ROHM 2SD1383K-2

2SD1383K
Transistors
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
zDimensions (Unit : mm)
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SB852K.
2SD1383K
zPackaging specifications
Type
2SD1383K
Package
hFE
SMT3
B
Marking
W∗
Code
Basic ordering unit (pieces)
T146
3000
(1)Emitter
(2)Base
Each lead has same dimensions
(3)Collector
∗ Denotes hFE
zCircuit diagram
C
B
RBE
4kΩ
E : Emitter
B : Base
C : Collector
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCES
VEBO
IC
Collector current
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
−55 to +150
Unit
V
∗1
V
V
A (DC)
A (Pulse) ∗2
W
°C
°C
∗1 RBE=0Ω
∗2 Single pulse Pw=10ms
zElectrical characteristics (Ta=25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
Collector-emitter saturation voltage
Transition frequency
Output capacitance
VCE(sat)
fT
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
40
32
6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
250
3
Max.
−
−
−
1
1
−
1.5
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=100µA
IC= −1mA , RBE=0Ω
IE=100µA
VCB=24V
VEB=4.5V
VCE=5V, IC=0.1A
IC=200mA, IB=0.4mA
∗1
VCE=5V, IE= −10mA, f=100MHz ∗2
VCB=10V, IE=0A, f=1MHz
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Rev.C
1/2
2SD1383K
Transistors
zElectrical characteristic curves
500
25
50
20
10
5
0
75
100
125
0
150
0.4
0.8
1.2
1.6
2.0
2.4
2.8
9µA
8µA
7µA
50
6µA
5µA
4µA
BASE TO EMITTER VOLTAGE : VBE (V)
VCE=5V
Ta=25°C
5V
20000
10000
5000
VCE=3V
2000
DC CURRENT GAIN : hFE
50000
1000
100000
00
1
a=
T
50000
°C
°C
25
C
−55°
20000
10000
5000
500
10
20
50 100
200
500 1000 2000
5
COLLECTOR CURRENT : IC (mA)
200
100
50
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
50 100
200
500 1000 2000
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
4
5
IC/IB=500
2
Ta= −55°C
1
0.5
100°C
25°C
0.2
0.1
0.5
1
2
5
100
200
500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Fig.5 DC current gain vs. collector current ( ΙΙ )
OUTPUT CAPACITANCE : Cob (pF)
500
20
3
Fig.3 Ground emitter output characteristics
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
Ta=25°C
VCE=6V
10
3µA
2
1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter propagation characteristisc
Fig.1 Power dissipation curves
5
0
0
3.2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
50
EMITTER INPUT CAPACITANCE : Cib (pF)
25
AMBIENT TEMPERATURE : Ta (°C)
DC CURRENT GAIN : hFE
Ta=25°C
IB=10µA
2
0
0
TRANSISION FREQUWNCY : fT (MHz)
100
COLLECTOR CURRENT : IC (mA)
50
100
Ta= −55°C
75
200
Ta=100°C
100
VCE=6V
Ta=25°C
COLLECTOR CURRENT : IC (mA)
POWER DISSIPATION : PC/PCMax (%)
125
20
Ta=25°C
f=1MHz
IE=0A
10
5
2
1
1
2
5
10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.C
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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Appendix1-Rev2.0