10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet flowNPC 0 600V/75A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability ● SiC buck diode ● low inductance layout Target Applications Schematic ● Solar ● UPS Types ● 10-FZ06NRA084FP02-P969F68 ● 10-PZ06NRA084FP02-P969F68Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 57 76 A 225 A 112 169 W ±20 V 9 360 µs V 175 °C 600 V Buck IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj≤125°C VGE=15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Tj=Tjmax Th=80°C Tc=80°C 19 25 A Repetitive peak forward current IFRM tp limited by Tjmax Tc=100°C 99 A Power dissipation per Diode Ptot Tj=Tjmax Th=80°C Tc=80°C 37 56 W 150 °C Maximum Junction Temperature copyright Vincotech Tjmax 1 Revision: 1 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V Tc=80°C 15 19 A tp limited by Tjmax Tc=25°C 112 A Tj=Tjmax Th=80°C Tc=80°C 62 93 W Buck MOSFET Drain to source breakdown voltage DC drain current Pulsed drain current VDS ID IDpulse Tj=Tjmax Th=80°C Power dissipation Ptot Gate-source peak voltage Vgs ±20 V Tjmax 150 °C VCE 600 V 50 50 A 225 A 85 129 W ±20 V 6 360 µs V 175 °C 600 V Maximum Junction Temperature Boost IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current IC ICpuls Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings Maximum Junction Temperature tSC VCC Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj≤150°C VGE=15V Tjmax Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current Power dissipation per Diode Maximum Junction Temperature VRRM Tc=25°C IF Tj=Tjmax Ptot Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C Tjmax 16 20 32 49 A W 175 °C 1200 V 20 28 A 70 A 34 52 W 150 °C Boost Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature copyright Vincotech Tjmax 2 Th=80°C Tc=80°C Th=80°C Tc=80°C Revision: 1 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage copyright Vincotech Vis t=2s DC voltage 3 Revision: 1 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 3,5 4,5 6 1,9 2,1 2,5 Buck IGBT * VCE=VGE Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint None Ω Input capacitance Cies 4000 nF Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH f=1MHz 0,00025 75 0 0,25 400 Tj=25°C 30 V V mA nA 400 pF 115 ±15 400 75 Tj=25°C Thermal grease thickness≤50um λ = 1 W/mK 94 nC 0,85 K/W * see dynamic characteristic at Buck MosFET **additional value stands for built-in capacitor Buck Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance chip to heatsink per chip 24 diF/dt=tbd A/us ±15 300 75 di(rec)max /dt Erec RthJH Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,50 1,82 1,7 A tbd ns tbd µC tbd A/µs tbd mWs tbd Thermal grease thickness≤50um λ = 1 W/mK V 1,91 K/W Buck MOSFET Static drain to source ON resistance Gate threshold voltage Rds(on) V(GS)th 10 18 VDS=VGS 0,0012 Gate to Source Leakage Current Igss 20 0 Zero Gate Voltage Drain Current Idss 0 600 Turn On Delay Time Rise Time Turn off delay time Fall time td(ON) tr td(OFF) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd Input capacitance Ciss Output capacitance Coss Thermal resistance chip to heatsink per chip RthJH Rgon=X Ω Rgoff=X Ω ±15 300 75 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 90 2,4 3 mΩ 3,5 100 5000 tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. V nA uA ns mWs 119 10 480 18 Tj=25°C 14 nC 61 2660 f=1MHz 0 25 Tj=25°C pF 154 Thermal grease thickness≤50um λ = 1 W/mK 1,29 K/W ** see schematic of the Gate-complex at characteristic figures copyright Vincotech 4 Revision: 1 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5,8 6,5 1 1,28 1,31 1,9 Boost IGBT Gate emitter threshold voltage VGE(th) VCE=VGE 0,0012 Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off incl diode ICES 0 600 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time 45 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH 0,0038 600 Rgon=X Ω Rgoff=X Ω ±15 300 75 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C V V mA nA Ω none tr td(off) Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. ns mWs 4620 f=1MHz 0 Tj=25°C 25 pF 288 137 Tj=25°C Thermal grease thickness≤50um λ = 1 W/mK 470 nC 1,11 K/W Boost Inverse Diode Diode forward voltage Thermal resistance chip to heatsink per chip VF RthJH 20 Tj=25°C Tj=125°C 1,25 Thermal grease thickness≤50um λ = 1 W/mK 1,68 1,63 1,95 2,94 V K/W Boost Diode Diode forward voltage Reverse leakage current Peak reverse recovery current VF Ir Reverse recovery time trr Qrr Reverse recovery energy Thermal resistance chip to heatsink per chip 1200 IRRM Reverse recovered charge Peak rate of fall of recovery current 30 Rgon=X Ω 350 di(rec)max /dt Erec RthJH 40 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,5 2,44 2,01 3,5 100 tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. tbd. Thermal grease thickness≤50um λ = 1 W/mK V µA A ns µC A/µs mWs 2,04 K/W 22 KΩ Thermistor Rated resistance R Deviation of R100 ∆R/R Power dissipation P Tj=25°C R100=1486 Ω Tc=100°C Power dissipation constant Tj=25°C 3,5 mW/K 4000 K B(25/50) Tol. ±3% Tj=25°C B(25/100) Tol. ±3% Tj=25°C Tj=25°C 5 % mW B-value copyright Vincotech 5 210 B-value Vincotech PTC Reference -5 Tc=100°C K A Revision: 1 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version without thermal paste 12mm housing without thermal paste 12mm Press-fit housing Ordering Code 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F69Y in DataMatrix as in packaging barcode as P969F68 P969F68Y P969F68 P969F68Y Outline P969-F68 P969-F68Y Pinout copyright Vincotech 6 Revision: 1 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 7 Revision: 1