10V Drive Nch MOSFET R6012ANJ zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 1.3 (1) (2) (3) Each lead has same dimensions LPTL zApplications Switching 8.9 4.8 zPackaging specifications Taping Package Type Code LPTS TL LPTL TLL Basic ordering unit (pieces) (1) Gate (2) Drain (3) Source zInner circuit Symbol Limits Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ∗3 ±12 A ∗1 ±48 A Drain current Source current (Body Diode) Each lead has same dimensions 1000 zAbsolute maximum ratings (Ta=25°C) Parameter (1) (2) (3) Continuous ID Pulsed IDP Continuous IS Pulsed ISP ∗3 12 A ∗1 48 A 6 A 9.6 mJ Avalanche Current IAS ∗2 Avalanche Energy EAS ∗2 Total power dissipation (Tc=25°C) PD 100 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 1.25 °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.04 - Rev.A Data Sheet R6012ANJ zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 600 − − V ID=1mA, VGS=0V IDSS − − 100 µA VDS=600V, VGS=0V Gate threshold voltage VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) ∗ − 0.32 0.42 Ω ID=6A, VGS=10V Forward transfer admittance | Yfs | 3.5 − − S ID=6A, VDS=10V VDS=25V Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current ∗ Input capacitance Ciss − 1300 − pF Output capacitance Coss − 890 − pF VGS=0V Reverse transfer capacitance Crss − 45 − pF f=1MHz Turn-on delay time td(on) ∗ − 30 − ns ID=6A, VDD 300V ∗ − 30 − ns VGS=10V ∗ − 90 − ns RL=50Ω ∗ − 35 − ns RG=10Ω ∗ − 35 − nC ∗ − 7 − nC ∗ − 15 − nC VDD 300V ID=12A VGS=10V RL=25Ω / RG=10Ω tr Rise time Turn-off delay time td(off) tf Fall time Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.5 Unit V Conditions IS=12A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.04 - Rev.A Data Sheet R6012ANJ zElectrical characteristics curves 10 1 Operation in this area is limited by RDS(ON) 7.0V 6.5V 20 6.0V 10 100 0 1000 GATE THRESHOLD VOLTAGE: VGS(th) (V) DRAIN CURRENT : ID (A) 6 0.1 0.01 2 3 4 5 6 7 5.0V 5 0.6 ID =12A 0.4 ID =6A 0 10 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 40 50 0 1 10 2 1 0 50 100 15 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.4 ID = 6A 0.2 CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 3/5 0.1 1 10 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ID = 12A 100 0.01 DRAIN CURRENT : ID (A) 0.6 50 5 1 100 0 4 VGS= 10V Pulsed 0.01 0.001 150 VGS= 10V Pulsed 0 -50 3 Fig.3: Typical Output Characteristics(Ⅱ) 3 0 -50 2 DRAIN-SOURCE VOLTAGE: VDS (V) 4 0.8 5 30 Fig.5 Gate Threshold Voltage vs. Channel Temperature STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 6.0V CHANNEL TEMPERATURE: Tc h (°C) Ta=25°C Pulsed 0 20 5 Fig.4 Typical Transfer Characteristics 0.2 10 VDS= 10V ID = 1mA GATE-SOURCE VOLTAGE : VGS (V) 0.8 5.5V 6.5V 10 Fig.2: Typical Output Characteristics(Ⅰ) Ta= 75°C Ta= 25°C Ta= -25°C 1 7.0V DRAIN-SOURCE VOLTAGE: VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 Ta= 125°C 0 8.0V 15 VGS= 4.5V VDS= 10V Pulsed 1 10V 0 Fig.1 Maximum Safe Operating Aera 10 VGS= 4.5V 5.0V 0 DRAIN-SOURCE VOLTAGE : VDS ( V ) 100 Ta= 25°C Pulsed DC operation Tc = 25°C Single Pulse 0.01 0.1 PW=1ms 30 10 Ta= 25°C Pulsed 8.0V FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.1 PW =100us 20 10V 9.0V DRAIN CURRENT: ID (A) 40 DRAIN CURRENT: ID (A) DRAIN CURRENT : ID (A) 100 150 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current 2009.04 - Rev.A Data Sheet R6012ANJ 10000 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 15 1000 Crs s 10 Ta= 25°C f= 1MHz VGS= 0V 1 0.01 0 0.5 1 0.1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 0.1 1 10 0 10 20 30 40 50 Ta= 25°C VDD = 300V VGS= 10V R G= 10Ω Pulsed 1000 td(off) 100 10 td(on) tr 1 0.01 100 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current 1 0 Fig.12 Dynamic Input Characteristics REVERSE DRAIN CURRENT : IDR (A) 10 1000 Fig.11 Typical Capacitance vs. Drain-Source Voltage tf 100 100 5 TOTAL GATE CHARGE : Qg (nC) 10000 10 Fig.14 Switching Characteristics Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 53.0 °C/W RESISTANCE : r (t) NORMARIZED TRANSIENT THERMAL 10 Ta= 25°C VDD = 300V ID = 12A RG= 10Ω 10 Pulsed DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1000 Cis s Cos s 100 GATE-SOURCE VOLTAGE : VGS (V) VGS= 0V Pulsed CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 100 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.04 - Rev.A Data Sheet R6012ANJ zMeasurement circuits Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.5 Fig.4 Gate charge waveform Avalanche measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.6 5/5 Avalanche waveform 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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