ROHM SH8J66

4V Drive Pch+Pch MOSFET
SH8J66
Dimensions (Unit : mm)
Structure
Silicon P-channel MOSFET
SOP8
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Applications
Switching
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
Taping
(8)
(7)
(6)
(5)
TB
Code
Basic ordering unit (pieces)
2500
SH8J66
∗2
∗2
Absolute maximum ratings (Ta=25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
(1)
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
∗1
PD
Tch
Tstg
∗2
Limits
−30
±20
±9
±36
−1.6
−36
2.0
1.4
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/5
2010.01 - Rev.A
SH8J66
Data Sheet
Electrical characteristics (Ta=25C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol
Min.
Typ.
Max.
Gate-source leakage
−
IGSS
Drain-source breakdown voltage V(BR) DSS −30
Zero gate voltage drain current
IDSS
−
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-state
∗
−
RDS (on)
resistance
−
Yfs ∗ 11
Forward transfer admittance
Input capacitance
Ciss
−
Output capacitance
−
Coss
Crss
Reverse transfer capacitance
−
−
Turn-on delay time
td (on) ∗
tr ∗
−
Rise time
Turn-off delay time
−
td (off) ∗
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Gate-source charge
Qgs ∗
−
Gate-drain charge
−
Qgd ∗
−
−
−
−
13.5
17.5
19.0
−
3000
400
400
20
60
170
100
35
9
12
±10
−
−1
−2.5
18.5
23.6
24.7
−
−
−
−
−
−
−
−
−
−
−
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −9A, VGS= −10V
ID= −4.5A, VGS= −4.5V
ID= −4.5A, VGS= −4.0V
VDS= −10V, ID= −9A
VDS= −10V
VGS=0V
f=1MHz
VDD −15V
ID= −4.5A
VGS= −10V
RL=3.3Ω
RG=10Ω
VDD −15V
ID= −9A
VGS= −5V
RL=1.7Ω / RG=10Ω
∗Pulsed
Body diode characteristics (Source-drain) (Ta=25C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −9A, VGS=0V
∗ Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2/5
2010.01 - Rev.A
SH8J66
Data Sheet
Electrical characteristic curves
DRAIN CURRENT : -ID [A]
12
10
8
VGS= -3.5V
VGS= -3.0V
6
4
16
12
10
8
6
2
2
0
0
0.2
0.4
0.6
VGS= -2.5V
4
VGS= -2.5V
0.0
VGS= -10V
VGS= -4.0V
VGS= -3.0V
14
0.8
1.0
0
2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) [mΩ]
VGS= -4.0V
VGS= -4.5V
VGS= -10V
1
8
100
1
0.1
1
10
0.1
FORWARD TRANSFER ADMITTANCE :
|Yfs| [S]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(  V)
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c 2010 ROHM Co., Ltd. All rights reserved.
○
10
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(    )
100
VDS= -10V
Pulsed
10
1
1
DRAIN-CURRENT : -ID [A]
100
DRAIN-CURRENT : -ID [A]
3.0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(   )
1
2.5
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID [A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
2.0
Fig.3 Typical Transfer Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
VGS= -4.0V
Pulsed
0.1
1.5
GATE-SOURCE VOLTAGE : -VGS[V]
1
10
0.1
0.01
1.0
10
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(I)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) [mΩ]
6
VGS= -10V
Pulsed
DRAIN-CURRENT : -ID [A]
100
4
REVERSE DRAIN CURRENT : -Is [A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) [mΩ]
100
1
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
Fig.2 Typical output characteristics(   )
Ta=25°C
Pulsed
0.1
Ta= 125°C
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics(  )
10
10
VGS= -2.2V
DRAIN-SOURCE VOLTAGE : -VDS[V]
100
VDS= -10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) [mΩ]
14
100
Ta=25°C
Pulsed
18
VGS= -10V
VGS= -4.5V
VGS= -4.0V
16
DRAIN CURRENT : -ID [A]
20
Ta=25°C
Pulsed
18
DRAIN CURRENT : -ID [A]
20
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0
0.1
1
DRAIN-CURRENT : -ID [A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/5
10
VGS=0V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE-DRAIN VOLTAGE : -VSD [V]
1.2
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2010.01 - Rev.A
SH8J66
Data Sheet
10000
Ta=25°C
Pulsed
45
td(off)
35
Switching Time : t [ns]
40
ID = -9.0A
30
ID = -4.5A
25
tf
1000
10
Ta=25°C
VDD = -15V
VGS=-10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : -VGS [V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) [mΩ]
50
100
10
20
td(on)
tr
15
1
10
0
5
10
6
4
Ta=25°C
VDD = -15V
ID = -9.0A
R G=10Ω
Pulsed
2
0
0.01
15
8
0.1
1
10
GATE-SOURCE VOLTAGE : -VGS[V]
0
10
20
30
40
50
60
70
TOTAL GATE CHARGE : Qg [nC]
DRAIN-CURRENT : -ID [A]
Fig.11 Switching Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Dynamic Input Characteristics
1000
10000
Operation in this area is limited by RDS(on)
(V GS=-10V)
1000
Crss
Coss
100
100
DRAIN CURRENT : -ID (A)
CAPACITANCE : C [pF]
Ciss
Ta=25°C
f=1MHz
VGS=0V
PW =100us
10
PW = 10ms
1
PW =1ms
0.1
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
10
0.01
0.1
1
10
0.01
0.1
100
1
DC operation
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Maximum Safe Operating Aera
10
RESISTANCE : r (t)
NORMARIZED TRANSIENT THERMAL
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1
0.1
T a = 25°C
Single Pulse : 1Unit
0.01
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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c 2010 ROHM Co., Ltd. All rights reserved.
○
4/5
2010.01 - Rev.A
SH8J66
Data Sheet
Measurement circuits
Pulse Width
VGS
ID
VGS
VDS
10%
50%
90%
RL
D.U.T.
50%
10%
10%
RG
VDD
VDS
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-2 Switching Time Waveforms
Fig.1-1 Switching Time Test Circuit
VG
VGS
ID
VDS
Qg
RL
VGS
IG(Const.)
D.U.T.
Qgs
RG
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Test Circuit
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c 2010 ROHM Co., Ltd. All rights reserved.
○
5/5
2010.01 - Rev.A
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