CEP20A03/CEB20A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Tc = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 30 Units V ±20 V 197 A 124 A 788 A 139 W 1.1 W/ C d EAS 800 mJ Single Pulsed Avalanche Current d IAS 40 A TJ,Tstg -55 to 150 C Symbol Limit Units Single Pulsed Avalanche Energy Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 0.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Jun http://www.cetsemi.com CEP20A03/CEB20A03 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(on) Rg Gate input resistance Dynamic Characteristics VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 30A 1 1.6 2 mΩ VGS = 4.5V, ID = 30A 2 3 mΩ f=1MHz,open Drain 2 Ω 7950 pF 1055 pF 740 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching Characteristics VDS = 15V, VGS = 0V, f = 1.0 MHz c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 15A, VGS = 4.5V, RGEN = 1Ω 41 82 ns 32 64 ns 92 184 ns Turn-Off Fall Time tf 30 60 ns Total Gate Charge Qg 96 125 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 50A, VGS = 4.5V 24 nC 39 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 30A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C 2 115 A 1.2 V CEP20A03/CEB20A03 300 VGS=10,8,6,4V 100 ID, Drain Current (A) ID, Drain Current (A) 125 75 VGS=3V 50 25 0 0 2 4 6 8 1.5 3 4.5 6 7.5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 4500 3000 Coss 1500 Crss 0 3 6 9 12 15 2.2 1.9 ID=30A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 -55 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 60 T =125 C J 0 6000 1.2 120 VDS, Drain-to-Source Voltage (V) 7500 1.3 180 10 9000 0 240 -25 0 25 50 75 100 125 VGS=0V 10 2 10 1 10 0 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 10 VDS=15V ID=50A 3 2 1 0 0 3 RDS(ON)Limit 100ms 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP20A03/CEB20A03 20 40 60 80 10 10ms DC 10 10 100 1ms 2 1 TC=25 C TJ=150 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 Single Pulse 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -5 t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2