DRAM Component Part Numbering System The part numbering system is available at www.micron.com/numbering DDR4/DDR3/DDR2/DDR/SDRAM, Mobile LPDDR4/LPDDR3/LPDDR2/LPDDR/LPSDR, RLDRAM®, & GDDR5X/GDDR5 Memory MT 42 A 128M16 D1 KL - 25 IT ES :A Micron Technology Die Revision Designator Product Family 40 = DDR4 SDRAM 41 = DDR3 SDRAM 42 = Mobile LPDDR2 44 = RLDRAM 3 46 = DDR SDRAM/Mobile LPDDR 47 = DDR2 SDRAM 48 = SDRAM/Mobile LPSDR 49 = RLDRAM (1 & 2) 51 = GDDR5 52 = Mobile LPDDR3 53 = Mobile LPDDR4 (2x16 ch/die) 58 = GDDR5X Production Status ES = Engineering sample MS = Mechanical sample Blank = Production Voltage A = 1.2V VDD CMOS B = 1.1V VDD CMOS C = 5.0V VCC CMOS G = 3.0V VDD CMOS H = 1.8V VDD CMOS HC = 1.8V VDD CMOS, 1.2V I/O J = 1.5V VDD CMOS K = 1.35V VDD CMOS L = 1.2V VDD CMOS LC = 3.3V VDD CMOS N = 1.0V VDD CMOS R = 1.55V VDD CMOS V = 2.5V VDD CMOS Component Configuration Depth, Width Blank = Bits K = Kilobits M = Megabits G = Gigabits Operating Temperatures Blank = Commercial temperature IT** = Industrial temperature AT = Automotive WT= Wireless temperature XT= Wide temperature UT= Ultra temperature **The number one (1) and the capital letter “I” utilize the same laser mark—“I” Special Options (Multiple processing codes are separated by a space and are listed in hierarchical order) A = Automotive G = Graphics L = Low power M = Reduced standby X = Product Longevity Program (Automotive & Industrial only) Access/Cycle Time DRAM Speed Grade Technology Mark All DRAM -0 -A DRAM Technology DDR4 SDRAM Device Versions Alphanumeric character(s) specified by individual datasheet Mobile devices D1 = Single die (LPDDR2, LPDDR3, LPDDR4) LF = Single die (LPDDR) LG = Single die, reduced page-size addressing (LPDDR) D2 = 2-die stack (LPDDR2, LPDDR3, LPDDR4) L2 = 2-die stack (LPDDR) D4 = 4-die stack (LPDDR2, LPDDR3, LPDDR4) L4 = 4-die stack (LPDDR) D6 = 6-die stack (LPDDR3) RLDRAM only Blank = Common I/O C = Separate I/O DRAM Package Codes Codes range from 1-3 characters depending on the product. Please refer to the datasheet for package details. DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM Mobile LPDDR4 Mobile LPDDR3 Mobile LPDDR2 Mobile LPDDR Mobile LPSDR RLDRAM 1&2 RLDRAM 3 Speed Grade Mark -093E -093H -083 -083E -083H -075 -075E -075H -068 -068E -062E -062H -15E -125 -125E -107 -093 -3 -25 -25E -187E -75 -6T -5B -75 -7E -6A -5 -046 -053 -062 -075 -093 -125 -125 -18 -375 -15 -125 -18 -25 -3 -37 -5 -75 -6 -54 -5 -48 -8 -75 -6 -5 -33 -25 -25E -18 -125 -125E -107 -107E -093 -093E t RAC Access Time Untested Untested MAX Clock Frequency 1067 MHz 1067 MHz 1200 MHz 1200 MHz 1200 MHz 1333 MHz 1333 MHz 1333 MHz 1467 MHz 1467 MHz 1600 MHz 1600 MHz 667 MHz 800 MHz 800 MHz 933 MHz 1067 MHz 333 MHz 400 MHz 400 MHz 533 MHz 133 MHz 167 MHz 200 MHz 133 MHz 133 MHz 167 MHz 200 MHz 2133 MHz 1866 MHz 1600 MHz 1333 MHz 1066 MHz 800 MHz 800 MHz 533 MHz 266 MHz 667 MHz 800 MHz 533 MHz 400 MHz 333 MHz 266 MHz 200 MHz 133 MHz 167 MHz 185 MHz 200 MHz 208 MHz 125 MHz 133 MHz 167 MHz 200 MHz 300 MHz t 400 MHz with RC 20ns t 400 MHz with RC 15ns 533 MHz t 800 MHz with RC (MIN) 12ns 800 MHz with tRC (MIN) 10ns 933 MHz with tRC (MIN) 10ns 933 MHz with tRC (MIN) 8ns 1067 MHz with tRC (MIN) 10ns 1067 MHz with tRC (MIN) 8ns GDDR5 -50 -60 -70 -80 1.25 GHz 1.5 GHz 1.75 GHz 2.0 GHz -100 -120 -140 1.25 GHz 1.5 GHz 1.75 GHz GDDR5X Rev 18 Rev. 18-Jun-2015 Jun 2015 © 2015 Micron Technology, Inc. Micron, the Micron logo, and RLDRAM are trademarks of Micron Technology, Inc. Products and specifications are subject to change without notice. Dates are estimates only. PC Targets CL-tRCD-tRP 15-15-15 18-15-15 17-17-17 16-16-16 20-18-18 19-19-19 18-18-18 22-19-19 21-21-21 20-20-20 22-22-22 26-22-22 9-9-9 11-11-11 10-10-10 13-13-13 14-14-14 5-5-5 6-6-6 5-5-5 7-7-7 2.5-3-3 2.5-3-3 3-3-3 3-3-3 2-2-2 3-3-3 3-3-3 10-10-10 12-12-12 Data Rate 5 Gb/s 6 Gb/s 7 Gb/s 8 Gb/s Data Rate 10 Gb/s 12 Gb/s 14 Gb/s