A 600 A -20 ... 20 V 10 µs -40 ... 175 °C ICnom Features 600 -20 ... 20 IGBT2 VCES SKiM201MLI12E4 ICRM = 3 x ICnom VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V Diode1 VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 187 A Ts = 70 °C 148 A 200 A IFnom IFRM IFRM = 3 x IFnom 600 A IFSM 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Diode2 Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website Footnote 1) Please find further technical information on the SEMIKRON website. VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 187 A Ts = 70 °C 148 A 200 A IFnom IFRM IFRM = 3 x IFnom 600 A IFSM 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Diode5 VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 141 A Ts = 70 °C 111 A 200 A IFnom IFRM IFRM = 3 x IFnom 600 A IFSM 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C, Tstg Visol AC sinus 50 Hz, t = 1 min 400 A -40 ... 125 °C 2500 V MLI © by SEMIKRON Rev. 1.0 – 03.06.2015 1 SKiM201MLI12E4 Characteristics Symbol IGBT1 VCE(sat) VCE0 SKiM® 4 Trench IGBT Modules SKiM201MLI12E4 • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website 1) Please find further technical information on the SEMIKRON website. chiplevel typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.80 0.90 V Tj = 150 °C 0.70 0.80 V Tj = 25 °C 5 5.8 mΩ VGE = 15 V chiplevel VGE(th) VGE = VCE, IC = 7.6 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V QG - 15 V...+ 15 V RGint Tj = 25 °C VCE = 600 V IC = 200 A VGE = +15/15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 5700 A/µs di/dtoff = 2600 A/µs tr Eon td(off) tf Eoff Rth(j-s) IGBT2 VCE(sat) VCE0 rCE Tj = 150 °C chiplevel VGE = 15 V chiplevel Cres QG - 15 V...+ 15 V RGint Tj = 25 °C VCE = 600 V IC = 200 A VGE = +15/15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 4960 A/µs di/dtoff = 1840 A/µs td(on) Eon td(off) tf Eoff Rth(j-s) V 0.12 0.36 mA nF nF f = 1 MHz 0.69 nF 1600 nC 3.8 Tj = 150 °C Ω 182 ns Tj = 150 °C 52 ns Tj = 150 °C 14.81 mJ Tj = 150 °C 446 ns Tj = 150 °C 98 ns Tj = 150 °C 22.6 mJ 0.29 K/W Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.80 0.90 V Tj = 150 °C 0.70 0.80 V Tj = 25 °C 5 5.8 mΩ Tj = 150 °C 7.5 8 mΩ VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V mΩ 0.81 VGE = VCE, IC = 7.6 mA Cies 8 6.5 f = 1 MHz per IGBT IC = 200 A VGE = 15 V chiplevel 7.5 5.8 12.3 ICES Coes 5 f = 1 MHz VGE(th) tr Footnote IC = 200 A VGE = 15 V chiplevel min. rCE td(on) Features Conditions 5 5.8 6.5 V 0.12 0.36 mA f = 1 MHz 12.3 nF f = 1 MHz 0.81 nF f = 1 MHz Tj = 150 °C 0.69 nF 1600 nC 3.8 Ω 184 ns Tj = 150 °C 59 ns Tj = 150 °C 7.33 mJ Tj = 150 °C 457 ns Tj = 150 °C 73 ns Tj = 150 °C 23.87 mJ 0.29 K/W per IGBT MLI 2 Rev. 1.0 – 03.06.2015 © by SEMIKRON SKiM201MLI12E4 Characteristics Symbol Diode1 VF = VEC VF0 chiplevel IRRM Trench IGBT Modules SKiM201MLI12E4 Qrr Err • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website min. typ. max. Unit Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 mΩ 6.3 6.9 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 5000 A/µs T = 150 °C j VGE = -15 V VR = 600 V Tj = 150 °C Rth(j-s) Diode2 VF = VEC Features IF = 200 A VGE = 15 V chiplevel chiplevel rF SKiM® 4 Conditions VF0 chiplevel rF chiplevel IRRM Qrr Err IF = 200 A VGE = 15 V chiplevel 1) VF = VEC VF0 rF IRRM Qrr Err chiplevel chiplevel 36.47 µC 14.53 mJ 0.36 K/W 2.20 2.50 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 mΩ 6.3 6.9 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 5000 A/µs T = 150 °C j VGE = -15 V VR = 600 V Tj = 150 °C IF = 200 A VGE = 15 V chiplevel A Tj = 25 °C Rth(j-s) Diode5 211 212 A 36.47 µC - mJ 0.36 K/W Tj = 25 °C 2.2 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 4.5 5.1 mΩ Tj = 150 °C 6.3 6.9 mΩ IF = 200 A Tj = 150 °C di/dtoff = 5700 A/µs T = 150 °C j VGE = -15 V VR = 600 V Tj = 150 °C Rth(j-s) 212 A 34.87 µC 15.79 mJ 0.55 K/W Footnote 1) Please find further technical information on the SEMIKRON website. MLI © by SEMIKRON Rev. 1.0 – 03.06.2015 3 SKiM201MLI12E4 Characteristics Symbol Conditions min. typ. max. Unit Module LsCE1 22 LsCE2 t.b.d. nH Ts = 25 °C 1.35 mΩ Ts = 125 °C 1.75 mΩ RCC'+EE' Ms terminal-chip to heat sink M5 to terminals M6 Mt SKiM® 4 nH 2 3 Nm 4 5 Nm Nm w Trench IGBT Modules SKiM201MLI12E4 317 g 493 ± 5% Ω 3550 ±2% K Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website Footnote 1) Please find further technical information on the SEMIKRON website. MLI 4 Rev. 1.0 – 03.06.2015 © by SEMIKRON SKiM201MLI12E4 Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE' Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Ts) Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic © by SEMIKRON Rev. 1.0 – 03.06.2015 5 SKiM201MLI12E4 Fig. 7: Typ. IGBT1 switching times vs. IC Fig. 8: Typ. IGBT1 switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT1 and Diode5 Fig. 10: Diode5 forward characteristic Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG) 6 Rev. 1.0 – 03.06.2015 © by SEMIKRON SKiM201MLI12E4 Fig. 19: Typ. IGBT2 switching times vs. IC Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG Fig. 21: Transient thermal impedance of IGBT2, Diode1 and Diode2 Fig. 22: Diode1 & Diode2 forward characteristic © by SEMIKRON Rev. 1.0 – 03.06.2015 7 SKiM201MLI12E4 SKiM 4 MLI This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 8 Rev. 1.0 – 03.06.2015 © by SEMIKRON