SKiM201MLI12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES IC Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 206 A Ts = 70 °C 166 A 200 A ICnom ICRM VGES SKiM® 4 tpsc Trench IGBT Modules Tj VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V IC Tj = 25 °C ICRM • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor A V 10 µs -40 ... 175 °C Tj = 175 °C 1200 V Ts = 25 °C 206 A Ts = 70 °C 166 A 200 A 600 A -20 ... 20 V 10 µs -40 ... 175 °C ICnom Features 600 -20 ... 20 IGBT2 VCES SKiM201MLI12E4 ICRM = 3 x ICnom VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V Diode1 VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 187 A Ts = 70 °C 148 A 200 A IFnom IFRM IFRM = 3 x IFnom 600 A IFSM 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Diode2 Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 187 A Ts = 70 °C 148 A 200 A IFnom IFRM IFRM = 3 x IFnom 600 A IFSM 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Diode5 VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 141 A Ts = 70 °C 111 A 200 A IFnom IFRM IFRM = 3 x IFnom 600 A IFSM 10 ms, sin 180°, Tj = 25 °C 990 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min 400 A -40 ... 125 °C 2500 V MLI © by SEMIKRON Rev. 2.0 – 25.03.2016 1 SKiM201MLI12E4 Characteristics Symbol IGBT1 VCE(sat) VCE0 SKiM® 4 Trench IGBT Modules SKiM201MLI12E4 • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website IC = 200 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.80 0.90 V Tj = 150 °C 0.70 0.80 V Tj = 25 °C 5.0 5.8 mΩ 7.5 8.0 mΩ 5.8 6.5 V 2.7 mA rCE VGE = 15 V chiplevel VGE(th) VGE = VCE, IC = 7.6 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V QG - 15 V...+ 15 V RGint Tj = 25 °C VCE = 600 V IC = 200 A VGE = +15/15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 5700 A/µs di/dtoff = 2600 A/µs td(on) Features Conditions tr Eon td(off) tf Eoff Rth(j-s) IGBT2 VCE(sat) VCE0 rCE Tj = 150 °C f = 1 MHz 12.3 nF f = 1 MHz 0.81 nF f = 1 MHz 0.69 nF 1600 nC 3.8 Tj = 150 °C Ω 182 ns Tj = 150 °C 52 ns Tj = 150 °C 14.81 mJ Tj = 150 °C 446 ns Tj = 150 °C 98 ns Tj = 150 °C 22.6 mJ 0.29 K/W per IGBT IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.80 0.90 V Tj = 150 °C 0.70 0.80 V Tj = 25 °C 5.0 5.8 mΩ Tj = 150 °C 7.5 8.0 mΩ 5.8 6.5 V 2.7 mA VGE(th) VGE = VCE, IC = 7.6 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V QG - 15 V...+ 15 V RGint Tj = 25 °C VCE = 600 V IC = 200 A VGE = +15/15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 4960 A/µs di/dtoff = 1840 A/µs td(on) tr Eon td(off) tf Eoff Rth(j-s) 5 5 f = 1 MHz 12.3 nF f = 1 MHz 0.81 nF f = 1 MHz Tj = 150 °C 0.69 nF 1600 nC 3.8 Ω 184 ns Tj = 150 °C 59 ns Tj = 150 °C 7.33 mJ Tj = 150 °C 457 ns Tj = 150 °C 73 ns Tj = 150 °C 23.87 mJ 0.29 K/W per IGBT MLI 2 Rev. 2.0 – 25.03.2016 © by SEMIKRON SKiM201MLI12E4 Characteristics Symbol Diode1 VF = VEC VF0 Trench IGBT Modules SKiM201MLI12E4 Qrr Err VF = VEC Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website VF0 2.52 V chiplevel 2.15 2.47 V Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 25 °C 4.5 5.1 mΩ 6.3 6.9 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 5000 A/µs T = 150 °C j VR = 600 V VGE = +15/15 V Tj = 150 °C Qrr Err 1) VF = VEC VF0 rF IRRM Qrr Err A 36.47 µC 14.53 mJ 0.36 K/W Tj = 25 °C 2.20 2.52 V chiplevel Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 25 °C 4.5 5.1 mΩ 6.3 6.9 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 5000 A/µs T = 150 °C j VR = 600 V VGE = +15/15 V Tj = 150 °C Rth(j-s) Diode5 211 IF = 200 A chiplevel IRRM Unit 2.20 chiplevel rF max. Tj = 150 °C Rth(j-s) Diode2 typ. Tj = 25 °C chiplevel IRRM min. IF = 200 A chiplevel rF SKiM® 4 Conditions 212 A 36.47 µC - mJ 0.36 K/W IF = 200 A Tj = 25 °C 2.20 2.52 V chiplevel Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 25 °C 4.5 5.1 mΩ Tj = 150 °C 6.3 6.9 mΩ chiplevel chiplevel IF = 200 A Tj = 150 °C di/dtoff = 5700 A/µs T = 150 °C j VR = 600 V VGE = +15/15 V Tj = 150 °C Rth(j-s) 212 A 34.87 µC 15.79 mJ 0.55 K/W MLI © by SEMIKRON Rev. 2.0 – 25.03.2016 3 SKiM201MLI12E4 Characteristics Symbol Conditions min. typ. max. Unit Module LsCE1 22 LsCE2 t.b.d. nH Ts = 25 °C 1.35 mΩ Ts = 125 °C 1.75 mΩ RCC'+EE' Ms measured per switch to heat sink M5 to terminals M6 Mt SKiM® 4 nH 2 3 Nm 4 5 Nm Nm w Trench IGBT Modules SKiM201MLI12E4 317 g 493 ± 5% Ω 3550 ±2% K Temperature Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Tjop = -40 … +150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • Please find further technical information on the SEMIKRON website MLI 4 Rev. 2.0 – 25.03.2016 © by SEMIKRON SKiM201MLI12E4 Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE' Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Ts) Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic © by SEMIKRON Rev. 2.0 – 25.03.2016 5 SKiM201MLI12E4 Fig. 7: Typ. IGBT1 switching times vs. IC Fig. 8: Typ. IGBT1 switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT1 & Diode5 Fig. 10: Diode5 forward characteristic Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG) 6 Rev. 2.0 – 25.03.2016 © by SEMIKRON SKiM201MLI12E4 Fig. 19: Typ. IGBT2 switching times vs. IC Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG Fig. 21: Transient thermal impedance of IGBT2, Diode1 & Diode2 Fig. 22: Diode1 & Diode2 forward characteristic © by SEMIKRON Rev. 2.0 – 25.03.2016 7 SKiM201MLI12E4 SKiM 4 MLI 8 Rev. 2.0 – 25.03.2016 © by SEMIKRON SKiM201MLI12E4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. © by SEMIKRON Rev. 2.0 – 25.03.2016 9