SKiM301MLI12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT1
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
311
A
Ts = 70 °C
252
A
300
A
ICnom
ICRM
VGES
SKiM® 4
tpsc
Trench IGBT Modules
Tj
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 1200 V
IC
Tj = 25 °C
ICRM
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications
• UPS
• 3 Level Inverter
VGES
tpsc
Tj
10
µs
-40 ... 175
°C
Tj = 175 °C
1200
V
311
A
Ts = 70 °C
252
A
300
A
900
A
-20 ... 20
V
10
µs
-40 ... 175
°C
ICRM = 3 x ICnom
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 1200 V
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
282
A
Ts = 70 °C
223
A
300
A
IFnom
IFRM
IFRM = 3 x IFnom
900
A
IFSM
10 ms, sin 180°, Tj = 25 °C
1485
A
-40 ... 175
°C
Tj
Diode2
VRRM
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
282
A
Ts = 70 °C
223
A
300
A
IFnom
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 ...+150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
V
Diode1
IF
Remarks*
A
Ts = 25 °C
ICnom
Features
900
-20 ... 20
IGBT2
VCES
SKiM301MLI12E4
ICRM = 3 x ICnom
IFRM
IFRM = 3 x IFnom
900
A
IFSM
10 ms, sin 180°, Tj = 25 °C
1485
A
-40 ... 175
°C
Tj
Diode5
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
219
A
Ts = 70 °C
172
A
300
A
IFnom
IFRM
IFRM = 3 x IFnom
900
A
IFSM
10 ms, sin 180°, Tj = 25 °C
1620
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
400
A
-40 ... 125
°C
2500
V
MLI
© by SEMIKRON
Rev. 4.0 – 10.06.2016
1
SKiM301MLI12E4
Characteristics
Symbol
IGBT1
VCE(sat)
VCE0
SKiM® 4
Trench IGBT Modules
SKiM301MLI12E4
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications
• UPS
• 3 Level Inverter
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 ...+150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
chiplevel
typ.
max.
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
3.3
3.8
mΩ
5.0
5.3
mΩ
5.8
6.5
V
4
mA
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE, IC = 11.4 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
18.45
nF
f = 1 MHz
1.215
nF
f = 1 MHz
1.035
nF
2400
nC
VGE = - 15 V...+ 15 V
RGint
Tj = 25 °C
VCE = 600 V
IC = 300 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
di/dton = 5700 A/µs
di/dtoff = 2600 A/µs
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IGBT2
VCE(sat)
VCE0
rCE
2.5
Tj = 150 °C
Ω
182
ns
Tj = 150 °C
52
ns
Tj = 150 °C
22.2
mJ
Tj = 150 °C
446
ns
Tj = 150 °C
98
ns
Tj = 150 °C
33.9
mJ
0.19
K/W
per IGBT
IC = 300 A
VGE = 15 V
chiplevel
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
3.3
3.8
mΩ
Tj = 150 °C
5.0
5.3
mΩ
5.8
6.5
V
4
mA
VGE(th)
VGE = VCE, IC = 11.4 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Coes
Cres
VCE = 25 V
VGE = 0 V
18.45
nF
f = 1 MHz
1.215
nF
f = 1 MHz
1.035
nF
2400
nC
VGE = - 15 V...+ 15 V
RGint
Tj = 25 °C
VCE = 600 V
IC = 300 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
di/dton = 4960 A/µs
di/dtoff = 1840 A/µs
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
5
f = 1 MHz
QG
td(on)
5
f = 1 MHz
QG
Cies
Remarks*
IC = 300 A
VGE = 15 V
chiplevel
min.
rCE
td(on)
Features
Conditions
2.5
Tj = 150 °C
Ω
184
ns
Tj = 150 °C
59
ns
Tj = 150 °C
11
mJ
Tj = 150 °C
457
ns
Tj = 150 °C
73
ns
Tj = 150 °C
35.8
mJ
0.19
K/W
per IGBT
MLI
2
Rev. 4.0 – 10.06.2016
© by SEMIKRON
SKiM301MLI12E4
Characteristics
Symbol
Diode1
VF = VEC
VF0
rF
SKiM® 4
IRRM
Trench IGBT Modules
SKiM301MLI12E4
Qrr
Err
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications
• UPS
• 3 Level Inverter
VF0
rF
IRRM
Qrr
Err
Diode5
VF = VEC
VF0
IRRM
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 ...+150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
Qrr
Err
typ.
max.
Unit
IF = 300 A
Tj = 25 °C
2.20
2.52
V
chiplevel
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
3.0
3.4
mΩ
4.2
4.6
mΩ
chiplevel
chiplevel
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 5000 A/µs T = 150 °C
j
VR = 600 V
VGE = +15/-15 V
Tj = 150 °C
320
A
54.7
µC
21.8
mJ
0.24
K/W
IF = 300 A
Tj = 25 °C
2.20
2.52
V
chiplevel
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
3.0
3.4
mΩ
4.2
4.6
mΩ
chiplevel
chiplevel
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 5000 A/µs T = 150 °C
j
VR = 600 V
VGE = +15/-15 V
Tj = 150 °C
Rth(j-s)
rF
Remarks*
min.
Rth(j-s)
Diode2
VF = VEC
Features
Conditions
320
A
54.7
µC
-
mJ
0.24
K/W
IF = 300 A
Tj = 25 °C
2.14
2.46
V
chiplevel
Tj = 150 °C
2.07
2.38
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
2.8
3.2
mΩ
Tj = 150 °C
3.9
4.3
mΩ
chiplevel
chiplevel
IF = 300 A
Tj = 150 °C
di/dtoff = 5700 A/µs T = 150 °C
j
VR = 600 V
VGE = +15/-15 V
Tj = 150 °C
Rth(j-s)
322
A
53
µC
24
mJ
0.36
K/W
MLI
© by SEMIKRON
Rev. 4.0 – 10.06.2016
3
SKiM301MLI12E4
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Module
LsCE1
32
LsCE2
25
nH
0.4
mΩ
0.6
mΩ
RCC'+EE'
Ms
measured
Ts = 25 °C
between terminal 4
Ts = 125 °C
and 24
to heat sink M5
to terminals M6
Mt
SKiM® 4
nH
2
3
Nm
4
5
Nm
Nm
w
Trench IGBT Modules
SKiM301MLI12E4
317
g
493 ± 5%
Ω
3550
±2%
K
Temperature Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications
• UPS
• 3 Level Inverter
Remarks*
• Case temperature limited to Ts = 125°C
max; Tc = Ts (for baseplateless
modules)
• Recommended Tjop = -40 ...+150°C
• IGBT1 : outer IGBTs T1 & T4
• IGBT2 : inner IGBTs T2 & T3
• Diode1 : outer diodes D1 & D4
• Diode2 : inner diodes D2 & D3
• Diode5 : clamping diodes D5 & D6
MLI
4
Rev. 4.0 – 10.06.2016
© by SEMIKRON
SKiM301MLI12E4
Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE'
Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Ts)
Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC)
Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG)
Fig. 5: Typ. IGBT1 transfer characteristic
Fig. 6: Typ. IGBT1 gate charge characteristic
© by SEMIKRON
Rev. 4.0 – 10.06.2016
5
SKiM301MLI12E4
Fig. 7: Typ. IGBT1 switching times vs. IC
Fig. 8: Typ. IGBT1 switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT1 & Diode5
Fig. 10: Typ. Diode5 forward characteristic, incl. RCC'+ EE'
Fig. 13: Typ. IGBT2 output characteristic, incl. RCC'+ EE'
Fig. 14: IGBT2 Rated current vs. Temperature Ic= f (Ts)
6
Rev. 4.0 – 10.06.2016
© by SEMIKRON
SKiM301MLI12E4
Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC)
Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG)
Fig. 17: Typ. IGBT2 transfer characteristic
Fig. 18: Typ. IGBT2 gate charge characteristic
Fig. 19: Typ. IGBT2 switching times vs. IC
Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG
© by SEMIKRON
Rev. 4.0 – 10.06.2016
7
SKiM301MLI12E4
Fig. 21: Transient thermal impedance of IGBT2, Diode1
& Diode2
8
Fig. 22: Typ. Diode1 & Diode2 forward characteristic,
incl. RCC'+ EE'
Rev. 4.0 – 10.06.2016
© by SEMIKRON
SKiM301MLI12E4
SKiM 4
MLI
© by SEMIKRON
Rev. 4.0 – 10.06.2016
9
SKiM301MLI12E4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
10
Rev. 4.0 – 10.06.2016
© by SEMIKRON