2.5V Drive Nch MOSFET RTR025N05 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TSMT3 1.0MAX zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source zApplication Switching (3) Drain zPackaging specifications Package Type 0~0.1 (2) (1) Abbreviated symbol : PW zInner circuit Taping (3) TL Code Basic ordering unit (pieces) 3000 RTR025N05 ∗2 (1) ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 45 ±12 ±2.5 ±10 0.8 10 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.A RTR025N05 Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Min. − 45 − 0.5 − − − 2.0 − − − − − − − Typ. − − − − 95 100 125 − 250 60 30 9 15 20 14 Max. ±10 − 1 1.5 130 140 175 − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns ∗ − 3.2 − nC ∗ − 0.9 − nC ∗ − 0.7 − nC RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Gate-source charge Qgs Gate-drain charge Qgd ∗ ∗ ∗ ∗ ∗ Conditions VGS= ±12V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 2.5A, VGS= 4.5V ID= 2.5A, VGS= 4V ID= 2.5A, VGS= 2.5V VDS= 10V, ID= 2.5A VDS= 10V VGS= 0V f=1MHz VDD 25V ID= 1.2A VGS= 4.5V RL 20.8Ω RG=10Ω VDD 25V ID= 2.5A VGS= 4.5V RL 10Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − 1.2 V Conditions IS= 2.5A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.06 - Rev.A RTR025N05 Data Sheet zBody diode characteristics curves V GS= 4.0V VGS= 2.5V 3 VGS= 2.0V 2 10 Ta=25°C Pulsed VGS= 4.5V VGS= 4.0V VGS= 2.5V 4 DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] V GS= 4.5V 4 5 Ta=25°C Pulsed V GS= 10V 3 DRAIN CURRENT : ID [A] 5 VGS= 2.0V 2 VGS= 1.8V 1 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 1 VGS= 1.8V 0.001 0 0.2 0.4 0.6 0.8 1 0 2 1000 Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 VGS= 2.5V VGS= 4.0V VGS= 4.5V 100 10 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10 VGS= 2.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 1.5 2 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 VDS= 10V Pulsed 1 2.5 VGS= 4.0V Pulsed 10 0.01 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 VGS= 4.5V Pulsed DRAIN-CURRENT : ID [A] 1000 1 0.5 GATE-SOURCE VOLTAGE : VGS[V] 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 0 10 Fig.3 Typical Transfer Characteristics DRAIN-CURRENT : ID [A] 10 0.01 8 DRAIN-SOURCE VOLTAGE : VDS[V] 10 0.01 10 6 Fig.2 Typical Output Characteristics(Ⅱ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 4 REVERSE DRAIN CURRENT : Is [A] 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 10 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.06 - Rev.A Data Sheet 1000 Ta=25°C Pulsed 300 ID = 2.5A 250 ID = 1.2A 200 150 100 5 Ta=25°C VDD = 25V VGS=4.5V RG=10Ω Pulsed td(off) tf 100 GATE-SOURCE VOLTAGE : VGS [V] 350 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] RTR025N05 10 50 td(on) tr 0 4 3 2 1 1 0 2 4 6 8 10 0 0.01 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C VDD = 25V ID = 2.5A RG=10Ω Pulsed 0.1 1 0 10 1 2 3 DRAIN-CURRENT : ID [A] TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 4 1000 CAPACITANCE : C [pF] Ciss 100 Crss 10 Ta=25°C f=1MHz VGS=0V 0.01 Coss 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuits VGS ID Pulse Width VDS RL D.U.T. 90% 50% 10% VGS VDS 50% 10% 10% VDD RG 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.2-2 Gate Charge Waveform 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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