2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K zDimensions (Unit : mm) zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2) High input impedance. SMT3 2.9 1.1 0.4 0.8 (3) 1.6 2.8 zInner circuit (2) (1) 0.95 0.95 0.15 1.9 0.3Min. C (1)Emitter (2)Base B Each lead has same dimensions (3)Collector E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Parameter VCBO VCER VEBO IC PC 30 30 10 0.3 0.2 V V V A W Junction temperature Storage temperature Tj Tstg 150 −55 to +150 °C °C zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCES 30 30 − − − − V V IC=10µA IC=100mA Emitter-base breakdown voltage IE=10µA VCB=30V BVEBO 10 − − V Collector cutoff current ICBO − − 0.1 µA Emitter cutoff current IEBO DC current transfer ratio hFE1 hFE2 − 5000 − − 0.1 − µA − Collector-emitter saturation voltage VCE(sat) 10000 − − − − 1.5 − V Base-emitter voltage Transition frequency Output capacitance VBE(on) fT Cob − − − − 200 5.4 2 − − V MHz pF Conditions VEB=10V VCE/IC=5V/10mA VCE/IC=5V/100mA IC/IB=100mA/0.1mA VCE/IC=5V/100mA VCE=5V , IE=−10mA , f=100MHz VCB=10V , IE=0A , f=1MHz ∗ ∗ Transition frequency of the device. zPackaging specifications and hFE Type 2SD2142K Package hFE SMT3 5k~ T146 3000 Code Basic ordering unit (pieces) Rev.B 1/2 2SD2142K Transistors zElectrical characteristics curves 400 14 12 300 10 8.0 200 6.0 4.0 100 2.0 IB=0µA 0 0 1.0 2.0 80 100k 1.2 40 0.8 20 10k 5k 2k 1k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 4.0 Ta=25°C 20k Ta=−55°C 10k 5k 2k 1k 0.1 0.2 500 1000 COLLECTOR CURRENT : IC (mA) 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.4 1.2 1.0 0.8 0.6 0.4 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Base emitter saturation voltage vs. collector current 1.4 1.2 1.0 0.8 0.6 20 50 100 200 500 1000 Fig.3 Base emitter 'ON' voltage vs. collector current 1.8 Ta=25°C 1.6 IC/IB=1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 50 100 200 20 500 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector emitter saturation voltage vs. collector current 100 Ta=25°C f=1MHz 50 1000 Ta=25°C VCE=5V 500 200 100 50 20 Cib 10 5 Cob 2 20 10 1.0 5.0 10 COLLECTOR CURRENT : IC (mA) CAPACITANCE (pF) 1.6 CURRENT GAIN-BANDWIDTH PRODUCT (MHz) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 1.8 1.6 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 2.2 Ta=25°C IC/IB=1000 2.0 1.8 0.4 1.0 2.0 5.0 100k Ta=25°C VCE=5V 50k DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 5V 3V IB=0µA Ta=25°C 2.0 VCE=5V Fig.2 Typical output characteristics ( ΙΙ ) VCE=10V 20k 0.4 0.2 2.2 COLLECTOR - EMITTER VOLTAGE : VCE (V) Ta=25°C 50k 1.6 60 COLLECTOR - EMITTER VOLTAGE : VCE (V) Fig.1 Typical output characteristics ( Ι ) 1.8 0 0 2.0 2.4 BASE EMITTER VOLTAGE : VBE(on) (V) 100 Ta=25°C 20 18 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) 16 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : Ic (mA) 500 Ta=25°C 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.8 Current gain-bandwidth product vs. collector current 1 0.5 1 2 5 10 20 50 REVERSE BIAS VOLTAGE (V) Fig.9 Capacitance vs. reverse bias voltage Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0