CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 S Tc = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 60 Units V ±20 V 135 A 95 A 540 A 167 W 1.1 W/ C Single Pulsed Avalanche Energy d EAS 400 mJ Single Pulsed Avalanche Current d IAS 40 A TJ,Tstg -55 to 175 C Operating and Store Temperature Range Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 0.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Jun http://www.cetsemi.com CEP6036/CEB6036 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 4.6 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Gate input resistance Dynamic Characteristics c VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 30A 3.7 Rg f=1MHz,open Drain 1.9 Ω 6145 pF 450 pF 300 pF Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching Characteristics VDS = 25V, VGS = 0V, f = 1.0 MHz 2 c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 30A, VGS = 10V, RGEN = 3.6Ω 34 68 ns 23 46 ns 82 164 ns Turn-Off Fall Time tf 25 50 ns Total Gate Charge Qg 138 179 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 48V, ID = 30A, VGS = 10V 34 nC 46 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 30A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.5mH, IAS =40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C 2 135 A 1.2 V CEP6036/CEB6036 200 150 120 VGS=6V 90 60 30 0 0 2 4 6 8 10 TJ=125 C 0 2 -55 C 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 3600 2400 Coss 1200 Crss 0 5 10 15 20 25 2.6 2.2 ID=30A VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 50 0 4800 1.2 100 VDS, Drain-to-Source Voltage (V) 6000 1.3 150 VGS=5V 7200 0 25 C VGS=10,9,8,7V ID, Drain Current (A) ID, Drain Current (A) 180 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 175 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=48V ID=30A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP6036/CEB6036 6 4 2 0 0 35 70 105 RDS(ON)Limit 100ms 10 2 1ms 10ms DC 10 10 140 3 1 TC=25 C TJ=175 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 Single Pulse 10 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 -2 10 -5 t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2