2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 zApplications Small signal low frequency amplifier VMN3 0.22 0.16 (3) 0.1 1.0 0.8 0.1 zFeatures 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. zStructure NPN silicon epitaxial planar transistor (1) (2) 0.17 0.35 0.6 (1) Base (2) Emitter (3) Collector 0.37 Abbreviated symbol : N zDimensions (Unit : mm) zAbsolute maximum (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 Collector current Power dissipation Junction temperature Range of storage temperature mA ICP ∗1 200 PD ∗2 150 mW Tj 150 °C Tstg −55 to +150 °C ∗1 Pw=1ms Single pulse ∗2 Each terminal mounted on a recommended land 1/3 2SC6114 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 0.1 µA VCB=50V Collector cutoff current Conditions IEBO − − 0.1 µA VEB=5V VCE(sat) − − 0.3 V IC/IB=25mA/2.5mA hFE 120 − 390 − VCE=6V, IC=2mA Transition frequency fT − 130 − MHz Output capacitance Cob − 1.0 − pF Emitter cutoff current Collector-emitter saturation voltage DC current gain VCE=10V, IE=−1mA, f=100MHz VCE=10V, IE=0A, f=1MHz hFE RANK Rank Q R hFE 120 to 270 180 to 390 zElectrical characterristic curves 1000 VCE= −6V Ta=125˚C 25˚C −40˚C 1 1 10 100 10 0.1 1 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) Ic/Ib=10/1 Ta=125˚C 25˚C −40˚C 1 10 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 100 10 0.1 1 10 100 Fig.3 DC current gain vs. collector current (ΙΙ) Ta=25˚C f=1MHz IE=0A 1 0.01 1 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current (Ι) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 0.01 0.1 10 0.1 100 COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics 1 10 VCE=6V Ta=125˚C 25˚C −40˚C 100 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.5 Collector output capacitance 50 COLLECTOR CURRENT : IC (mA) 0.1 0.1 DC CURRENT GAIN : hFE 10 0.1 1000 Ta=25˚C VCE= 6V 2V DC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic (mA) 100 Ta=25˚C IB=200uA 40 IB=150uA 30 IB=100uA 20 IB=50uA 10 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.6 Typical output characteristics 2/3 2SC6114 Transistors 1 0.1 0.1 Ic/Ib=10/1 Ta=125˚C 25˚C −40˚C 1 10 COLLECTOR CURRENT : IC (mA) Fig.7 Base-emitter saturation voltage vs. collector current 100 1000 TRANSITION FREQUENCY : FT (MHZ) BASE-EMITTER SATURATION VOLTAGE : VBE(sat) (V) 10 Ta=25°C VCE=10V f=100MHz 100 10 0.1 1 10 100 EMITTER CURRENT : IE (mA) Fig.8 Transition frequency 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0