ROHM 2SC4672T100P

2SC4672
Transistors
Low Frequency Transistor (50V, 3A)
2SC4672
zFeatures
1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SA1797.
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
60
50
V
V
Emitter-base voltage
VEBO
6
3
6
V
A (DC)
A (Pulse)
W
Parameter
Collector current
IC
Collector power dissipation
PC
0.5
2
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗2
∗1
°C
°C
∗1 Single pulse, Pw=10ms
∗2 40×40× t 0.7mm Ceramic board
zPackaging specifications and hFE
Type
2SC4672
Package
hFE
MPT3
PQ
DK ∗
Marking
Code
Basic ordering unit (pieces)
T100
1000
∗ Denotes hFE
hFE values are classified as follows:
Item
P
Q
hFE
82 to 180
120 to 270
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCBO
BVCEO
−
−
−
−
−
BVEBO
60
50
6
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
ICBO
−
−
0.1
V
V
V
µA
VCB=60V
IEBO
−
0.1
0.35
µA
V
VEB=5V
DC current transfer ratio
Transition frequency
Output capacitance
VCE(sat)
−
−
−
0.13
hFE1
82
−
270
−
hFE2
45
−
fT
−
−
−
210
25
−
MHz
pF
Cob
−
−
Conditions
IC=50µA
IC=1mA
IE=50µA
∗
IC/IB=1A/50mA
VCE=2V, IC=0.5A
∗
VCE=2V, IC=1.5A
VCE=2V, IE=−0.5A, f=100MHz
∗
VCB=10V, IE=0A, f=1MHz
∗Measured using pulse current.
Rev.C
1/2
2SC4672
Transistors
5000
2000
Ta=25°C
2
1
0.5
0.2
VCE=2V
VCE= −2V
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC(A)
10
5
Ta=100°C
0.1
Ta= −40°C
0.05
0.02
0.01
5m
1000
500
Ta=100°C
Ta=25°C
200
100
50
Ta= −40°C
20
10
2m
1m
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : IC (A)
10
5
Ic Max. (Pulse∗)
5
1m 2m 5m 0.01 0.02 0.05 0.1 0.2
0.5 1
2
5
10
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristics curves
1
IC/IB=20
0.5
Ta=100°C
0.2
Ta=25°C
0.1
0.05
Ta= −40°C
0.02
0.01
1m 2m
5m 0.01 0.02
0.05 0.1 0.2
0.5 1
2
5 10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation
voltage vs. collector current
Pw=1ms∗
Pw=10ms∗
2
1
500m
Pw=100ms∗
200m
DC
100m
50m
20m
10m
5m Ta=25°C
∗ Single
2m
NONREPETITIVE
PULSE
1m
0.1 0.2
0.5 1
2
5 10
20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.4 Safe Operating area
Rev.C
2/2
Appendix
Notes
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Appendix1-Rev2.0