SKiM201MLI12E4 DataSheet

SKiM201MLI12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT1
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
206
A
Ts = 70 °C
166
A
200
A
ICnom
ICRM
VGES
SKiM® 4
tpsc
Trench IGBT Modules
Tj
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 1200 V
IC
Tj = 25 °C
ICRM
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
A
V
10
µs
-40 ... 175
°C
Tj = 175 °C
1200
V
Ts = 25 °C
206
A
Ts = 70 °C
166
A
200
A
600
A
-20 ... 20
V
10
µs
-40 ... 175
°C
ICnom
Features
600
-20 ... 20
IGBT2
VCES
SKiM201MLI12E4
ICRM = 3 x ICnom
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 1200 V
Diode1
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
187
A
Ts = 70 °C
148
A
200
A
IFnom
IFRM
IFRM = 3 x IFnom
600
A
IFSM
10 ms, sin 180°, Tj = 25 °C
990
A
-40 ... 175
°C
Tj
Diode2
Remarks*
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 … +150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• Please find further technical
information on the SEMIKRON website
Footnote
1)
Please find further technical information
on the SEMIKRON website.
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
187
A
Ts = 70 °C
148
A
200
A
IFnom
IFRM
IFRM = 3 x IFnom
600
A
IFSM
10 ms, sin 180°, Tj = 25 °C
990
A
-40 ... 175
°C
Tj
Diode5
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
141
A
Ts = 70 °C
111
A
200
A
IFnom
IFRM
IFRM = 3 x IFnom
600
A
IFSM
10 ms, sin 180°, Tj = 25 °C
990
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C,
Tstg
Visol
AC sinus 50 Hz, t = 1 min
400
A
-40 ... 125
°C
2500
V
MLI
© by SEMIKRON
Rev. 1.0 – 03.06.2015
1
SKiM201MLI12E4
Characteristics
Symbol
IGBT1
VCE(sat)
VCE0
SKiM® 4
Trench IGBT Modules
SKiM201MLI12E4
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Remarks*
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 … +150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• Please find further technical
information on the SEMIKRON website
1)
Please find further technical information
on the SEMIKRON website.
chiplevel
typ.
max.
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
5
5.8
mΩ
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE, IC = 7.6 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
- 15 V...+ 15 V
RGint
Tj = 25 °C
VCE = 600 V
IC = 200 A
VGE = +15/15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
di/dton = 5700 A/µs
di/dtoff = 2600 A/µs
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IGBT2
VCE(sat)
VCE0
rCE
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Cres
QG
- 15 V...+ 15 V
RGint
Tj = 25 °C
VCE = 600 V
IC = 200 A
VGE = +15/15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
di/dton = 4960 A/µs
di/dtoff = 1840 A/µs
td(on)
Eon
td(off)
tf
Eoff
Rth(j-s)
V
0.12
0.36
mA
nF
nF
f = 1 MHz
0.69
nF
1600
nC
3.8
Tj = 150 °C
Ω
182
ns
Tj = 150 °C
52
ns
Tj = 150 °C
14.81
mJ
Tj = 150 °C
446
ns
Tj = 150 °C
98
ns
Tj = 150 °C
22.6
mJ
0.29
K/W
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
5
5.8
mΩ
Tj = 150 °C
7.5
8
mΩ
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
mΩ
0.81
VGE = VCE, IC = 7.6 mA
Cies
8
6.5
f = 1 MHz
per IGBT
IC = 200 A
VGE = 15 V
chiplevel
7.5
5.8
12.3
ICES
Coes
5
f = 1 MHz
VGE(th)
tr
Footnote
IC = 200 A
VGE = 15 V
chiplevel
min.
rCE
td(on)
Features
Conditions
5
5.8
6.5
V
0.12
0.36
mA
f = 1 MHz
12.3
nF
f = 1 MHz
0.81
nF
f = 1 MHz
Tj = 150 °C
0.69
nF
1600
nC
3.8
Ω
184
ns
Tj = 150 °C
59
ns
Tj = 150 °C
7.33
mJ
Tj = 150 °C
457
ns
Tj = 150 °C
73
ns
Tj = 150 °C
23.87
mJ
0.29
K/W
per IGBT
MLI
2
Rev. 1.0 – 03.06.2015
© by SEMIKRON
SKiM201MLI12E4
Characteristics
Symbol
Diode1
VF = VEC
VF0
chiplevel
IRRM
Trench IGBT Modules
SKiM201MLI12E4
Qrr
Err
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Remarks*
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 … +150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• Please find further technical
information on the SEMIKRON website
min.
typ.
max.
Unit
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
4.5
5.1
mΩ
6.3
6.9
mΩ
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 5000 A/µs T = 150 °C
j
VGE = -15 V
VR = 600 V
Tj = 150 °C
Rth(j-s)
Diode2
VF = VEC
Features
IF = 200 A
VGE = 15 V
chiplevel
chiplevel
rF
SKiM® 4
Conditions
VF0
chiplevel
rF
chiplevel
IRRM
Qrr
Err
IF = 200 A
VGE = 15 V
chiplevel
1)
VF = VEC
VF0
rF
IRRM
Qrr
Err
chiplevel
chiplevel
36.47
µC
14.53
mJ
0.36
K/W
2.20
2.50
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
4.5
5.1
mΩ
6.3
6.9
mΩ
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 5000 A/µs T = 150 °C
j
VGE = -15 V
VR = 600 V
Tj = 150 °C
IF = 200 A
VGE = 15 V
chiplevel
A
Tj = 25 °C
Rth(j-s)
Diode5
211
212
A
36.47
µC
-
mJ
0.36
K/W
Tj = 25 °C
2.2
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
4.5
5.1
mΩ
Tj = 150 °C
6.3
6.9
mΩ
IF = 200 A
Tj = 150 °C
di/dtoff = 5700 A/µs T = 150 °C
j
VGE = -15 V
VR = 600 V
Tj = 150 °C
Rth(j-s)
212
A
34.87
µC
15.79
mJ
0.55
K/W
Footnote
1)
Please find further technical information
on the SEMIKRON website.
MLI
© by SEMIKRON
Rev. 1.0 – 03.06.2015
3
SKiM201MLI12E4
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Module
LsCE1
22
LsCE2
t.b.d.
nH
Ts = 25 °C
1.35
mΩ
Ts = 125 °C
1.75
mΩ
RCC'+EE'
Ms
terminal-chip
to heat sink M5
to terminals M6
Mt
SKiM® 4
nH
2
3
Nm
4
5
Nm
Nm
w
Trench IGBT Modules
SKiM201MLI12E4
317
g
493 ± 5%
Ω
3550
±2%
K
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Remarks*
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 … +150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
• Please find further technical
information on the SEMIKRON website
Footnote
1)
Please find further technical information
on the SEMIKRON website.
MLI
4
Rev. 1.0 – 03.06.2015
© by SEMIKRON
SKiM201MLI12E4
Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE'
Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Ts)
Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC)
Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG)
Fig. 5: Typ. IGBT1 transfer characteristic
Fig. 6: Typ. IGBT1 gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 03.06.2015
5
SKiM201MLI12E4
Fig. 7: Typ. IGBT1 switching times vs. IC
Fig. 8: Typ. IGBT1 switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT1 and
Diode5
Fig. 10: Diode5 forward characteristic
Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC)
Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG)
6
Rev. 1.0 – 03.06.2015
© by SEMIKRON
SKiM201MLI12E4
Fig. 19: Typ. IGBT2 switching times vs. IC
Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG
Fig. 21: Transient thermal impedance of IGBT2, Diode1
and Diode2
Fig. 22: Diode1 & Diode2 forward characteristic
© by SEMIKRON
Rev. 1.0 – 03.06.2015
7
SKiM201MLI12E4
SKiM 4
MLI
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
8
Rev. 1.0 – 03.06.2015
© by SEMIKRON