SEMiX305MLI07E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES IC Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 388 A Tc = 80 °C 293 A 300 A ICnom ICRM SEMiX® 5 3-Level NPC IGBT-Module VGES tpsc Tj VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤650 V IC Tj = 25 °C ICRM • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 A V 10 µs -40 ... 175 °C Tj = 175 °C 650 V Tc = 25 °C 373 A Tc = 80 °C 282 A 300 A 900 A -20 ... 20 V 10 µs -40 ... 175 °C ICnom Features 900 -20 ... +20 IGBT2 VCES SEMiX305MLI07E4 ICRM = 3 x ICnom VGES tpsc Tj ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V Diode1 VRRM IF Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 294 A Tc = 80 °C 217 A 200 A IFnom IFRM IFRM = 2 x IFnom 400 A IFSM 10 ms, sin 180°, Tj = 25 °C 1476 A -40 ... 175 °C Tj Diode2 VRRM IF Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 267 A Tc = 80 °C 196 A 200 A IFnom IFRM IFRM = 2 x IFnom 400 A IFSM 10 ms, sin 180°, Tj = 25 °C 1476 A -40 ... 175 °C Tj Diode5 VRRM IF Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 255 A Tc = 80 °C 187 A 200 A IFnom IFRM IFRM = 2xIFnom 400 A IFSM 10 ms, sin 180°, Tj = 25 °C 1476 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 400 A -40 ... 125 °C 4000 V MLI © by SEMIKRON Rev. 1.0 – 02.03.2016 1 SEMiX305MLI07E4 Characteristics Symbol IGBT1 VCE(sat) VCE0 SEMiX® 5 3-Level NPC IGBT-Module SEMiX305MLI07E4 • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 IC = 300 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.55 1.95 V Tj = 150 °C 1.75 2.15 V Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V Tj = 25 °C 2.2 3.2 mΩ 3.1 4.2 mΩ 5.8 6.4 V 0.2 mA rCE VGE = 15 V chiplevel VGE(th) VGE = VCE, IC = 8 mA ICES VGE = 0 V, VCE = 650 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V QG -15 V...+15 V RGint Tj = 25 °C VCC = 300 V IC = 300 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 4660 A/µs di/dtoff = 2600 A/µs td(on) Features Conditions tr Eon td(off) tf Eoff Tj = 150 °C 5.1 f = 1 MHz 18.5 nF f = 1 MHz 1.16 nF f = 1 MHz 0.55 nF 3023 nC 1.0 Tj = 150 °C Ω 55 ns Tj = 150 °C 67 ns Tj = 150 °C 2.5 mJ Tj = 150 °C 340 ns Tj = 150 °C 82 ns Tj = 150 °C 15.6 mJ Rth(j-c) per IGBT Rth(c-s) per IGBT (λgrease=0.81 W/(m*K)) 0.044 K/W Rth(c-s) per IGBT, pre-applied phase change material 0.031 K/W IGBT2 VCE(sat) VCE0 rCE IC = 300 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel 0.15 Tj = 25 °C 1.55 1.95 V Tj = 150 °C 1.75 2.15 V Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V Tj = 25 °C 2.2 3.2 mΩ Tj = 150 °C 3.1 4.2 mΩ 5.8 6.4 V 0.2 mA VGE(th) VGE = VCE, IC = 8 mA ICES VGE = 0 V, VCE = 650 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V QG -15 V...+15 V RGint Tj = 25 °C VCC = 300 V IC = 300 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 4010 A/µs di/dtoff = 2210 A/µs td(on) tr Eon td(off) tf Eoff K/W 5.1 f = 1 MHz 18.5 nF f = 1 MHz 1.16 nF f = 1 MHz 0.55 nF 3023 nC 1.0 Tj = 150 °C Ω 75 ns Tj = 150 °C 71 ns Tj = 150 °C 3 mJ Tj = 150 °C 334 ns Tj = 150 °C 122 ns Tj = 150 °C 13 mJ Rth(j-c) per IGBT Rth(c-s) per IGBT (λgrease=0.81 W/(m*K)) 0.05 K/W Rth(c-s) per IGBT, pre-applied phase change material 0.035 K/W 0.16 K/W MLI 2 Rev. 1.0 – 02.03.2016 © by SEMIKRON SEMiX305MLI07E4 Characteristics Symbol Diode1 VF = VEC VF0 rF SEMiX® 5 3-Level NPC IGBT-Module SEMiX305MLI07E4 Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 Conditions IF = 200 A VGE = 0 V chiplevel chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.38 1.77 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 1.78 2.6 mΩ 2.7 3.9 mΩ Err Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 4010 A/µs T = 150 °C j VCC = 300 V VGE = +15/-15 V Tj = 150 °C Rth(j-c) per diode Rth(c-s) per Diode (λgrease=0.81 W/(m*K)) 0.044 K/W Rth(c-s) per Diode, pre-applied phase change material 0.043 K/W IRRM Qrr Diode2 VF = VEC VF0 rF IF = 200 A VGE = 0 V chiplevel chiplevel chiplevel 190.5 A 20.2 µC 7.71 mJ 0.25 K/W Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.38 1.77 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 1.78 2.6 mΩ 2.7 3.9 mΩ Err Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 4900 A/µs T = 150 °C j VR = 300 V VGE = +15/-15 V Tj = 150 °C Rth(j-c) per diode Rth(c-s) per Diode (λgrease=0.81 W/(m*K)) 0.044 K/W Rth(c-s) per Diode, pre-applied phase change material 0.039 K/W IF = 200 A Tj = 25 °C 1.40 1.76 V chiplevel Tj = 150 °C 1.38 1.77 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 1.78 2.6 mΩ 2.7 3.9 mΩ IRRM Qrr Diode5 VF = VEC VF0 rF chiplevel chiplevel Err Rth(j-c) per diode Qrr A 20.2 µC - mJ 0.29 Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 4660 A/µs T = 150 °C j VR = 300 V VGE = +15/-15 V Tj = 150 °C IRRM 190.5 K/W 265 A 35 µC 4.3 mJ 0.31 K/W Rth(c-s) 0.055 K/W Rth(c-s) 0.049 K/W MLI © by SEMIKRON Rev. 1.0 – 02.03.2016 3 SEMiX305MLI07E4 Characteristics Symbol Conditions min. typ. max. Unit Module LsCE1 29 LsCE2 38 nH 0.8 mΩ 1.1 mΩ 0.005 K/W 0.008 K/W 0.006 K/W RCC'+EE' Rth(c-s)1 SEMiX® 5 3-Level NPC IGBT-Module SEMiX305MLI07E4 Rth(c-s)2 Rth(c-s)2 Ms measured TC = 25 °C between terminal 5 TC = 125 °C and 1 calculated without thermal coupling including thermal coupling, Ts underneath module (λgrease=0.81 W/ (m*K)) including thermal coupling, Ts underneath module, pre-applied phase change material to heat sink (M5) to terminals (M6) Mt nH 3 6 Nm 3 6 Nm Nm w Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside 398 g 493 ± 5% Ω 3550 ±2% K Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; Remarks* • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 MLI 4 Rev. 1.0 – 02.03.2016 © by SEMIKRON SEMiX305MLI07E4 Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE' Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Tc) Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic © by SEMIKRON Rev. 1.0 – 02.03.2016 5 SEMiX305MLI07E4 Fig. 7: Typ. IGBT1 switching times vs. IC Fig. 8: Typ. IGBT1 switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT1 & Diode5 Fig. 10: Typ. Diode5 forward characteristic, incl. RCC'+ EE' Fig. 13: Typ. IGBT2 output characteristic, incl. RCC'+ EE' Fig. 14: IGBT2 Rated current vs. Temperature Ic= f (Tc) 6 Rev. 1.0 – 02.03.2016 © by SEMIKRON SEMiX305MLI07E4 Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG) Fig. 17: Typ. IGBT2 transfer characteristic Fig. 18: Typ. IGBT2 gate charge characteristic Fig. 19: Typ. IGBT2 switching times vs. IC Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG © by SEMIKRON Rev. 1.0 – 02.03.2016 7 SEMiX305MLI07E4 Fig. 21: Transient thermal impedance of IGBT2, Diode1 & Diode2 8 Fig. 22: Typ. Diode1 & Diode2 forward characteristic, incl. RCC'+ EE' Rev. 1.0 – 02.03.2016 © by SEMIKRON SEMiX305MLI07E4 SEMiX5p MLI © by SEMIKRON Rev. 1.0 – 02.03.2016 9 SEMiX305MLI07E4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. 10 Rev. 1.0 – 02.03.2016 © by SEMIKRON