10-PZ12B2A045MR-M330L18Y Maximum Ratings

10-PZ12B2A045MR-M330L18Y
target datasheet
flowSOL0-SiC
1200V / 45mΩ
Features
● Rohm
TM
flow0 12mm housing
Silicon Carbide Power MOSFET
TM
● Rohm Silicon Carbide Power Schottky Diode
● Dual Boost Topology
● Ultra Low Inductance with Integrated DC-capacitors
● Extremely Fast Switching with No "Tail" Current
● Solderless Press-fit Mounting Technology
Schematic
Target Applications
● Solar Inverter
● UPS
● DC-DC
Types
● 10-PZ12B2A045MR-M330L18Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
32
A
Boost - Silicon Carbide Power MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
VDS
ID
IDpulse
Power dissipation
Ptot
Gate-source peak voltage
Maximum junction temperature
Tj=Tjmax
Th=80°C
tp limited by Tjmax
Tc=25°C
Tj=Tjmax
Th=80°C
A
50
W
VGS
+22
-6
V
Tjmax
150
°C
VRRM
1600
V
30
A
90
A
42
W
150
°C
Protection Diode
Peak repetitive reverse voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per diode
Ptot
Tj=Tjmax
Maximum junction temperature
copyright Vincotech
Tjmax
1
Th=80°C
Th=80°C
Revision: 2
10-PZ12B2A045MR-M330L18Y
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
40
A
Boost - Silicon Carbide Power Schottky Diode
Peak repetitive reverse voltage
DC forward current
VRRM
IF
Tj=Tjmax
Th=80°C
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per diode
Ptot
Tj=Tjmax
A
Th=80°C
70
W
Tjmax
150
°C
Storage temperature
Tstg
-40...+150
°C
Operation temperature under switching condition
Top
-40...(Tjmax-25)
°C
4000
V
Creepage distance
12.7
mm
Clearance
12.7
mm
Maximum junction temperature
Thermal Properties
Insulation Properties
Insulation voltage
copyright Vincotech
Vis
t=2s
DC voltage
2
Revision: 2
10-PZ12B2A045MR-M330L18Y
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Unit
Typ
Max
45
65
60
85
3.7
Boost - Silicon Carbide Power MOSFET
Static drain-source ON resistance
Rds(on)
Gate threshold voltage
V(GS)th
Gate to source leakage current
Zero gate voltage drain current
18
20
VDS=VGS
0.0088
Igss
22
-6
0
Idss
0
1200
td(ON)
Turn on delay time
tr
Rise time
td(OFF)
Turn off delay time
tf
Fall time
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
Rgon=8Ω
Rgoff=8Ω
16
700
40
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.7
0.2
-0.2
0.02
mΩ
V
μA
mA
35
34
ns
200
21
1.04
mWs
1
nC
Tj=25°C
4400
f=1MHz
0
Tj=25°C
25
pF
800
100
Thermal foil
thickness=76um
Kunze KU-ALF5
1.4
K/W
N/A
Protection Diode
VF
Diode forward voltage
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
30
Tj=25°C
Tj=125°C
1
Thermal foil
thickness=76um
Kunze KU-ALF5
1.15
1.11
1.6
V
1.7
K/W
N/A
Boost - Silicon Carbide Power Schottky Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
VF
40
Ir
1200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.5
1.9
40
320
1.7
800
V
μA
IRRM
A
trr
ns
Qrr
μC
di(rec)max
/dt
A/μs
Erec
mWs
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
Thermal foil
thickness=76um
Kunze KU-ALF5
1
K/W
N/A
DC link Capacitor
Capacitance
C
Tj=25°C
80
100
120
nF
20.9
644
22
750
23.1
872
kΩ
Ω
Thermistor
Rated resistance
R25
R125
Tj=25°C
Tj=125°C
Operating current
I
Tj=25°C
0.3
mA
P
Tj=25°C
200
mW
B(25/50)
Tj=25°C
Power dissipation
B-value
copyright Vincotech
3
3950
K
Revision: 2
10-PZ12B2A045MR-M330L18Y
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 12mm housing
Ordering Code
10-PZ12B2A045MR-M330L18Y
in DataMatrix as
M330L18Y
in packaging barcode as
M330L18Y
Outline
Pinout
copyright Vincotech
4
Revision: 2