10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm™ Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current ● Unsensitivity for Cross Through Conduction ● Solderless Press-fit Mounting Technology ● Temperature sensor Schematic Target Applications ● High Efficient Solar Inverter ● UPS Types ● 10-PZ12NMA027MR-M340F68Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 40 A 240 A 85 W T1, T4 H-bridge MOSFET Drain-source break down voltage DC drain current Pulsed drain current VDSS ID IDpulse Tj=Tjmax Th=80°C tp limited by Tjmax Power dissipation Ptot Gate-source peak voltage VGS -6 / 22 V Tjmax 150 °C VRRM 650 V 28 A 120 A 63 W 175 °C Maximum Junction Temperature Tj=Tjmax Th=80°C D7, D8 Neutral Point FWD Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature copyright by Vincotech Tjmax 1 Th=80°C Th=80°C Revision: 1 10-PZ12NMA027MR-M340F68Y targat datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 50 A 240 A 76 W ±20 V none µs V 160 A T2, T3 Neutral Point IGBT Collector-emitter break down voltage DC collector current VCE IC Tj=Tjmax Th=80°C Repetitive peak collector current ICpuls tp limited by Tjmax Power dissipation per IGBT Ptot Tj=Tjmax Gate-emitter peak voltage VGE Short circuit ratings tSC Tj≤150°C VCC VGE=15V Th=80°C Tj≤150°C Reverse Bias Safe Operation Area Icmax Maximum Junction Temperature Tjmax 175 °C VRRM 650 V 11 A 12 A 21 W Tjmax 175 °C VRRM 1200 V 14 A 46 A 38 W 175 °C 500 V VCEmax=650V D2,D3 Neutral Point IGBT Inverse Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Th=80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C D5, D6 H-bridge FWD Peak Repetitive Reverse Voltage DC forward current IF Th=80°C Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tjmax DC link Capacitor Max.DC voltage VMAX Tc=25°C Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Insulation Properties Insulation voltage Vis Comparative tracking index CTI copyright by Vincotech t=2s DC voltage >200 2 Revision: 1 10-PZ12NMA027MR-M340F68Y targat datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Typ Unit Max T1, T4 H-bridge MOSFET Drain-source on-state resistance Rds(on) VCE=VGE Gate threshold voltage V(GS)th VDS=VGS 18 30 0,0132 Gate to Source Leackage Current IGSS+ IGSS- -6/22 0 Zero Gate Voltage Drain Current IDSS 0 1200 Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Total gate charge * Qg Gate to source charge Qgs Rgoff=tbd Ω Rgon=tbd Ω 18 400 30 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C 27,00 42,00 1,6 300 30 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd nC 93 6240 Output capacitance Coss Reverse transfer capacitance Crss Internal Gate Resistance RG RthJH mWs nC Qgd Thermal resistance chip to heatsink per chip ns nC Cies 800 µA 81 Input capacitance * 0 V nA 318 Gate to drain charge f=1MHz mΩ 4 pF Tj=25°C 231 Tj=25°C 2,1 Ω 0,8 K/W 48 f=1MHz UAC=25mV Preaplied Phase change material D7, D8 Neutral Point FWD Diode forward voltage Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current VF IRRM trr Qrr Rgon=tbdΩ di(rec)max /dt Reverse recovered energy Erec Thermal resistance chip to heatsink per chip RthJH copyright by Vincotech 30 Preaplied Phase change material Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,40 1,60 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd 1,50 3 V A ns µC A/µs mWs K/W Revision: 1 10-PZ12NMA027MR-M340F68Y targat datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=125°C Tj=25°C Tj=150°C Tj=25°C Tj=175°C Tj=25°C Tj=125°C 3,3 4,0 4,7 1,65 2,22 T2, T3 Neutral Point IGBT Gate emitter threshold voltage VGE(th) VCE=VGE 0,0008 Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off incl diode ICES 0 650 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time 80 tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH 240 none Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C tr td(off) 0,08 Rgoff=tbdΩ Rgon=tbdΩ V V mA nA Ω tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd ns mWs 5000 f=1MHz 0 25 15 520 Tj=25°C 80 Tj=25°C 190 nC 1,25 K/W pF 18 80 Preaplied Phase change material D2,D3 Neutral Point IGBT Inverse Diode Diode forward voltage Thermal resistance chip to heatsink per chip VF RthJH 6 Tj=25°C Tj=125°C 1,23 Preaplied Phase change material 1,55 1,50 2,1 V K/W 3,70 D5, D6 H-bridge FWD Diode forward voltage Reverse leakage current Peak reverse recovery current VF Ir 1200 IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current 10 Rgon=tbd Ω di(rec)max /dt Reverse recovery energy Erec Thermal resistance chip to heatsink per chip RthJH Tj=25°C Tj=150°C Tj=25°C Tj=175°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 1 1,49 1,77 1,9 250 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd Preaplied Phase change material V µA A ns µC A/µs mWs 2,50 K/W 270 nF 22000 Ω DC link Capacitor C value C Thermistor Rated resistance R Deviation of R100 ∆R/R Power dissipation P T=25°C R100=1486 Ω T=25°C Power dissipation constant -5 +5 % T=25°C 200 mW Tj=25°C 2 mW/K B-value B(25/50) Tol. ±3% Tj=25°C 3950 K B-value B(25/100) Tol. ±3% Tj=25°C 3996 K Vincotech NTC Reference copyright by Vincotech B 4 Revision: 1 10-PZ12NMA027MR-M340F68Y targat datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version without thermal paste 12mm housing Ordering Code 10-PZ12NMA027MR-M340F68Y in DataMatrix as M340F68Y in packaging barcode as M340F68Y Outline Pinout copyright by Vincotech 5 Revision: 1 10-PZ12NMA027MR-M340F68Y targat datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by Vincotech 6 Revision: 1