CEP03N8/CEB03N8 CEF03N8

CEP03N8/CEB03N8
CEF03N8
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP03N8
800V
4.8Ω
3A
10V
CEB03N8
800V
4.8Ω
3A
10V
CEF03N8
800V
4.8Ω
3A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
Drain Current-Pulsed a
IDM e
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
TO-220F
800
Units
V
±30
V
3
3
d
A
2
2d
A
12
12 d
A
125
47
W
0.3
W/ C
0.8
Single Pulsed Avalanche Energy h
EAS
32
mJ
Single Pulsed Avalanche Current
IAS
3
A
TJ,Tstg
-55 to 175
C
h
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
1.2
3.2
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
62.5
C/W
Rev 2. 2012.July
http://www.cetsemi.com
Details are subject to change without notice .
1
Electrical Characteristics
Parameter
CEP03N8/CEB03N8
CEF03N8
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
800
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 800V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
4.8
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
Static Drain-Source
On-Resistance
RDS(on)
VGS = 10V, ID = 1.5A
3.8
Rg
f=1MHz,open Drain
3.3
Ω
690
pF
70
pF
15
pF
Gate input resistance
Dynamic Characteristics
2
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 450V, ID = 2.2A,
VGS = 10V, RGEN = 25Ω
20
40
ns
34
ns
44
68
88
ns
Turn-Off Fall Time
tf
28
56
ns
Total Gate Charge
Qg
16
20
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 720V, ID = 2.2A,
VGS = 10V
3
nC
7
nC
Drain-Source Diode Characteristics and Maximun Ratings
IS
Drain-Source Diode Forward Current
3
A
VSD
VGS = 0V, IS = 3A
1.2
V
Reverse Recovery Time
Trr
ID = 5A, di/dt = 100A/us
429
ns
Reverse Recovery Charge
Qrr
ID = 5A, di/dt = 100A/us
1.3
nC
Drain-Source Diode Forward Voltage
b
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
h.L = 7mH, IAS =3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
CEP03N8/CEB03N8
CEF03N8
6
2.0
VGS=10,9,8,6V
1.6
1.2
0.8
VGS=5V
0.4
0
0
2
4
6
8
10
TJ=125C
0
25 C
2
-55 C
4
6
8
10
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
450
300
Coss
150
Crss
0
5
10
15
20
25
3.0
2.5
ID=1.5A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
1
VGS, Gate-to-Source Voltage (V)
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
2
12
600
1.2
3
VDS, Drain-to-Source Voltage (V)
750
1.3
4
0
900
0
5
ID, Drain Current (A)
ID, Drain Current (A)
2.4
-25
0
25
50
75
100
125
10
1
10
0
10
-1
VGS=0V
0.4
150
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=720V
ID=2.2A
10
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP03N8/CEB03N8
CEF03N8
6
4
2
0
0
4
8
12
10
RDS(ON)Limit
100ms
1ms
10ms
0
DC
10
10
16
1
-1
TC=25 C
TJ=175 C
Single Pulse
-2
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
0.1
10
-1
PDM
0.05
t1
0.02
0.01
10
Single Pulse
-2
10
-5
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3